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R2005240 [PDI]

Si Reverse, 5 - 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC; 思反向， 5 - 200MHz的， 24.6分贝典型。增益@ 200MHz的， 235A最大。 @ 24VDC
R2005240
元器件型号： R2005240
生产厂家： PREMIER DEVICES, INC.    PREMIER DEVICES, INC.
描述和应用：

Si Reverse, 5 - 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC
思反向， 5 - 200MHz的， 24.6分贝典型。增益@ 200MHz的， 235A最大。 @ 24VDC

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PDF文件： 总4页 (文件大小：64K)
下载文档：  下载PDF数据表文档文件
型号参数：R2005240参数
 查看货源

R2005240P12

 GaAs Reverse, 5 - 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC

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32 PDI

R2005280L

 Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC

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50 PDI

R2005300L

 Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC

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30 PDI

R2005350L

 Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC

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44 PDI

R200A

 Optoelectronic

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67 ETC

R200B

 Optoelectronic

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15 ETC

R200CH12C2H5

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12C2H5

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12CE5

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12CE5

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12D2H9

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12D2H9

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12DE8

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 960V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12DW9

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12DW9

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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0 IXYS
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