EVAL6569 [PANASONIC]

THE L6569 A NEW HIGH VOLTAGE IC DRIVER FOR ELECTRONIC LAMP BALLAST; THE L6569新的高压IC驱动灯的电子镇流器
EVAL6569
型号: EVAL6569
厂家: PANASONIC    PANASONIC
描述:

THE L6569 A NEW HIGH VOLTAGE IC DRIVER FOR ELECTRONIC LAMP BALLAST
THE L6569新的高压IC驱动灯的电子镇流器

高压 电子 驱动
文件: 总14页 (文件大小:192K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AN880  
APPLICATION NOTE  
®
THE L6569: A NEW HIGH VOLTAGE IC DRIVER FOR  
ELECTRONIC LAMP BALLAST  
by G. Calabrese and T. Castagnet  
Figure 1: CFL series resonant half bridge inverter.  
INTRODUCTION  
Electronic lamp ballasts are now popular in both  
consumer and industrial lighting. They offer power  
saving, flicker free operation and reduced sizes.  
Improvements to the light control and cost reduc-  
tion of the ballast will broaden their market accep-  
tance.  
Today designers focus on reducing the cost of the  
ballast, but also work to add features to the bal-  
last like saving energy by dimming the light, or in-  
creasing the life time with better preheat and pro-  
tections. Such requirements have contributed to  
the development of dedicated high voltage con-  
trollers like the L6569, which are able to drive the  
floating transistor of a symmetric half bridge in-  
verter. This device is a simple, monolithic oscilla-  
tor-half bridge driver that allows quick design of  
the ballast.  
Figure 2: Current and voltage of the STD3NA50  
MOSFETs when driven in ZVS with  
the L6569.  
HIGH VOLTAGE IC DRIVERS IN BALLAST AP-  
PLICATIONS  
The voltage fed half bridge  
ID  
VDS  
Voltage fed series resonant half bridge inverters  
are currently used for Compact Fluorescent Lamp  
ballasts (CFL), for Halogen Lamp transformers,  
and for many European Tube Lamp (TL) ballasts.  
This simple converter is preferred for new de-  
signs, because it minimizes the off state voltage  
of the power transistors to the peak line voltage,  
and requires only one resonant choke. In addition  
this choke protects the half bridge against short  
circuits across lamp terminals. However overheat-  
ing and overcurrent occur during open load op-  
eration. The inverter robustness must be im-  
proved, or some protections are required.  
GND  
LVG  
GND  
RF  
GND  
2 µs/dv ; 50 V/dv ; 0.1 A/dv  
gle frequency with a saturable pulse transformer  
(see fig. 1) to drive the transistors. This type of  
design has a higher component count, a higher  
tolerance on the switching frequency, and it can-  
not adjust the lamp power.  
The only way to design a cost effective, compact  
and smart control of the lamp is to use a dedi-  
cated I.C. that is able to drive the upper transistor  
of an symmetric half bridge inverter. Such control-  
lers require a high voltage capability for the float-  
ing transistor driver [2]. MOSFETs are preferred  
over Bipolar transistors as power switches be-  
cause their gate driver requires a lower supply  
current and a smaller silicon size [3].  
The half bridge inverter operates in Zero Voltage  
Switching (ZVS) resonant mode [1], to reduce the  
transistor switching losses and the electromag-  
netic interference generated by the output wiring  
and the lamp.  
Fully integrated ballast controllers  
By varying the switching frequency, the half  
bridge inverter is able to modulate the lamp  
power. However most current designs use a sin-  
1/14  
February 2003  
AN880 APPLICATION NOTE  
and the circuit requires only 150 µA at power up.  
THE L6569 AND ITS APPLICATIONS  
The L6569  
The L6569 integrates a high voltage Lateral  
DMOS transistor in place of the usual external di-  
ode [2] to charge the bootstrap capacitor for the  
upper buffer. Figure 5 shows DMOS operating as  
a synchronous rectifier.  
