BAV199-7-F [DIODES]
DUAL SURFACE MOUNT LOW LEAKAGE DIODE; 双表面安装低漏电二极管
| 型号： | BAV199-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL SURFACE MOUNT LOW LEAKAGE DIODE |
| 文件： | 总3页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
Unit: inch (mm)
SOT- 23
250mWatts
POWER
100 Volts
VOLTAGE
FEATURES
• Suface mount package ideally suited for automatic insertion.
• Very low leakage current. 2pA typical at VR=75V.
• Low capacitance. 2pF max at VR=0V, f=1MHz
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
.119(3.00)
.110(2.80)
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
MECHANICALDATA
• Case: SOT-23 plastic
.006(.15)MAX
• Terminals: Solderable per MIL-STD-202G, Method 208
• Approx weight: 0.008 gram
.020(.50)
.013(.35)
• Marking: BAS116: P1,BAW156:P4,BAV170:P3,BAV199:P2
ABSOLUTE RATINGS (each diode)
P A R A M E TE R
S ym bol
V alue
U nits
V
R everse V oltage
V
R
75
100
0.2
2.0
P eak R everse V oltage
V
R M
V
A
A
C ontinuous F orw ard C urrent
I F
N on-repetitive P eak F orw ard S urge C urrent at t=1.0us
I F S M
THERMALCHARACTERISTICS
P A R A M E TE R
S ym bol
V alue
250
U nits
m W
P ow er D issipation (N ote 1)
P TO T
Therm al R esistance, Junction to A m bient (N ote 1)
Junction Tem perature
R θJA
500
O C /W
O C
T
J
-55 to 150
-55 to 150
S torage Tem perature
T
S TG
O C
SERIES
COMMON CATHODE
SINGLE
COMMON ANODE
3
NOTE:
3
3
3
1. FR-5 Board = 1.0 x 0.75 x 0.062 in.
1
2
1
2
2
1
2
1
BAV199
BAV170
BAS116
BAW156
STAD-NOV.15.2004
PAGE . 1
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
P A R A M E TE R
S ym bol
Test C ondition
IR =100 uA
M IN .
75
TYP.
M A X .
U nits
V
R everse B reakdow n V oltage
V
(B R )
V
V
R
R
=75 V
=75 V ,T
0.002
8.0
5
80
R everse C urrent
F orw ard V oltage
I
R
F
T
nA
V
J
=150 O C
IF
IF
IF
IF
=1m A
0.9
1.0
1.1
=10m A
=50m A
=150m A
V
C
1.25
Total C apacitance
V
R
=0 V , f=1M H
Z
2.0
3.0
pF
us
R everse R ecovery Tim e
T
R R
IF
=I
R
=10m A , R
L
=100Ω
CHARACTERISTIC CURVES (each diode)
1000
100
10
10
1.0
TA C
=-25O
0.1
VR=75V
TA C
=75O
1.0
0.1
0.01
TA C
=25O
T
A
=125O
C
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
150
200
V
F, Forward Voltage (V)
Tj, Junction Temperature (Deg C)
Fig. 1-Reverse Leakage vs. Junction Temperature
Fig. 2-Forward Current vs. Forward Voltage
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
VR, Reverse Voltage (V)
Fig. 3- Total capacitance vs. Reverse Voltage
STAD-NOV.15.2004
PAGE . 2
MOUNTING PAD LAYOUT
Unit: inch (mm)
SOT-23
0.037(0.95)
0.031(0.8)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3.0K per 7" plastic Reel
LEGALSTATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-NOV.15.2004
PAGE . 3
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