BAV170W_16 [PANJIT]

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE;
BAV170W_16
型号: BAV170W_16
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE

开关
文件: 总5页 (文件大小:159K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV170W/BAV199W  
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE  
POWER  
200mWatt  
100 Volt  
VOLTAGE  
FEATURES  
• Suface mount package ideally suited for automatic insertion.  
• Very low leakage current. 2pA typical at VR=75V.  
• Low capacitance. 4pF max at VR=0V, f=1MHz  
• Lead free in compliance with EU RoHS 2011/65/EU directive  
• Green molding compound as per IEC61249 Std. . (Halogen Free)  
MECHANICAL DATA  
• Case : SOT-323 plastic  
Terminals : Solderable per MIL-STD-750, Method 2026  
• Approx weight : 0.00018 ounces, 0.005 grams  
• Marking : BAV170W : P3  
BAV199W : PB  
ABSOLUTE RATINGS (each diode)  
P a ra meter  
S ymb ol  
Value  
7 5  
Uni ts  
V
Re ve rse Volta ge  
V R  
P e ak Reve rse Vo lta g e  
V
I
RM  
F
1 00  
0 .2  
4
V
A
A
C onti nuo us Fo rwa rd C urre nt  
No n-rep e ti ti ve P ea k Fo rward S urg e C urrent at t=1 μs  
I F S M  
THERMALCHARACTERISTICS  
P ara me te r  
S ymb ol  
Value  
2 00  
Uni ts  
mW  
P o wer D i ssi p a ti o n (No te 1 )  
P TOT  
Therma l Re si sta nce , Juncti on to A mbi ent (Note 1)  
Juncti o n Te mp era ture  
RθJA  
6 25  
OC /W  
OC  
T
J
-55 to 1 50  
-55 to 1 50  
S tora g e Temp e rature  
T
S TG  
OC  
COMMON CATHODE  
SERIES  
NOTE :  
1. FR-4 Board = 70 x 60 x 1mm.  
FIG.16(TOP VIEW)  
FIG.17(TOP VIEW)  
September 8,2015-REV.00  
PAGE . 1  
BAV170W/BAV199W  
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)  
P arameter  
S ymbol  
Test C ondi ti on  
IR=100 A  
Mi n.  
75  
Typ.  
-
Max.  
-
Uni ts  
V
Reverse B reakdown Voltage  
V
(BR)  
V
V
R
R
=75V  
=75V,T  
-
-
0.002  
8
5
80  
Reverse C urrent  
F orward Voltage  
I
R
F
T
nA  
V
J
=150oC  
I
I
I
I
F
F
F
F
=1mA  
-
-
-
-
-
-
-
-
0.9  
1
1.1  
1.25  
=10mA  
=50mA  
=150mA  
V
Total C apaci tance  
C
V
R
=0V, f=1MH  
Z
L
-
-
-
-
2
3
pF  
Reverse R ecovery Ti me  
T
RR  
I
F
=I  
R
=10mA , R  
=100  
s  
CHARACTERISTIC CURVES (each diode)  
1000  
100  
10  
10  
1.0  
TA C  
=-25O  
0.1  
VR=75V  
TA C  
=75O  
1.0  
0.1  
0.01  
TA C  
=25O  
T
A
=125O  
C
0.001  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
50  
100  
150  
200  
V
F, Forward Voltage (V)  
Tj, Junction Temperature (Deg C)  
Fig. 1-Reverse Leakage vs. Junction Temperature  
Fig. 2-Forward Current vs. Forward Voltage  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
0
20  
40  
60  
80  
100  
VR, Reverse Voltage (V)  
Fig. 3- Total capacitance vs. Reverse Voltage  
September 8,2015­REV.00  
PAGE . 2  
BAV170W/BAV199W  
MOUNTING PAD LAYOUT  
0.026  
(0.66)  
0.026  
(0.65)  
0.026  
(0.65)  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 3K per 7" plastic Reel  
September 8,2015-REV.00  
PAGE . 3  
BAV170W/BAV199W  
Part No_packing code_Version  
BAV170W_R1_00001  
BAV170W_R2_00001  
For example :  
RB500V-40_R2_00001  
Serial number  
Part No.  
Version code means HF  
Packing size code means 13"  
Packing type means T/R  
Packing Code XX  
Version Code XXXXX  
Packing type  
1st Code  
Packing size code  
2nd Code HF or RoHS 1st Code 2nd~5th Code  
Tape and Ammunition Box  
(T/B)  
A
R
B
T
S
L
F
N/A  
7"  
0
1
HF  
0
1
serial number  
serial number  
Tape and Reel  
(T/R)  
RoHS  
Bulk Packing  
(B/P)  
13"  
2
Tube Packing  
(T/P)  
26mm  
52mm  
X
Y
U
D
Tape and Reel (Right Oriented)  
(TRR)  
Tape and Reel (Left Oriented)  
(TRL)  
PANASERT T/B CATHODE UP  
(PBCU)  
PANASERT T/B CATHODE DOWN  
(PBCD)  
FORMING  
September 8,2015-REV.00  
PAGE . 4  
BAV170W/BAV199W  
Disclaimer  
Reproducing and modifying information of the document is prohibited without permission  
from Panjit International Inc..  
Panjit International Inc. reserves the rights to make changes of the content herein the  
document anytime without notification. Please refer to our website for the latest  
document.  
Panjit International Inc. disclaims any and all liability arising out of the application or use of  
any product including damages incidentally and consequentially occurred.  
Panjit International Inc. does not assume any and all implied warranties, including warranties  
of fitness for particular purpose, non-infringement and merchantability.  
Applications shown on the herein document are examples of standard use and operation.  
Customers are responsible in comprehending the suitable use in particular applications.  
Panjit International Inc. makes no representation or warranty that such applications will be  
suitable for the specified use without further testing or modification.  
The products shown herein are not designed and authorized for equipments requiring high  
level of reliability or relating to human life and for any applications concerning life-saving  
or life-sustaining, such as medical instruments, transportation equipment, aerospace  
machinery et cetera. Customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages  
resulting from such improper use or sale.  
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking  
when complaining.  
September 8,2015-REV.00  
PAGE . 5  

相关型号:

BAV170W_R1_00001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE
PANJIT

BAV170W_R2_00001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE
PANJIT

BAV170_03

Low-leakage double diode
DIODES

BAV170_07

Silicon Low Leakage Diode Array
INFINEON

BAV170_0805

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV170_1

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV170_13

250mW Low Leakage Diode 85 Volts
MCC

BAV170_15

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV170_18

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV17R

Rectifier Diode, 1 Element, 0.2A, 25V V(RRM), Silicon,
MICROSEMI

BAV17X

Rectifier Diode, 1 Element, 0.2A, 25V V(RRM), Silicon,
MICROSEMI

BAV17_12

Small Signal Switching Diodes, High Voltage
VISHAY