The L6569 is able to directly control a symmetric  
half bridge inverter of a fluorescent lamp ballast,  
or a low voltage halogen lamp transformer.Two  
270mA buffers drive the inverter MOSFETs in  
complementary fashion with a 1.25µs built-in  
dead time to prevent cross conduction. The buffer  
for the upper Mosfet is driven through a 600V  
level shifter realized in BCD off line technology.  
The oscillator, similar to a CMOS 555 timer, oper-  
ates from 25 to 150 kHz with a +/-5% maximum  
tolerance. The internal 15V shunt regulator has a  
9V Under Voltage Lock Out with an 1V hysteresis,  
The applications  
The primary application for the L6569 is the Com-  
pact Fluorescent Lamp. With the oscillator, the  
supply and the Mosfet drivers it is the core of the  
application, and designers can customize the cir-  
cuit to their requirements.  
Figure 3: Block diagram of the L6569.  
VS  
BOOT  
CHARGE  
PUMP  
UVLO  
LEVEL  
SHIFTER  
HVG  
HIGH  
SIDE  
DRIVER  
RF  
CF  
OUT  
LOGIC CONTROL  
with DEAD TIME  
LVG  
LOW  
SIDE  
DRIVER  
GND  
Figure 4: Basic application diagram using the L6569 and two STD4NK50Z MOSFETs.  
100nF  
180K  
10µF  
22Ω  
STD4NK50Z  
L6569  
10KΩ  
LAMP  
10µF  
AC LINE  
22Ω  
1nF  
D02IN1385  
2/14  
AN880 APPLICATION NOTE  
Figure 5: Bootstrap capacitor charge.  
ON  
15.6 V  
600V  
120  
CHARGE PUMP CIRCUIT  
ON  
LOGIC  
L6569  
Figure 6: Basic diagram for 2x105 W lamp ballast in full bridge configuration.  
HV  
100nF  
47  
100nF  
BOOT  
BOOT  
VS  
VS  
RF  
CF  
VS  
RF  
47  
47  
HVG  
OUT  
HVG  
OUT  
L6569  
L6569  
CF  
EXTERNAL  
OSCILLATOR  
47  
LVG  
LVG  
GND  
GND  
STB9NK50Z  
D02IN1386  
Typical industrial TL ballasts requires complex  
control with dimming or automation interface.  
Here the L6569 is a driver between the power  
and control blocks. To use it with an external os-  
cillator, pin CF is used as an 0-12V logic input,  
and the L6569 becomes a high voltage buffer.  
Applications with power above 150W require a full  
bridge inverter. Figure 6 shows how two L6569  
drive such a MOSFET bridge. If no external con-  
trol is required, the first L6569 master can control  
the switching with its oscillator, and synchronizes  
the other driver as (slave).  
The L6569 start up  
Two versions of the L6569 are available with dif-  
ferent start up characteristics. The L6569 drives  
the lower MOSFET ON at power-up until the sup-  
ply voltage reaches the Under Voltage Lock Out.  
The bootstrap capacitor is precharged to 4.6V  
and both the lower and the upper MOSFETs will  
switch immediately with the oscillator. This is in-  
tended for inverters which use only one DC block-  
ing capacitor connected to the power ground, as  
shown on figure 4 for CFL ballast.  
3/14  
AN880 APPLICATION NOTE  
The L6569A holds both MOSFETs OFF until the  
Under Voltage Lock Out is reached. This is in-  
tended for inverters using 2 decoupling capacitors  
in half bridge as shown on figure 12. The inverter  
is totally off, so that the voltage at the capacitors  
center node is not unbalanced by the leakage  
path during power on.  
Figure 7: Current and voltage of the STP8NA50  
MOSFET at turn off with the L6569.  
TGD = 245 ns ,Tc = 95 ns, E = 93 µJ  
@ Tj = 50°C, RG = 22 .  
