MIP803 [PANASONIC]
Silicon MOS IC; 硅MOS IC
| 型号： | MIP803 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon MOS IC |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Intelligent Power Devices (IPDs)
MIP803, MIP804
Silicon MOS IC
■ Features
● Allowing downsizing of the sets through the reduction of a parts
count resulting from the voltage step-up utilizing a coil instead of
a transformer and employing the thin surface mounting package.
● Allowing low voltage drive (adaptable to a small and low-voltage
battery), or VCC = 3V or 1.5V drive
unit: mm
10
6
1
5
●
Allowing to adjust the EL light brightness responding to changes in
oscillation frequency which can be changed by the external resistor.
2 to 12˚
6.3±0.2
4.3±0.2
■ Applications
● EL drive
■ Recommended Set
● Watches, pagers, portable CD players, cellular phones, MD play-
2 to 6˚
ers, display panels of remote controllers, and etc.
■ Absolute Maximum Ratings (Ta = 25°C)
1: GND 6: VCP
2: GND 7: VCC
Parameter
Power supply voltage
Input voltage (ENB)
Output voltage (CIL)
Output voltage (ELD)
Output current (CIL)
Output current (ELD)
Allowable power dissipation
Symbol
Ratings
− 0.5 to 4
− 0.5 to VCC + 0.5
− 0.5 to 220
− 0.5 to 220
60
Unit
V
3: CIL
8: ENB
VCC
4: GND 9: RT1
5: ELD 10: RT2
SSONF-10D Package
VENB
VCIL
VELD
ICIL
V
V
V
mA
mA
mW
°C
°C
°C
IELD
120
PD
150
Operating ambient temperature Topr
−20 to +70
−20 to +125
−55 to +125
Channel temperature
Storage temperature
Tch
Tstg
■ Block Diagram
E L
CIL
ELD
3
5
VCC
7
TR1
TR2
+
-
GND
GND
GND
4
Step-up circuit
VCP
2
1
6
8
Logic circuit
Oscillation
circuit
ENB
9
10
RT2
RT1
1
Intelligent Power Devices (IPDs)
MIP803, MIP804
■ Electrical Characteristics (VCC = 2.5V/1.2V, VENB = 2.5V/1.2V, GND = 0, TC = 25 ± 2°C)
Parameter
Symbol
Conditions
min
1.5
0.9
119
195
−7
typ
max
3.5
3.5
161
265
7
Unit
MIP803
MIP804
MIP803
MIP804
MIP803
MIP804
MIP803
MIP804
MIP803
MIP804
2.5
Supply voltage
VCC
V
RT = 390kΩ
RT = 240kΩ
RT = 390kΩ
RT = 240kΩ
140
230
Output frequency
fOSC
kHz
%
Change of output
frequency
Note)
∆fv
−15
1
15
High level input
voltage (ENB)
Low level input
voltage (ENB)
VCC = 1.5 to 3.5V
VCC = 0.9 to 3.3V
VCC = 1.5 to 3.5V
VCC = 0.9 to 3.3V
IOFF(TR1) = 0.1mA
VIH
V
0.8
0.3
0.1
VIL
V
V
Breakdown voltage
VDSS
200
70
Saturation
MIP803
MIP804
MIP803
MIP804
IDS
VDS(TR1) = 20V
IDS(TR1) = 10mA
mA
Output current
60
(TR1
)
ON-state
resistance
6.5
10
15
2
RON
Ω
Off-leakage current
Breakdown voltage
IOFF
VDS(TR1) = 160V
IOFF(TR2) = 0.1mA
µA
VDSS
200
15
V
Saturation
Output current
MIP803
IDS
VDS(TR2) = 20V
IDS(TR2) = 10mA
mA
MIP804
MIP803
MIP804
10
(TR2
)
ON-state
resistance
0.5
0.7
0.75
1
1
1.4
2
RON
IOFF
VCP
kΩ
µA
V
Off-leakage current
Clime power the inside MIP803
voltage MIP804
Statically consumption MIP803
VDS(TR2) = 160V
VCC = VENB = 1.5V, CCP = 1000pF, RT = 390kΩ
VCC = VENB = 0.9V, CCP = 1000pF, RT = 240kΩ
VCC = 3.5V, VENB = 0
2
2
0.1
0.1
1.5
1.5
IC
µA
current
MIP804
MIP803
MIP804
VCC = 3.3V, VENB = 0
VCC = VENB = 3.5V, RT = 390kΩ
VCC = VENB = 3.3V, RT = 240kΩ
1
1
Consumption current
ICC
mA
Note: ∆fv: Caluculation is made as follows:
f1 + f2
∆fv = (fosc /
− 1) × 100
2
MIP803 f1: fosc at VCC = 1.5V, f2: fosc at VCC = 3.5V
MIP804 f1: fosc at VCC = 0.9V, f2: fosc at VCC = 3.5V
■ Pin Descriptions
Pin No.
Symbol
GND
GND
CIL
Pin Name
GND pin
GND pin
Description
1
2
3
4
5
6
7
GND pin
GND pin
Output for voltage step-up Drain pin of the voltage step-up MOS FET
GND pin GND pin
Output for EL driving Drain pin of the EL drive MOS FET
Internal voltage step-up pin Capacitor connection pin for internal voltage step-up power supply
GND
ELD
VCP
VCC
Power input pin
Power input pin
ENABLE signal input pin for controlling the EL driver (if ENB = H, the EL
driver becomes ON and if ENB = L/OPEN, it becomes OFF)
8
ENB
ENABLE pin
9
RT1
RT2
Internal oscillation output Internal oscillation circuit output pin
10
OSC resistor connecting pin OSC resistor connection pin for connecting the OSC resistor between RT1 and RT2
2
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