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R2005300L [PDI]

Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC; 思反向，低电流， 5 - 200MHz的， 30.0分贝典型。获得@ 200MHz的， 140毫安最大。 @ 24VDC
R2005300L
元器件型号： R2005300L
生产厂家： PREMIER DEVICES, INC.    PREMIER DEVICES, INC.
描述和应用：

Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC
思反向，低电流， 5 - 200MHz的， 30.0分贝典型。获得@ 200MHz的， 140毫安最大。 @ 24VDC

射频 微波 高功率电源
PDF文件： 总4页 (文件大小：129K)
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型号参数：R2005300L参数
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R2005350L

 Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC

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R200CH12C2H5

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R200CH12CE5

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12D2H9

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12D2H9

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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R200CH12DE8

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 960V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12DW9

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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R200CH12DW9

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200AC

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R200CH12E2H3

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 360V V(RRM), 1 Element, TO-200AC

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0 IXYS

R200CH12E2H3

 Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 360V V(RRM), 1 Element, TO-200AC

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0 IXYS
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