GD  
T
Tc  
D
I
CONSIDERATIONS ON THE L6569 ENVIRON-  
MENT  
To illustrate the benefits of the L6569 in the CFL  
applications, a demonstration board was devel-  
oped to supply Sylvania 18W DULUX lamp (ref:  
CF18DT/E). The following chapters summarize  
the application considerations applied in this de-  
sign. The schematic, lay out and components list  
are shown in appendix A.  
V
GS  
D
GND  
GND  
GND  
V
50 ns/dv ; 1 A/dv ; 5 V/dv ; 50V/dv  
The built-in dead time circuit acts when a MOS-  
FET turns off, delaying the turn on of the opposite  
transistor for 1.25 µs. The voltage VOUT between  
the 2 MOSFETs must switch within the minimum  
dead time (0.85 µs), as shown on figure 8, to  
avoid bridge cross conductions and transistors  
overheat.  
Symmetric half bridge operation  
To supply a fluorescent lamp, the ballast has to  
achieve 3 functions: pre heat, ignition, and normal  
lamp operation. The serial resonance occurs be-  
tween the choke and the capacitor in parallel with  
the lamp. The choice of these components deter-  
mines the lamp ignition voltage and the nominal  
lamp current.  
Figure 8: STD3NA50 MOSFET turn off when  
driven by the L6569. TC + TGD < TD  
Since the inverter using the L6569 and MOSFETs  
can operate at a higher frequency than conven-  
tional solutions, the size of the passive compo-  
nents will be reduced. Such inverter can operate  
up to 150 kHz in ZVS mode, and the switching  
losses of the power transistors only limits the fre-  
quency. In new design this frequency should be  
set between 50 and 100 kHz. For instance with  
an 18W lamp, a frequency increase from 33 to 50  
kHz will lead to a 40% reduction of the choke  
size.  
TD  
VDS  
ID  
GND  
TC  
LVG  
GND  
To operate in Zero Voltage Switching (ZVS), the  
switching frequency is higher than the resonant  
frequency. All operation phases of the ballast are  
secure in this mode. When the bootstrap transis-  
tor is conducting, no pulse current will flow from  
pin BOOT to pin VS, as it might happen in Zero  
Current Switching. The bootstrap transistor re-  
mains in its Safe Operating Area, and its dissipa-  
tion is negligible.  
TGD  
RF  
GND  
200 ns/dv ; 50 V/dv ; 0.1 A/dv  
The MOSFET voltage selection  
Since the ballast is connected to the ac mains, it  
must handle any spurious voltage spikes. When  
the front end RFI filter and the clamping device,  
such as a varistor, absorbes totally the spike en-  
ergy, MOSFETs can have the same 600V mini-  
mum breakdown voltage BVDSS as the L6569.  
The MOSFET drive  
The ZVS drive technique requires only a fast turn  
off capability as shown on figure 2, and the tran-  
sistor buffers are designed with a stronger sink  
current. The two MOSFET buffers of the L6569  
can sink a 400 mA peak current on capacitive  
load. Typically these buffers can drive any MOS-  
FETs in TO220 package.  
Otherwise when the upper MOSFET is on, the re-  
sidual default may be applied to the L6569. Al-  
though the pin OUT breakdown voltage is higher  
than 600V, it has a poor avalanche robustness.  
Therefore the lower MOSFET protects the driver  
by having a lower BVDSS. A MOSFET with a mini-  
mum BVDSS up to 500V will achieve safely this  
task.  
Figure 7 shows an example with the STP8NA50  
that has an 0.85 resistance RDS-ON  
.
4/14  
AN880 APPLICATION NOTE  
Figure 9. L6569 driver protection against voltage spikes.  
H.V.+  
BV OUT > 600V  
ON  
15V  
VOUT  
I
L6569  
OFF  
mA, a secondary winding on the resonant choke  
is an easy supply alternative.  
