BAV21 [PANJIT]
SWITCHING DIODES; 开关二极管
| 型号： | BAV21 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SWITCHING DIODES |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV19~BAV21
SWITCHING DIODES
VOLTAGE
POWER
120~250 Volts
500 mWatts
FEATURES
• Fast switching Speed.
• Electrically ldentical to Standerd JEDEC
• High Conductance
• Axial lead Package ldeally Suited for Automatic lnsertion.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
PARAMETER
SYMBOL
VR
BAV19
100
BAV20
150
BAV21
200
UNITS
Reverse Voltage
V
V
Peak Reverse Voltage
VR M
120
200
250
Rectified Current (Average), Half Wave Rectification with Resistive
Load andf>=50Hz
IF ( A V )
200
mA
Peak Forward Surge Current,1.0s
IF S M
Pt o t
1.0
A
Power Dissipation Derate Above 25O
Maximum Forward Voltage at 0.1A
C
500
mW
VF
IR
1.0
0.1
V
Maximum DC Reverse Current at Rated DC Blocking Voltage TJ =25O
C
µA
Typical Junction Capacitance( Notes1)
Maximum Reverse Recovery (Notes2)
Typical Thermal Resistance
CJ
tr r
3.0
50
pF
ns
Rθ J A
350
O C / W
O C
Operating Junction and Storage Temperature Range
TJ , TS T G
-55 to +150
NOTE:
1. CJ at VR=0, f=1MHZ
2. From IF=30mA to IR=-3mA, VR=6Volts, RL=100Ω
STAD-FEB.06.2009
1
PAGE . 1
BAV19~BAV21
RATING AND CHARACTERISTIC CURVES
A
102
I
v=tp / T T=1/fp
I
FRM
tp
I
FRM
t
T
101
V=0
V=0.1
V=0.2
V=0.3
100
10-1
10-5
10-4
10-3
10-2
10-1
100
101
S
tp
Fig.1 ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
104
T
J
=25OC
f=1KHz
100
103
10
102
-25O
C
25O
C
1.0
0.2
101
75O
C
TA C
=125O
100
10-2
0
.4
.8
1.2
1.6
10-1
100
101
102
FORWARD VOLTAGE, VOLTS
FORWARD CURRENT, mA
Fig.2-DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
Fig.2 FORWARD CHARACTERISTICS
3.5
T
J
=25OC
f=1KHz
500
2.8
2.1
300
100
1.4
0.7
0
100
200
0
2
4
6
8
1.0
AMBIENT TEMPERATURE,OC
REVERSE VOLTAGE, VOLTS
Fig.4 DERATING CURVE
Fig.5 TYPICAL JUNCTION CAPACITANCE
STAD-FEB.06.2009
1
PAGE . 2
相关型号：
BAV21-AP
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
MCC
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