DRA3115E [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN;
DRA3115E
型号: DRA3115E
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN

光电二极管 晶体管
文件: 总4页 (文件大小:480K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
This product complies with the RoHS Directive (EU 2002/95/EC).  
DRA3115E  
Silicon PNP epitaxial planar type  
For digital circuits  
Complementary to DRC3115E  
DRA9115E in SSSMini3 type package  
Package  
Features  
Code  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SSSMini3-F2-B  
Pin Name  
1: Base  
2: Emitter  
Packaging  
3: Collector  
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
Marking Symbol: LN  
Internal Connection  
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
C
E
R1  
B
–50  
V
R2  
–100  
mA  
mW  
°C  
Total power dissipation  
PT  
100  
R1  
R2  
100 kΩ  
100 kΩ  
Resistance value  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.1  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
80  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–5.7  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.8  
+30%  
1.2  
V
Input resistance  
R1  
–30%  
0.8  
100  
1.0  
kΩ  
Resistance ratio  
R1 / R2  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: December 2010  
Ver. BED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
DRA3115E  
PT T  
IC VCE  
hFE IC  
a
150  
125  
100  
120  
100  
80  
60  
40  
20  
0
300  
250  
200  
150  
100  
50  
V
CE = −10 V  
Ta = 25°C  
Ta = 85°C  
I
B = −800 µA  
700 µA  
600 µA  
500 µA  
25°C  
30°C  
400 µA  
300 µA  
75  
50  
25  
200 µA  
100 µA  
0
0
0
40  
80  
120  
160  
200  
0
2  
4  
6  
8 10 12  
0.1  
1  
10  
100  
(
)
Ambient temperature Ta °C  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
VCE(sat) IC  
IO VIN  
VIN IO  
10  
1  
100  
10  
1  
IC / IB = 20  
VO = 5 V  
V
O = − 0.2 V  
Ta = 85°C  
25°C  
10  
1  
Ta = −30°C  
101  
102  
103  
25°C  
85°C  
Ta = 85°C  
30°C  
30°C  
0.1  
25°C  
1  
0.1  
0.01  
0
0.5  
1.0  
1.5  
2.0  
0.1  
1  
10  
100  
0.1  
10  
−100  
Output current IO (mA)  
Collector current IC (mA)  
(V)  
Input voltage VIN  
Ver. BED  
2
This product complies with the RoHS Directive (EU 2002/95/EC).  
DRA3115E  
SSSMini3-F2-B  
Unit: mm  
1.20 ±0.05  
0.30 +00..0025  
3
2
1
0.13 +00..0025  
0.20 +00..0025  
(0.4)  
(0.4)  
0.80 ±0.05  
(5°)  
Ver. BED  
3
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications  
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,  
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of  
the products may directly jeopardize life or harm the human body.  
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with  
your using the products described in this book for any special application, unless our company agrees to your using the products in  
this book for any special application.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.  
20100202  

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