The auxiliary supply of the converter  
The circuit consumption is defined by the MOS-  
FETs gate charge, the I.C. consumption, the os-  
cillator, and the shunt regulator. Several circuits  
are possible.  
In many applications a snubber is used to reduce  
the dissipation in the MOSFETs. When this snub-  
ber is used in conjunction with a start up resistor  
(RS in Figure 10), a non dissipative supply is  
achieved almost for free.  
At start up the I.C. is consuming 150 µA, and there-  
fore only a small supply resistor is required. During  
operation the capacitor provides the supply current.  
To avoid cross conduction, the capacitance is lim-  
ited by the driver dead time TD . Hence the capaci-  
tive supply current IC is also limited.For a CFL bal-  
last this circuit easily supplies the required  
operating current. Using a CF18DT lamp ( IL > 230  
mA) the required capacitance is 470 pF on 230 Vac  
line. At 50 kHz the average capacitive current is 6  
mA, as described in appendix B.  
The ballast shutdown  
The L6569 allows several ways (see figg. 11, 12  
and 13) to shutdown the ballast [4]: by acting on  
the CF input oscillator pin to turn off the upper  
MOSFET or by acting on the VS supply pin with  
the Under Voltage Lock Out.  
Acting on CF (Fig. 11) a limiting resistor RL has to  
be used, and it has to be: RL CF > 1µs.  
When the shutdown is realized acting on Vs pin,  
(see fig. 12) a limiting resistor Rs must be used to  
slow down the discharge of the supply filter Cs.  
The constant time of the discharge must be  
greater than 10 periods of the switching fre-  
quency:  
10  
Cs fsw  
RS ≥  
Connecting the CF pin to ground GND stops the  
oscillator, and the lower MOSFET will remain ON.  
Therefore the bootstrap capacitor remains  
When the required driver current is higher than 10  
Figure 10: Non dissipative auxiliary supply using the transistor snubber.  
1mA WHEN STARTING  
6 mA WHEN 50 kHz SWITCHING  
220kΩ  
Rs  
C
470 pF  
310 V  
bootstrap  
circuit  
Cs  
L6569  
5/14  
AN880 APPLICATION NOTE  
charged and the circuit can restart immediately.  
This method is suitable when the inverter uses  
only one DC blocking capacitor connected to the  
power ground, as used on figure 11 for Compact  
Fluorescent Lamp. Pulling the VS voltage below  
the UVLO turns off the oscillator and gives the  
same bridge configuration.  
For the L6569A, discharging the VS supply below  
the UVLO turns off both MOSFETs. An SCR like  
the X0202MA may be used for the reset function.  
If the current flowing through the supply resistor is  
higher than the SCR holding current (see figure  
12), the SCR will remain on and the two MOS-  
FETs off. Removing power or commutating the  
SCR allows a new start up [4].  
Otherwise a disable circuitry that turns off the two  
MOSFETs (see figure13), can achieve the shut-  
down function. Compared to the SCR solution,  
the shutdown is immediate and the inverter can  
restart on the disable order.  
Figure 11: L6569 shutdown through the CF oscillator pin.  
L 6569  
RF  
RL  
CF  
ON  
Figure 12: Shutdown with a thyristor & a serial resistor to slow down the supply voltage decay.  
L 6569A  
R
Rs  
OFF  
OFF  
C
R
shutdown  
Figure 13: L6569 disable circuitry with both MOSFETs off.  
H.V.  
100nF  
Vs  
VS  
BOOT  
HVG  
OUT  
LVG  
RF  
5.6k  
200  
200  
CF  
GND  
22  
L6569  
VIN  
W
4.7 k  
HCF4011  
BC327  
DISABLE  
6/14  
AN880 APPLICATION NOTE  
THE LAMP SEEN BY THE ELECTRONIC DE-  
SIGNER  
The preheat  
Preheat techniques are used in CFL ballasts to  
reduce the ignition lamp voltage. During this  
phase the lamp is characterized by a high imped-  
ance that forces the electrical conduction through  
the preheat filaments. These filaments initially  
have a low resistance that will increase by 5 times  
during the preheat. The preheat typically lasts  
from 400 ms to 1 s, and is achieved by controlling  
either the current or the voltage of the filaments.  
