ER1000FCT_10 [PANJIT]
SUPERFAST RECOVERY RECTIFIERS; 超快恢复整流二极管
| 型号： | ER1000FCT_10 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SUPERFAST RECOVERY RECTIFIERS |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ER1000FCT~ER1006FCT
SUPERFAST RECOVERY RECTIFIERS
50 to 600 Volts
10 Amperes
VOLTAGE
FEATURES
CURRENT
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: ITO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
.027(.67)
.022(.57)
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
ER1000FCT ER1001FCT ER1001AFCT ER1002FCT ER1003FCT ER1004FCT ER1006FCT
PARAMETER
SYMBOL
VRRM
UNITS
V
Maximum Recurrent Peak Reverse Voltage
50
35
50
100
70
150
105
150
200
140
200
10.0
150
300
210
300
400
280
400
600
420
600
Maximum RMS Voltage
VRMS
VDC
IF(AV)
IFSM
VF
V
V
Maximum DC Blocking Voltage
100
Maximum Average Forward Current at Tc =100O
C
A
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
A
Maximum Forward Voltage at 5A, per element
0.95
1.30
1.7
V
Maximum DC Reverse Current at TJ=25O
Rated DC Blocking VoltageTJ=100O
C
1.0
500
IR
μA
ns
pF
C
Maximum Reverse Recovery Time (Note 2)
Typical Junction capacitance (Note 1)
Typical Thermal Resistance
trr
35
50
CJ
62
3.0
OC
W
/
RθJC
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to +150
OC
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
May 5,2010-REV.02
PAGE . 1
ER1000FCT~ER1006FCT
RATING AND CHARACTERISTIC CURVES
10
8
150
125
8.3ms Single
Half Since-Wave
JEDEC Method
6
100
75
4
LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
50
25
2
0
0
20
40
60
80
100 120 140 160
0
1
2
5
10
20
50
100
CASE TEMPERAURE, O
C
NO. OF CYCLE AT 60HZ
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
40
10
300-400V
10
TJ = 125°C
200V
Per Diode
1
600V
TJ = 75°C
1
T = 25°C
J
0.1
TJ
=25OC
Pulse Width=200us
20
30
40
50
60
70
80
90
100
.1
.6
PERCENT OF RATED PEAK REVERSE
VOLTAGE, (%)
.8
1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE ,VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.3- TYPICAL REVERSE CHARACTERISTIC
May 5,2010-REV.02
PAGE . 2
相关型号：
ER1001-G
Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC, TO-220A, 2 PIN
SENSITRON
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