DRA3114T0L [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PIN;
DRA3114T0L
型号: DRA3114T0L
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PIN

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中文:  中文翻译
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Doc No. TT4-EA-11668  
Revision. 2  
Transistors with Built-in Resistor  
DRA3114T0L  
DRA3114T0L  
Silicon PNP epitaxial planar type  
Unit: mm  
For digital circuits  
Complementary to DRC3114T  
DRA9114T in SSSMini3 type package  
1.2  
0.3  
0.13  
3
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
0.2  
0.52  
Marking Symbol:  
Packaging  
LD  
(0.4) (0.4)  
0.8  
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
SSSMini3-F2-B  
SC-105AA  
Absolute Maximum Ratings Ta = 25 C  
Code  
SOT-723  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Total power dissipation  
Junction temperature  
Symbol  
VCBO  
VCEO  
IC  
Rating  
-50  
-50  
-100  
100  
Unit  
V
V
mA  
mW  
°C  
Internal Connection  
C
PT  
Tj  
R1  
B
150  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
-40 to +85  
-55 to +150  
°C  
°C  
E
Resistance  
value  
10  
R1  
k  
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VCBO IC = -10 μA, IE = 0  
VCEO IC = -2 mA, IB = 0  
ICBO  
ICEO  
IEBO  
hFE  
Conditions  
Min Typ Max  
-50  
-50  
Unit  
V
V
μA  
μA  
mA  
-
V
V
V
k  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCB = -50 V, IE = 0  
VCE = -50 V, IB = 0  
VEB = -6 V, IC = 0  
-0.1  
-0.5  
-0.01  
VCE = -10 V, IC = -5 mA  
160  
-1.2  
460  
-0.25  
Collector-emitter saturation voltage  
VCE(sat) IC = -10 mA, IB = -0.5 mA  
Vi(on) VCE = -0.2 V, IC = -5 mA  
Vi(off) VCE = -5 V, IC = -100 μA  
R1  
Input voltage  
-0.4  
Input resistance  
-30% 10 +30%  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note)1.  
Page 1 of 3  
Established : 2009-10-23  
Revised : 2014-02-07  
Doc No. TT4-EA-11668  
Revision. 2  
Transistors with Built-in Resistor  
DRA3114T0L  
Technical Data ( reference )  
PT - Ta  
IC - VCE  
125  
100  
75  
50  
25  
0
-0.12  
Ta = 25  
IB = -800 μA  
-700 μA  
-600 μA  
-0.1  
-0.08  
-0.06  
-0.04  
-0.02  
-0  
-500 μA  
-400 μA  
-300 μA  
-200 μA  
-100 μA  
0
20 40 60 80 100 120 140 160 180 200  
-0  
-2  
-4  
-6  
-8  
-10  
-12  
Ambient temperature Ta ()  
Collector-emitter voltage VCE (V)  
VCE(sat) - IC  
hFE - IC  
-10  
-1  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
IC/IB = 20  
VCE = -10 V  
Ta = 85  
25 ℃  
25 ℃  
Ta = 85 ℃  
-0.1  
-40 ℃  
-40 ℃  
0
-0.01  
-0.0001  
-0.001  
-0.01  
-0.1  
-0.0001  
-0.001  
-0.01  
-0.1  
Collector current IC (A)  
Collector current IC (A)  
Io - VIN  
VIN - Io  
-1.0E-02  
-1.0E-03  
-1.0E-04  
-1.0E-05  
-1.0E-06  
-100  
Vo = -5 V  
Ta = 85 ℃  
Vo = -0.2 V  
-10  
-1  
25 ℃  
Ta = -40 ℃  
25 ℃  
-40 ℃  
85 ℃  
-0.1  
-0  
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-0.0001  
-0.001  
-0.01  
-0.1  
Input voltage VIN (V)  
Output current Io (A)  
Page 2 of 3  
Established : 2009-10-23  
Revised : 2014-02-07  
Doc No. TT4-EA-11668  
Revision. 2  
Transistors with Built-in Resistor  
DRA3114T0L  
SSSMini3-F2-B  
Unit: mm  
1.20±0.05  
0.30+-0.052  
0.13+-0.052  
3
1
2
0.20+-0.052  
(0.4) (0.4)  
0.80±0.05  
(5°)  
Land Pattern (Reference) (Unit: mm)  
0.45  
0.35  
0.35  
0.4  
0.4  
Page 3 of 3  
Established : 2009-10-23  
Revised : 2014-02-07  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications  
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,  
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of  
the products may directly jeopardize life or harm the human body.  
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with  
your using the products described in this book for any special application, unless our company agrees to your using the products in  
this book for any special application.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.  
20100202  

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