The lamp equivalent impedance  
The compact fluorescent lamps are specified at  
25 kHz (IEC 929). The MOSFETs and the L6569  
allow to increase the switching frequency, but the  
sensitivity of the lamp to the frequency needs to  
be analyzed.  
A few samples of the CF18DT/E lamp were  
tested by varying the frequency and the current of  
the lamp. The figure 14 shows the lamp imped-  
ance versus its current as it varies from 0.1A to  
0.23A with 5 frequencies from 25 to 150 kHz  
(TAMB = 25°C).  
For a current control the filaments are in series  
with the resonant network as shown on figure  
16a. When the inverter frequency is constant, a  
positive temperature coefficient thermistor (PTC)  
in parallel with the lamp achieves the task by ad-  
justing both the filament current and the preheat  
duration. The board uses a 150PTC with two  
8.2 nF capacitors. The preheat lasts 0.8s and the  
filament current is 0.45 Arms. The PTC is a cheap  
device, but it is dissipative and works only once at  
power-up.  
Figure 14: Variation of the lamp impedance  
versus its current for several  
switching frequencies.  
R lamp (Ohms)  
1200  
25 kHz  
50 kHz  
100 kHz  
150 kHz  
1000  
800  
600  
400  
Figure 16: Basic preheat current control diagram  
(a); preheat filament energy curve (b)  
200  
0
0.05  
0.1  
0.15  
0.2  
0.25  
0.3  
I lamp (A)  
From the tests the impedance appears insensitive  
to the frequency for such lamps. The specified im-  
pedance might be valid for higher frequency op-  
eration. The relative lamp light output was meas-  
ured as proposed in reference [5]. The light flux  
increases slightly in that frequency range, but can  
be considered constant.  
I CTL  
(A)  
LAMP  
Obviously the impedance is sensitive to the cur-  
rent with a negative coefficient, and the ballast  
operates with a non linear impedance [6]. When  
current is half the nominal one, the impedance is  
2.6 times higher, and the voltage is only 25%  
higher (see figure 15).  
E
If  
E=R.I²  
I CTL  
Figure 15: Variation of the average impedance  
(B)  
and voltage of the lamp  
R (Ohms)  
U (V)  
1200  
200  
t
Rlamp  
Vlamp  
900  
600  
300  
150  
100  
50  
The preheat can be achieved with a filament volt-  
age control. The filaments are supplied by two  
auxiliary windings of the resonant choke as  
shown figure 17a. During the preheat the L6569  
frequency is increased, and the choke operates  
0
0
0.05  
0.1  
0.15  
I (A)  
0.2  
0.25  
7/14  
AN880 APPLICATION NOTE  
as a transformer supplying the voltage to the fila-  
ments. Only few components are added around  
the L6569 (see figure 18), and the control of the  
preheat energy is less sensitive to the preheat du-  
ration and the inverter frequency (see figure 17b).  
The start up initialization  
The initial conditions of the power switching start  
up requires care; especially if the resonant and  
switching frequencies are close to each other.  
The resonant network is not loaded and the full  
Figure 17: Basic preheat voltage control diagram (a); preheat filament energy curve (b)  
(A)  
VCTL  
LAMP  
E
Vf  
VCTL  
(B)  
E=V²/R  
t
Figure 18: Double frequency control for the L6569 with programmed frequency and duration.  
1_Vs  
2_RF  
RF  
3_CF  
R
CF  
L6569  
C
CF_ST  
8/14  
AN880 APPLICATION NOTE  
line voltage VDC is applied when the oscillator  
starts. The ballast has to start directly with its  
nominal conditions to remove any transient oscil-  
lation. Hence the operation runs in ZVS mode  
with no spurious lamp ignition. This situation does  
not occur with the saturable transformer drive, be-  
cause the saturation limits naturally the current by  
increasing the frequency.  
