SB845F [PANJIT]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 表面贴装肖特基整流器
| 型号： | SB845F |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB820F SERIES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
CURRENT
VOLTAGE
20 to 60 Volts
8 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
0.189(4.8)
0.165(4.2)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
0.130(3.3)
0.114(2.9)
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
0.114(2.9)
0.098(2.5)
0.055(1.4)
0.039(1.0)
MECHANICAL DATA
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
• Case: ITO-220AC full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
0.027(0.67)
0.022(0.57)
0.100(2.55)
0.100(2.55)
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL SB820F SB830F SB840F SB845F SB850F SB860F UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
20
14
20
30
21
30
40
28
40
45
31.5
45
50
35
50
60
42
60
V
V
V
A
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at
Tc =75OC
IF(AV)
8
Peak Forward Surge Current : 8.3 ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
VF
IR
150
A
V
Maximum Forward Voltage at 8.0A
0.55
0.75
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TJ=25OC
0.2
50
mA
TJ=100OC
Typical Thermal Resistance
RJC
3
OC / W
OC
Operating Junction Temperature Range
Storage Temperature Range
TJ
-55 to +125
-55 to +150
TSTG
-55 to +150
OC
NOTE:
Both Bonding and Chip structure are available.
PAGE . 1
August 23,2010-REV.03
SB820F SERIES
RATING AND CHARACTERISTIC CURVES
150
120
110
90
10
20-30V
40-60V
8.3ms Single
Half Since-Wave
JEDEC Method
8
6
4
2
0
70
50
30
20
0
50
150
100
10
1
2
5
10
20
50
100
CASE TEMPERATURE, OC
NO. OF CYCLE AT 60Hz
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
10
40
20V~45V
50~60V
TJ=100OC
10
8
1.0
6
4
TJ=75OC
2
0.1
1.0
0.8
0.6
0.4
TJ=25OC
1% Duty Cycle
Pulse Width=300ms
0.01
0.2
TJ
=25OC
0.1
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.001
0
20
40
60
80
100
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.3- TYPICAL REVERSE CHARACTERISTIC
PAGE . 2
August 23,2010-REV.03
相关型号：
SB845F-LF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 45V V(RRM), Silicon, TO-220, ROHS COMPLIANT, PLASTIC, ITO-220A, 2 PIN
WTE
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