MA3J142E [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型型号: | MA3J142E |
厂家: | PANASONIC |
描述: | Silicon epitaxial planar type |
文件: | 总4页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Switching Diodes
MA3J142D (MA142WA), MA3J142E (MA142WK)
Silicon epitaxial planar type
Unit: mm
+0.1
–0
+0.1
0.3
0.15
–0.05
For switching circuits
3
■ Features
1
2
• Two isolated elements contained in one package, allowing high-
(0.65)(0.65)
0.9 0.1
density mounting
1.3 0.1
2.0 0.2
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Symbol
VR
Rating
80
Unit
V
VRM
IF
80
V
Single
Double
Single
Double
Single
Double
100
mA
MA3J142D MA3J142E
Cathode 1 Anode 1
Cathode 2 Anode 2
Forward current
1
2
3
150
EIAJ: SC-79
SMini3-F1 Package
Anode
Cathode
IFM
225
mA
mA
Peak forward
current
340
Marking Symbol:
• MA3J142D: MO • MA3J142E: MU
IFSM
500
Non-repetitive peak
forward surge current
*
750
Internal Connection
Junction temperature
Storage temperature
Tj
150
°C
°C
3
3
Tstg
−55 to +150
Note) : t = 1 s
*
1
2
Min
80
1
2
E
D
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Forward voltage
Symbol
Conditions
IF = 100 mA
Typ
Max
Unit
V
VF
VR
IR
1.2
Reverse voltage
IR = 100 µA
VR = 75 V
V
Reverse current
100
15
2
nA
pF
Terminal capacitance
MA3J142D
MA3J142E
Ct
VR = 0 V, f = 1 MHz
Reverse recovery time * MA3J142D
MA3J142E
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
10
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. : trr measurement circuit
*
Bias Application Unit (N-50BU)
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 0.1 IR
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
Pulse Generator
(PG-10N)
Wave Form Analyzer
(SAS-8130)
Rs = 50 Ω
Ri = 50 Ω
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SKF00018BED
1
MA3J142D, MA3J142E
Characteristics charts of MA3J142D
IF VF
IR VR
VF Ta
104
103
102
10
103
1.6
1.2
0.8
0.4
0
100°C 25°C
Ta = 150°C
102
Ta = 150°C
−20°C
100°C
IF = 100 mA
10
1
10 mA
3 mA
25°C
10 −1
1
10 −1
10 −2
−40
0
40
80
120 160 200
0
20
40
60
80
100 120
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
Ambient temperature Ta °C
(
V
)
(
V
)
Reverse voltage VR
Forward voltage VF
IR Ta
Ct VR
IF(surge) tW
103
102
10
104
103
102
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
f = 1 MHz
Ta = 25°C
Ta = 25°C
IF(surge)
VR = 75 V
tW
35 V
6 V
Non repetitive
1
1
10 −1
10 −1
−40
10 −1
1
10
0
20
40
60
80
100 120
0
40
80
120 160 200
(
V
)
Reverse voltage VR
(
)
Pulse width tW (ms)
Ambient temperature Ta °C
SKF00018BED
2
MA3J142D, MA3J142E
Characteristics charts of MA3J142E
IF VF
IR VR
VF Ta
103
105
104
103
102
10
1.6
Ta = 150°C
102
10
1.2
100°C
25°C
IF = 100 mA
0.8
Ta = 150°C
1
10 mA
100°C
25°C
0.4
3 mA
10 −1
−20°C
10 −2
0
−40
1
0
40
80
120 160 200
0
0.2
0.4
0.6
0.8
1.0
)
1.2
0
20
40
60
80
(
100 120
)
V
(
)
Ambient temperature Ta °C
(
Forward voltage VF
V
Reverse voltage VR
IR Ta
Ct VR
IF(surge) tW
105
104
103
102
10
103
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta = 25°C
f = 1 MHz
Ta = 25°C
IF(surge)
VR = 75 V
35 V
6 V
tW
Non repetitive
102
10
1
1
−40
10 −1
0
40
80
120 160 200
10 −1
1
10
0
20
40
60
80
100 120
(
V
)
(
)
(
)
Reverse voltage VR
Ambient temperature Ta °C
Pulse width tW ms
SKF00018BED
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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