In the example the resonant capacitors are pre-  
set to be compatible with the choke current rise  
(see figure 19). The blocking capacitor is pre-  
charged to approximately half VDC by 2 biasing  
resistors, and the lower Mosfet also discharges  
the resonant capacitor to ground (see figure 20).  
Therefore the blocking capacitor never goes  
above 2/3 of the line voltage VDC (250V rating),  
the operation is safe in ZVS mode. The L6569 is  
here preferred to the L6569A, because the lower  
The lamp removal protection  
Used in TL ballast, the lamp removal protection is  
frequently also requested in the "plug-in" CFL bal-  
last . Depending of the topology and the preheat  
mode, the lamp removal behaves as:  
- a noload resonant mode when the choke and  
the capacitor are still connected to the in-  
verter ; a required overcurrent protection in-  
creases the frequency to reduce the current;  
- an open circuit mode when the lamp filaments  
are inserted in the resonant circuit.  
When the circuit is open, the choke is not sup-  
plied. The MOSFETs turn off slowly generating  
bridge cross conduction, and undesirable dissipa-  
tion losses (see figure 21). The detection stops  
the switching to eliminate the cross conduction.  
Figure 21: Drain current and voltage STP8NA50  
Figure 19: Waveforms of the choke current and  
the capacitor voltages in steady state  
preheat.  
MOSFET operating with noload.  
ID = 2 A peak  
IDEAL INITIAL TIME  
VD  
I I  
VGS  
GND  
GND  
ID  
GND  
GND  
GND  
VB  
VBI  
5 s/dv ; 50 V/dv ; 0.5 A/dv  
µ
100ns/dv ; 50 V/dv ; 5V/dv ; 1 A/dv  
Mosfet is on at power-up.  
Figure 20: Configuration of the resonant network during the initialization of the driver.  
VS<UVLO  
2.4 mH  
I I  
VBI  
ON  
L6569  
VB  
4nF  
100 nF  
2 x 180 k  
9/14  
AN880 APPLICATION NOTE  
Figure 22: Open load detection example.  
L6569  
LAMP  
3_CF  
4_GND  
10.R  
18V  
100.R  
10.R  
11.R  
duced, and the ballast becomes cheaper.With its  
supply and its oscillator the L6569 is versatile,  
and its flexibility permits to design any improved  
power control.  
Several ways can achieve the protection task.  
First it can be done by sensing the resonant cur-  
rent through a MOSFET source resistor or a sec-  
ondary winding on the choke. The switching is  
stopped when a large current reduction is de-  
tected by analog means.  
BIBLIOGRAPHY  
A logic circuit can also detect the presence of the  
lamp filaments. One end of a filament is always  
connected to a fixed voltage. If the other end of  
the filament is connected through a high imped-  
ance resistor to another voltage, the absence of  
the filament can be easily detected by monitoring  
the resistor voltage change as shown on figure  
22.  
[1]: AN 527 "Electronic fluorescent lamp ballast"  
A.Vitanza, R.Scollo, SGS-THOMSON  
[2]: Smart Power ICs, Chapter 8, High voltage in-  
tegrated circuits for off-line power applications.  
C.Diazzi, SGS-THOMSON  
[3]: AN 512 "Characteristics of power semicon-  
ductors" JM Peter, SGS-THOMSON  
[4] : "The L6569 half bridge driver: the shutdown  
function"  
CONCLUSION  
[5] : "Compatibility test of dimming electronic bal-  
lasts used in daylighting and environment con-  
trols", A.Buddenberg, Rensselaer Polytechnic In-  
stitute  
[6]: "PSpice High Frequency Dynamic Fluores-  
cent Lamp Model", Bryce Hesterman, APEC’96,  
p.641  
The foregoing note shows how high voltage driv-  
ers, like the L6569, simplify the design of the  
lamp ballast. These devices includes all the cir-  
cuitry to drive MOSFETs in half bridge inverter.  
