DSA2507 [PANASONIC]
Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN;
| 型号： | DSA2507 |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：447K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA2507
Silicon PNP epitaxial planar type
For low frequency amplification
Features
Package
ꢀCode
Low collector-emitter saturation voltage VCE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Mini3-G3-B
ꢀPin Name
1. Base
Packaging
2. Emitter
3. Collector
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: B4
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
–30
Unit
V
–20
V
–5
V
–1.5
A
Peak collector current
ICP
–5
A
Collector power dissipation *
Junction temperature
PC
400
mW
°C
°C
Tj
150
Storage temperature
T
stg
–55 to +150
Note) : Printed circuit board: Copper foil area of 2.25 cm2 or more, and the board
*
thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
–30
–20
–5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Transition frequency
VCBO IC = –10 mA, IE = 0
VCEO IC = –1 mA, IB = 0
VEBO IE = –10 mA, IC = 0
V
V
hFE
VCE = –2 V, IC = –100 mA
160
560
VCE(sat) IC = –500 mA, IB = –25 mA
–50
220
–150
mV
MHz
fT
VCE = –10 V, IC = –20 mA
Collector output capacitance
Cob
VCB = –10 V, IE = 0, f = 1 MHz
35
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Pulse measurement
*
Publication date: April 2011
Ver. BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA2507
PC T
IC VCE
hFE IC
a
−2000
−1500
−1000
−500
600
500
400
300
200
100
0
500
400
Ta = 25°C
V
CE = −2 V
Ta = 85°C
I
B = −8 mA
− 6 mA
− 4 m
A
A
25°C
300
200
−30°C
− 2 m
100
00
−2
−4
−6
−8 −10 −12
0
0
−1
−10
−102
−
103
−
104
40
80
120
160
200
(
)
Ambient temperature Ta °C
Collector-emitter voltage VCE (V)
Collector current IC (mA)
VCE(sat) IC
IC VBE
Cob VCB
−1
−10−1
−10−2
100
80
60
40
20
0
−1500
−1000
−500
IC / IB = 20
IE = 0
f =1 MHz
V
CE = −2 V
Ta = 25°C
Ta = 85°C
25°C
Ta = 85°C
−30°C
−30°C
25°C
−10−3
−1
−10
−102
−103
−104
00
− 0.4
− 0.8
−1.2
−1
−10
−102
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector-base voltage VCB (V)
fT IC
300
VCE = −10 V
a = 25°C
T
250
200
150
100
50
0
1
−
10−
−1
−10
−
102
Collector current IC (mA)
Ver. BED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA2507
Mini3-G3-B
Unit: mm
+0.10
−0.05
0.40
+0.10
−0.06
0.16
3
2
1
(0.95)
(0.95)
1.9 ±0.1
+0.20
−0.05
2.90
Ver. BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
相关型号：
DSA250700L
Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, MINI3-G3-B, 3 PIN
PANASONIC
DSA2G01
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN
PANASONIC
DSA2G0100L
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PIN
PANASONIC
DSA2G01B
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN
PANASONIC
DSA2G01B0L
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN
PANASONIC
DSA2G01C
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN
PANASONIC
DSA2G01C0L
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明