ER1000F_04 [PANJIT]
ISOLATION SUPERFAST RECOVERY RECTIFIERS; 隔离超快恢复整流二极管
| 型号： | ER1000F_04 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | ISOLATION SUPERFAST RECOVERY RECTIFIERS |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
ER1000F~ER1004F
ISOLATION SUPERFAST RECOVERY RECTIFIERS
Unit : inch (mm)
ITO-220AC
50 to 400 Volts
VOLTAGE
FEATURES
CURRENT 10 Amperes
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
Flame Retardant Epoxy Molding Compound.
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
•
Super fast recovery times, high voltage.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Pb free: 98.5% Sn above
.055(1.4)
.039(1.0)
.032(.8)
MAX
MECHANICALDATA
.035(0.9)
.011(0.3)
Case: ITO-220AC Molded plastic
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
.1
(2.55)
.1
(2.55)
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
MAXIMUMRATINGANDELECTRICALCHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL ER1000F
ER1001F ER1001AF ER1002F ER1003F ER1004F
UNITS
V
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Maximum RMS Voltage
V
Maximum DC Blocking Voltage
V
DC
100
V
A
Maximum Average Forward Current .375"(9.5mm)
I
AV
10.0
150
lead length at Tc =100O
C
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
I
FSM
A
Maximum Forward Voltage at 10A, per element
V
F
0.95
1.30
V
Maximum DC Reverse Current at TA=25O
Rated DC Blocking VoltageTA=100O
C
10
500
I
R
uA
C
Maximum Reverse Recovery Time (Note 2)
Typical Junction capacitance (Note 1)
Maximum Thermal Resistance
T
RR
35
50
ns
C
J
62
pF
RθJC
3.0
O C / W
Operating Junction and Storage Temperature Range
T
J
,TSTG
-50 TO +150
O C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
PAGE . 1
STAD-APR.19.2004
RATING AND CHARACTERISTIC CURVES
10
8
150
125
8.3ms Single
Half Since-Wave
JEDEC Method
6
100
75
4
.375"9.5mm LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
50
25
2
0
0
20
40
60
80
100 120 140 160
0
1
2
5
10
20
50
100
CASE TEMPERAURE, OC
NO. OF CYCLE AT 60HZ
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
103
102
40
20
50-200V
TJ
=125OC
10
8
300-400V
6
4
101
2
100
10-1
10-2
1.0
.8
.6
.4
TJ C
=25O
.2
.1
TA
=25OC
20
40
60
80
100
120
.6
.7
.8
.9
1.0
1.1 1.2 1.3
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FORWARD VOLATGE, VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.3- TYPICAL REVERSE CHARACTERISTIC
PAGE . 2
STAD-APR.19.2004
相关型号：
ER1001-G
Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC, TO-220A, 2 PIN
SENSITRON
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