MA3J142E [PANASONIC]

Silicon epitaxial planar type; 硅外延平面型
MA3J142E
型号: MA3J142E
厂家: PANASONIC    PANASONIC
描述:

Silicon epitaxial planar type
硅外延平面型

整流二极管 光电二极管
文件: 总4页 (文件大小:107K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Switching Diodes  
MA3J142D (MA142WA), MA3J142E (MA142WK)  
Silicon epitaxial planar type  
Unit: mm  
+0.1  
–0  
+0.1  
0.3  
0.15  
–0.05  
For switching circuits  
3
Features  
1
2
Two isolated elements contained in one package, allowing high-  
(0.65)(0.65)  
0.9 0.1  
density mounting  
1.3 0.1  
2.0 0.2  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage  
Maximum peak reverse voltage  
Symbol  
VR  
Rating  
80  
Unit  
V
VRM  
IF  
80  
V
Single  
Double  
Single  
Double  
Single  
Double  
100  
mA  
MA3J142D MA3J142E  
Cathode 1 Anode 1  
Cathode 2 Anode 2  
Forward current  
1
2
3
150  
EIAJ: SC-79  
SMini3-F1 Package  
Anode  
Cathode  
IFM  
225  
mA  
mA  
Peak forward  
current  
340  
Marking Symbol:  
MA3J142D: MO MA3J142E: MU  
IFSM  
500  
Non-repetitive peak  
forward surge current  
*
750  
Internal Connection  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
3
3
Tstg  
55 to +150  
Note) : t = 1 s  
*
1
2
Min  
80  
1
2
E
D
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Forward voltage  
Symbol  
Conditions  
IF = 100 mA  
Typ  
Max  
Unit  
V
VF  
VR  
IR  
1.2  
Reverse voltage  
IR = 100 µA  
VR = 75 V  
V
Reverse current  
100  
15  
2
nA  
pF  
Terminal capacitance  
MA3J142D  
MA3J142E  
Ct  
VR = 0 V, f = 1 MHz  
Reverse recovery time * MA3J142D  
MA3J142E  
trr  
IF = 10 mA, VR = 6 V  
Irr = 0.1 IR , RL = 100 Ω  
10  
3
ns  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Absolute frequency of input and output is 100 MHz.  
3. : trr measurement circuit  
*
Bias Application Unit (N-50BU)  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: March 2004  
SKF00018BED  
1
MA3J142D, MA3J142E  
Characteristics charts of MA3J142D  
IF VF  
IR VR  
VF Ta  
104  
103  
102  
10  
103  
1.6  
1.2  
0.8  
0.4  
0
100°C 25°C  
Ta = 150°C  
102  
Ta = 150°C  
20°C  
100°C  
IF = 100 mA  
10  
1
10 mA  
3 mA  
25°C  
10 1  
1
10 1  
10 2  
40  
0
40  
80  
120 160 200  
0
20  
40  
60  
80  
100 120  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
(
)
Ambient temperature Ta °C  
(
V
)
(
V
)
Reverse voltage VR  
Forward voltage VF  
IR Ta  
Ct VR  
IF(surge) tW  
103  
102  
10  
104  
103  
102  
10  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
f = 1 MHz  
Ta = 25°C  
Ta = 25°C  
IF(surge)  
VR = 75 V  
tW  
35 V  
6 V  
Non repetitive  
1
1
10 1  
10 1  
40  
10 1  
1
10  
0
20  
40  
60  
80  
100 120  
0
40  
80  
120 160 200  
(
V
)
Reverse voltage VR  
(
)
Pulse width tW (ms)  
Ambient temperature Ta °C  
SKF00018BED  
2
MA3J142D, MA3J142E  
Characteristics charts of MA3J142E  
IF VF  
IR VR  
VF Ta  
103  
105  
104  
103  
102  
10  
1.6  
Ta = 150°C  
102  
10  
1.2  
100°C  
25°C  
IF = 100 mA  
0.8  
Ta = 150°C  
1
10 mA  
100°C  
25°C  
0.4  
3 mA  
10 1  
20°C  
10 2  
0
40  
1
0
40  
80  
120 160 200  
0
0.2  
0.4  
0.6  
0.8  
1.0  
)
1.2  
0
20  
40  
60  
80  
(
100 120  
)
V
(
)
Ambient temperature Ta °C  
(
Forward voltage VF  
V
Reverse voltage VR  
IR Ta  
Ct VR  
IF(surge) tW  
105  
104  
103  
102  
10  
103  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Ta = 25°C  
f = 1 MHz  
Ta = 25°C  
IF(surge)  
VR = 75 V  
35 V  
6 V  
tW  
Non repetitive  
102  
10  
1
1
40  
10 1  
0
40  
80  
120 160 200  
10 1  
1
10  
0
20  
40  
60  
80  
100 120  
(
V
)
(
)
(
)
Reverse voltage VR  
Ambient temperature Ta °C  
Pulse width tW ms  
SKF00018BED  
3
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  

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