DMC206E2 [PANASONIC]
RF Small Signal Bipolar Transistor, 0.015A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, 6 PIN;
| 型号： | DMC206E2 |
| 厂家： | 
PANASONIC |
| 描述： | RF Small Signal Bipolar Transistor, 0.015A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, 6 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
DMC206E2
Silicon NPN epitaxial planar type
For high-frequency amplification
DMC506E2 in Mini6 type package
Features
ꢀPackage
High transition frequency fT
ꢀCode
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Mini6-G4-B
ꢀPin Name
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
ꢀBasic Part Number
6: Collector (Tr1)
Dual DSC2G02 (Individual)
ꢀMarking Symbol: D2
ꢀInternal Connection
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
(C1) (B1) (C2)
ꢀAbsolute Maximum Ratings T = 25°C
a
6
5
4
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
Rating
Unit
V
Tr2
Tr1
VCBO
VCEO
VEBO
IC
30
20
V
1
2
3
3
15
V
(E1) (E2) (B2)
mA
mW
°C
°C
Total power dissipation
PT
300
Junction temperature
Tj
150
Storage temperature
T
stg
–55 to +150
ꢀElectrical Characteristics T = 25°C±3°C
a
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Base-emitter voltage
Symbol
Conditions
Min
30
3
Typ
Max
Unit
V
VCBO IC = 10 µA, IE = 0
VEBO IE = 10 µA, IC = 0
V
VBE
hFE
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
0.72
0.99
V
Forward current transfer ratio
65
260
hFE
(Small/Large)
hFE ratio *
VCE = 6 V, IC = 1 mA
0.50
450
Transition frequency
Reverse transfer capacitance(Common emitter)
Power gain
fT
VCE = 6 V, IC = 1 mA
650
0.6
24
MHz
pF
Cre
PG
NF
VCE = 6 V, IC = 1 mA, f = 10.7 MHz
VCE = 6 V, IC = 1 mA, f = 100 MHz
VCE = 6 V, IC = 1 mA, f = 100 MHz
dB
Noise figure
3.3
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Ratio between 2 elements
*
Publication date: July 2010
ZJJ00670AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMC206E2
PT T
IC VCE
hFE IC
a
350
300
250
200
150
100
50
20
16
12
8
200
160
Ta = 25°C
V
CE = 6 V
Ta = 85°C
110 µA
100 µA
IB = 120 µA
25°C
120
80
90 µA
−30°C
80 µA
70 µA
60 µA
50 µA
40 µA
30 µA
4
40
0
0
0
0
10−1
1
10
102
40
80
120
160
200
0
2
4
6
8
10
12
(
)
Ambient temperature Ta °C
Collector-emitter voltage VCE (V)
Collector current IC (mA)
VCE(sat) IC
IC VBE
Cob VCB
2.0
1.6
1.2
20
15
10
1
IC / IB = 10
IE = 0
f = 1 MHz
V
CE = 6 V
Ta = 25°C
25°C
Ta = 85°C
−30°C
10
5
Ta = 85°C
−30°C
0.8
0.4
0
25°C
10−1
10−2
10−1
0
102
1
10
100
0
0.2 0.4 0.6 0.8 1.0 1.2
1
10
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector-base voltage VCB (V)
fT IC
1600
1200
800
400
0
VCE = 6 V
Ta = 25°C
10−1
1
10
102
Collector current IC (mA)
ZJJ00670AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
DMC206E2
Mini6-G4-B
Unit: mm
2.90 +−00..0250
0.50 +−00..0150
0.30 +−00..0150
0.13 +−00..0025
6
5
4
1
2
3
(0.95)
(0.95)
1.9 ±0.1
8°
ZJJ00670AED
3
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semiconductors described in this book
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20100202
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