BAV199 [PANJIT]

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES; 表面贴装,低漏电开关二极管
BAV199
型号: BAV199
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
表面贴装,低漏电开关二极管

二极管 开关
文件: 总3页 (文件大小:134K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS116/BAW156/BAV170/BAV199  
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES  
POWER  
250mWatts  
100 Volts  
VOLTAGE  
FEATURES  
• Suface mount package ideally suited for automatic insertion.  
• Very low leakage current. 2pA typical at VR=75V.  
• Low capacitance. 2pF max at VR=0V, f=1MHz  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: SOT-23 plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx weight: 0.008 gram  
• Marking: BAS116: PA,BAW156:P4,BAV170:P3,BAV199:PB  
ABSOLUTE RATINGS (each diode)  
PA RA ME TE R  
S ymb o l  
Va lue  
7 5  
Uni ts  
V
Re ve rs e Vo lta g e  
V R  
P e a k Re ve rs e Vo lta g e  
V
I
RM  
F
1 0 0  
0 .2  
4 .0  
V
A
A
C o nti nuo us F o rwa rd C urre nt  
No n-re p e ti ti ve P e a k F o rwa rd S urg e C urre nt a t t=1 .0 us  
I F S M  
THERMALCHARACTERISTICS  
PA RA ME TE R  
S ymb o l  
Va lue  
2 5 0  
Uni ts  
mW  
P o we r D i s s i p a ti o n (No te 1 )  
P TOT  
The rma l Re s i s ta nc e , J unc ti o n to A mb i e nt (No te 1 )  
J unc ti o n Te mp e ra ture  
RθJ A  
5 0 0  
O C /W  
O C  
T
J
-5 5 to 1 5 0  
-5 5 to 1 5 0  
S to ra g e Te mp e ra ture  
T
S TG  
O C  
NOTE:  
SERIES  
COMMON CATHODE  
COMMON ANODE  
SINGLE  
1. FR-4 Board = 70 x 60 x 1mm.  
BAS116  
BAW156  
BAV170  
BAV199  
STAD-DEC.07.2007  
PAGE . 1  
BAS116/BAW156/BAV170/BAV199  
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)  
PA RA ME TE R  
S ymb o l  
Te s t C o nd i ti o n  
IR=1 0 0 uA  
MIN.  
7 5  
TYP.  
MA X .  
Uni ts  
V
Re ve rs e B re a k d o wn Vo lta g e  
V
(B R)  
V
V
R
R
=7 5 V  
=7 5 V,T  
0 .0 0 2  
8 .0  
5
8 0  
Re ve rs e C urre nt  
F o rwa rd Vo lta g e  
I
R
F
nA  
V
J
=1 5 0 O C  
I
I
I
I
F
F
F
F
=1 mA  
0 .9  
1 .0  
1 .1  
1 .2 5  
=1 0 mA  
=5 0 mA  
=1 5 0 mA  
V
To ta l C a p a c i ta nc e  
C J  
trr  
V
R
=0 V, f=1 MH  
Z
2 .0  
3 .0  
p F  
us  
Re ve rs e Re c o ve ry Ti me  
I
F
=IR=1 0 mA , R  
L
=1 0 0  
CHARACTERISTIC CURVES (each diode)  
1000  
100  
10  
10  
1.0  
TA C  
=-25O  
0.1  
VR=75V  
TA C  
=75O  
1.0  
0.1  
0.01  
TA C  
=25O  
T
A
=125O  
C
0.001  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
50  
100  
150  
200  
V
F, Forward Voltage (V)  
Tj, Junction Temperature (Deg C)  
Fig. 1-Reverse Leakage vs. Junction Temperature  
Fig. 2-Forward Current vs. Forward Voltage  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
0
20  
40  
60  
80  
100  
VR, Reverse Voltage (V)  
Fig. 3- Total capacitance vs. Reverse Voltage  
STAD-DEC.07.2007  
PAGE . 2  
BAS116/BAW156/BAV170/BAV199  
MOUNTING PAD LAYOUT  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 3K per 7” plastic Reel  
LEGAL STATEMENT  
Copyright PanJit International, Inc 2009  
The information presented in this document is believed to be accurate and reliable. The specifications and information herein  
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit  
does not convey any license under its patent rights or rights of others.  
STAD-DEC.07.2007  
PAGE . 3  

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