Since the optimized switching frequency in-  
creases above 50 kHz with a low tolerance, the  
size of the passive resonant components is re-  
10/14  
AN880 APPLICATION NOTE  
APPENDIX A: CFL DEMONSTRATION BOARD  
WITH THE L6569  
The resonant ballast  
The value of the choke (L1) and the two capaci-  
tors (C7 & C8) in parallel with the lamp determine  
the lamp ignition voltage and the nominal lamp  
current. During the ignition the lamp impedance is  
essentially infinite, and the filaments resistance is  
only the serial load. To generate the ignition volt-  
age, the switching frequency is set close to the  
resonance frequency. In normal operation the  
choke resonates with the capacitors C7 & C8  
(parallel loading), but also with the decoupling ca-  
pacitor C6 (serial loading). The current mode pre-  
heat uses a 150Positive Temperature Coeffi-  
cient thermistor. Inserted in the capacitive series  
(C7 & C8), the PTC produces a 0.45 Arms fila-  
ment current during the initial 0.8 s (reference:  
307C1253BHEAB from CERA-MITE).  
A demonstration board was developed as an ex-  
ample for Compact Fluorescent Lamp ballast. It is  
optimised for a CF18DT/E/830 18W lamp from  
Osram-Sylvania. Using the L6569 the circuit  
achieves preheat, ignition and normal lamp op-  
eration. The power transistors are two STD3NA50  
500V-3MOSFETs in I-PACK package.  
Board description  
The three sections of the board are an AC input  
rectifier, the half bridge inverter, and the resonant  
ballast. By changing the connection on the input  
mains, the ballast can operate either on 120 Vac  
mains with a voltage doubler rectification, or on  
230 Vac mains with a full wave rectification. The  
input resistor R1 limits the initial inrush current  
charging the bulk capacitors. The L6569 operates  
with a single 50 kHz switching frequency pro-  
grammed by R4 and C1. Two fast diodes D2 & D3  
synchronize the oscillator to keep the switching in  
ZVS mode. The control circuit requires 4.5 mA to  
supply the I.C., the MOS gate drives, and the os-  
cillator. Its supply delivers at least 6.5 mA as de-  
scribed in appendix B. The start up resistor also  
balances the voltage across the two bulk capaci-  
tors.  
Basic ballast electrical characteristics  
Input voltage: 120 or 230 Vac by input connec-  
tions change  
Switching frequency: 50kHz  
Average dc line voltage range: Vdc from 260 to 355  
Nominal supply current: 0.17A rms @ 310 Vdc  
Nominal output power: 17W  
Minimum ignition voltage: 700V peak @ 260 Vdc  
Nominal preheat current: 0.45 Arms during 0.8s  
@ 310 Vdc  
Figure 23. CFL ballast diagram for a 18W  
CFD18T/E lamp with 120/230 Vac inputs.  
Figure 23.  
Q1  
STD4NK50  
R9  
180K  
1/4W  
C4100nF 50V  
R8  
120K  
1/2W  
VS  
BOOT  
HVG  
OUT  
C2  
47µF  
250V  
RF  
R10 10K  
1/4W  
R4  
27K  
R2 22 1/4W  
R3 22 1/4W  
L1=2.4mH  
4 x 1N4006  
D7  
L6569  
1/4W  
D4  
CF  
R5 100K  
1/2W  
LVG  
Q2  
STD4NK50  
C7  
8.2nF  
630V  
(*)  
220V  
C1  
560pF  
50V  
GND  
D6  
D5  
D8  
1N4148  
N
C5  
47µF  
250V  
C3  
4.7µF  
25V  
C9 470pF 630V  
(*)  
R7  
180K  
1/4W  
C6  
100nF  
250V  
C8  
8.2nF  
630V  
(*)  
R1 15 1W  
RV1  
PTC 150  
350V  
R6 47 1/4W  
110V  
D1  
BYW100-100  
ZPD 18V  
D2  
CFL LAMP  
SYLVANIA DELUX T/E 18W  
L1=2.4mH core TH LCC E2006-B4 Ref also VOGH 575 0409200 2.4mH  
C7-C8=PS8n2J H3 630-2A TH  
D96IN419C  
D3 BYW100-100  
(*) Polypropylene, Capacitors 630V rated VL  
11/14  
AN880 APPLICATION NOTE  
Figure 24: PCB Layout of the board.  
