MIP805 [PANASONIC]

Silicon MOS IC; 硅MOS IC
MIP805
型号: MIP805
厂家: PANASONIC    PANASONIC
描述:

Silicon MOS IC
硅MOS IC

外围驱动器 驱动程序和接口 接口集成电路 光电二极管
文件: 总2页 (文件大小:38K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Intelligent Power Devices (IPDs)  
MIP805  
Silicon MOS IC  
Features  
Output MOSFET with high breakdown voltage for voltage step-up,  
unit: mm  
EL driver and CMOS control circuits are integrated into one chip.  
Oscillation circuit is incorporated  
10  
6
EL voltage controlled push-pull drive system achieves higher EL  
1
5
light intensity. (160Vp-p  
)
Applications  
EL drive  
2 to 12˚  
6.3±0.2  
4.3±0.2  
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Power supply voltage  
Input voltage (ENB)  
Output voltage (CIL)  
Output voltage (DC)  
Output voltage (EL)  
Symbol  
VCC  
Ratings  
0.5 to 6  
0.5 to VCC + 0.5  
0.5 to 100  
0.5 to 100  
0.5 to 100  
0.5 to 100  
80  
Unit  
V
2 to 6˚  
VENB  
VCIL  
VDC  
V
1: CIL 6: RT1  
V
2: DC  
3: NC  
4: EL  
7: RT2  
8: GND  
9: ENB  
V
VEL  
V
5: EL 10: VCC  
SSONF-10D Package  
−−−−  
−−−  
Output voltage (EL)  
VEL  
V
Output current (CIL)  
ICIL  
mA  
mA  
mA  
mW  
°C  
°C  
°C  
−−−−  
−−−  
Output current (EL)  
IEL  
20  
Output current (EL)  
IEL  
PD  
20  
Allowable power dissipation  
150  
Operating ambient temperature Topr  
Operating Junction temperature Tch  
20 to +70  
20 to +125  
55 to +125  
Storage temperature  
Tstg  
Block Diagram  
L
D
C
CIL  
DC  
VCC  
fOSC/4  
VCIL  
EL  
fOSC  
RT1  
RT  
EL  
Oscillation  
circuit  
EL  
RT2  
GND  
Q
NQ  
Voltage  
control  
circuit  
ENB  
1
Intelligent Power Devices (IPDs)  
MIP805  
Electrical Characteristics (Ta = 25 ± 2°C)  
Parameter  
Operating condition  
Supply voltage  
Symbol  
Conditions*  
min  
typ  
max  
3.5  
Unit  
VCC  
VIH  
VIL  
2.5  
1
3
V
V
V
Input voltage (High) (ENB)  
Input voltage (Low) (ENB)  
Oscillation circuit  
VCC = 2.5 to 3.5V  
CC = 2.5 to 3.5V  
V
0
0.3  
Oscillator output frequency (RT1  
Inductor frequency (CIL)  
Inductor duty cycle (CIL)  
Output  
)
fOSC  
RT = 270kΩ  
RT = 270kΩ  
98  
24.5  
70  
116  
29  
134  
33.5  
80  
kHz  
kHz  
%
fCOIL  
DUTY  
75  
Output breakdown voltage  
VDSS  
ENB = 0, IDS = 100µA  
VDS = 20V  
100  
70  
V
Output current IDSS  
ON-state resistance Ron  
OFF-leakage current IDSS(off)  
Output current IDSS  
OFF-leakage current IDSS(off)  
Output current IDSS  
OFF-leakage current IDSS(off)  
mA  
Inductor  
output (CIL)  
ID = 10mA  
10  
15  
10  
ENB = 0, VDS = 80V  
VDS = 20V  
µA  
mA  
µA  
mA  
µA  
10  
10  
EL  
output (EL)  
ENB = 0, VDS = 80V  
VDS = 20V  
10  
10  
EL  
−−−−  
output (EL)  
ENB = 0, VDS = 80V  
EL output voltage control  
EL output voltage  
VEL  
148  
160  
0.5  
180  
VP-P  
Consumption current  
Quiescent circuit current  
ICOFF  
IC  
VCC = 3.5V, VENB = 0, RT = 270kΩ  
VCC = VENB = 3.5V, RT = 270kΩ  
0.1  
10  
µA  
µA  
Circuit current  
*
VCC = 3V, ENB = 3V, and GND = 0 unless otherwise specified  
Timing Chart  
ENB  
VICL  
80V  
EL  
80V  
EL  
Q
NQ  
EL-EL  
160VP-P  
2

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