Comp.  
Side  
Copper  
Side  
Figure 25: PCB component placement diagram.  
The resonant choke  
Customization of the board  
The inductance of the choke is 2.4 mH with a  
minimum saturation current of 0.65 A. In the prac-  
tical example it has been done with:  
Core: Thomson LCC E2006 material B4;  
Air gap: 2 spacers of 0.4 mm each (total 0.8 mm);  
AL = 75 nH;  
Some flexibility is added to the board to extend its  
evaluation. The MOSFETs have two foot prints to  
mount either I-PAK or TO220 packages. And two  
choke footprints are also avalaible for E1905A  
and E2006A magnetic cores.  
Bobbin: HC2006BA-06;  
Number of turns: 175;  
Measured saturation current: 1 A peak @ 25 °C;  
12/14  
AN880 APPLICATION NOTE  
plies the lamp current during the lower MOS turn  
off. To avoid any cross conduction its capacitance  
is limited by the driver dead time TD (see figure  
26). Hence the capacitive supply current IC is also  
limited.  
APPENDIX B: Rating of the capacitive supply  
with the L6569 driver  
The supply is made with the snubber and a start  
up resistor RS.  
T
D
I
L
A snubber circuit is used to minimize the MOS-  
FETs dissipation. It also achieves a non dissipa-  
tive supply as shown on figure 10.  
C <  
VDC  
ICAV = C VDC FSW < IL TD FSW  
The MOSFETs gate charge, the driver consump-  
tion, the oscillator, and the shunt regulator, define  
the circuit consumption. We can estimate this  
Where IL is the peak lamp current, and FSW the  
switching frequency.  
current is IS AV  
ISAV > 2 IG + IQS + IOSC + IREG  
VS  
:
=
For a ballast such as a CFL one this circuit sup-  
plies easily the required current. For instance with  
a CF18DT lamp ( IL > 230 mA) the capacitor is  
1nF on 120Vac line, 470 pF on 230 Vac line. At  
50 kHz the average capacitive current is 6 mA in  
both cases.  
= 2 QG fsw + IQS  
+
+ IREG  
RF  
2
Where QG the MOSFET gate charge  
IQS the driver supply current  
VS the supply voltage  
RF the oscillator resistor and VS the driver  
supply voltage  
Figure 26: Cross conduction of the snubber  
capacitor with the upper MOSFET:  
capacitor current and voltage  
waveforms.  
IREG the shunt regulator current.  
When V is lower than the UVLO threshold UUVLO, the  
S
driver is only consuming. Its current must be mini-  
mal to reduce the dissipation of the resistor RS.  
The L6569 has a 150 µA start up current, and the  
maximum resistance is 2Mfor a 230Vac line ap-  
plication.  
TD  
V
HVG + VOUT  
We can also reduce the resistor value to get a  
faster start up time TS.  
GND  
IC  
GND  
GND  
RF  
RS CS UUVLO  
TS =  
VDC  
200 ns/dv ; 50 V/dv ; 0.1 A/dv  
Where CS is the supply capacitor, and VDC the  
line voltage.  
When the timer oscillates, the capacitor C sup-  
13/14  
AN880 APPLICATION NOTE  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
14/14  

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