DMC2400UV [DIODES]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET;
| 型号： | DMC2400UV |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总10页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC2400UV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage VGS(th) <1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
ESD Protected Gate to 2kV HBM
Lead Free/RoHS Compliant (Note 1)
"Green" Device, Halogan and Antimony Free (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
I
D max
Device
V(BR)DSS
RDS(ON) max
TA = 25°C
0.5Ω @ VGS = 4.5V
0.9Ω @ VGS = 1.8V
1030mA
Q1
20V
740mA
1.0Ω @ VGS = -4.5V
2.0Ω @ VGS = -1.8V
-700mA
Q2
-20V
-460mA
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.003 grams (approximate)
•
•
•
•
•
•
Power management functions
Battery Operated Systems and Solid-State Relays
Load switch
•
D1
G2
S2
SOT563
Q2
Q1
S1
G1
D2
Top View
Bottom View
Equivalent Circuit
ESD PROTECTED TO 2kV
Ordering Information (Note 3)
Part Number
DMC2400UV-7
DMC2400UV-13
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
CA3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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February 2012
© Diodes Incorporated
DMC2400UV
Document number: DS35537 Rev. 6 - 2
DMC2400UV
Maximum Ratings - Q1 N-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
20
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
±12
T
A = 25°C
Steady
State
1030
800
mA
mA
mA
mA
ID
ID
ID
ID
TA = 70°C
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 5) VGS = 1.8V
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
1150
900
t<10s
Steady
State
740
570
TA = 25°C
TA = 70°C
870
700
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
3
A
IDM
IS
Maximum Body Diode continuous Current
800
mA
Maximum Ratings - Q2 P-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
-20
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
±8
TA = 25°C
TA = 70°C
Steady
State
-700
-550
mA
mA
mA
mA
ID
ID
ID
ID
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -1.8V
TA = 25°C
TA = 70°C
TA = 25°C
-820
-640
t<10s
Steady
State
-460
-350
TA = 70°C
T
T
A = 25°C
A = 70°C
-550
-420
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
-2
A
IDM
IS
Maximum Body Diode continuous Current
-800
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
PD
Value
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Total Power Dissipation (Note 4)
0.45
281
210
1
129
97
Steady state
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Rθ
JA
t<10s
PD
Rθ
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
JA
-55 to +150
TJ, TSTG
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© Diodes Incorporated
DMC2400UV
Document number: DS35537 Rev. 6 - 2
DMC2400UV
Electrical Characteristics - Q1 N-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
-
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
100
±1
nA
Zero Gate Voltage Drain Current TJ = 25°C
VDS = 20V, VGS = 0V
VGS = ±5V, VDS = 0V
-
Gate-Source Leakage
IGSS
μA
-
±4.0
V
GS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.5
-
0.9
0.48
0.5
0.7
0.9
1.5
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
-
-
-
-
-
0.3
0.35
0.45
0.55
0.65
2
V
V
V
V
V
GS = 5.0V, ID = 200mA
GS = 4.5V, ID = 200mA
GS = 2.5V, ID = 200mA
GS = 1.8V, ID = 100mA
GS = 1.5V, ID = 50mA
Ω
Static Drain-Source On-Resistance
RDS (ON)
VGS = 1.2V, ID = 1mA
VDS = 3V, ID = 200mA
VGS = 0V, IS = 500mA,
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
1.4
0.7
-
S
V
|Yfs|
VSD
1.2
-
-
-
-
-
-
-
-
-
-
-
37.1
6.5
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Ω
4.8
Reverse Transfer Capacitance
Gate Resistance
68
VDS = 0V, VGS = 0V,
0.5
Total Gate Charge
Qg
VGS = 4.5V, VDS = 10V,
ID = 250mA
0.07
0.1
Gate-Source Charge
Gate-Drain Charge
nC
Qgs
Qgd
tD(on)
tr
4.06
7.28
13.74
10.54
Turn-On Delay Time
V
DD = 10V, VGS = 4.5V,
Turn-On Rise Time
ns
RL = 47ꢀ, RG = 10ꢀ,
Turn-Off Delay Time
tD(off)
tf
I
D = 200mA
Turn-Off Fall Time
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2.0
1.5
1.5
1.0
V
= 4.5V
GS
V
= 2.5V
V
= 5V
GS
DS
V
= 2.0V
GS
V
= 1.8V
GS
1.0
0.5
T = 150°C
A
V
V
= 1.5V
= 1.2V
GS
0.5
0
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
GS
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
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DMC2400UV
Document number: DS35537 Rev. 6 - 2
DMC2400UV
2.0
1.6
0.8
0.6
0.4
V
= 4.5V
GS
T
= 150°C
A
V
= 1.5V
GS
1.2
0.8
T
= 125°C
= 85°C
A
T
A
T
= 25°C
A
V
= 1.8V
GS
V
= 2.5V
GS
0.2
0
T
= -55°C
A
0.4
0
V
= 4.5V
GS
V
= 5.0V
GS
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
0.6
1.6
1.4
V
= 4.5V
GS
I
= 1.0A
D
V
= 2.5.V
GS
I
= 500mA
D
1.2
1.0
V
= 2.5V
0.4
GS
I
= 500mA
D
0.2
0
V
= 4.5V
GS
0.8
0.6
I
= 1.0A
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
1.6
1.2
1.2
1.0
0.8
0.6
0.4
T
= 25°C
A
I
= 1mA
D
I
= 250µA
D
0.8
0.4
0
0.2
0
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMC2400UV
Document number: DS35537 Rev. 6 - 2
DMC2400UV
60
50
40
1,000
100
T
T
= 150°C
A
f = 1MHz
= 125°C
A
C
iss
10
30
20
T
= 85°C
A
T
= 25°C
= -55°C
A
1
T
A
10
0
C
oss
C
rss
0.1
0
5
10
15
20
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
5
4
3
10
1
P
= 10µs
P
= 100µs
W
W
R
DS(on)
V
= 10V
Limited
DS
I
= 250mA
D
DC
= 10s
P
W
P
= 1s
W
0.1
P
= 100ms
W
P
= 10ms
W
2
P
= 1ms
W
0.01
1
0
0.001
0.01
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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© Diodes Incorporated
DMC2400UV
Document number: DS35537 Rev. 6 - 2
DMC2400UV
Electrical Characteristics - Q2 P-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = -1mA
-
-
-
-100
±1.0
±5.0
nA
Zero Gate Voltage Drain Current TJ = 25°C
VDS = -20V, VGS = 0V
VGS = ±5V, VDS = 0V
Gate-Source Leakage
IGSS
μA
V
GS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.5
-
-
-1.0
0.97
1.0
1.5
2.0
3.0
-
V
VGS(th)
VDS = VGS, ID = -250μA
0.67
0.7
0.9
1.2
1.5
5
V
V
V
V
GS = -5V, ID = -100mA
GS = -4.5V, ID = -100mA
GS = -2.5V, ID = -80mA
GS = -1.8V, ID = -40mA
-
-
-
-
-
-
Ω
Static Drain-Source On-Resistance
RDS (ON)
VGS = -1.5V, ID = -30mA
VGS = -1.2V, ID = -1mA
VDS = -3V, ID = -100mA
VGS = 0V, IS = -330mA,
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
0.7
-0.75
-
S
V
|Yfs|
VSD
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
46.1
7.2
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
4.9
Reverse Transfer Capacitance
Gate Resistance
14.3
0.5
Ω
VDS = 0V, VGS = 0V,
Total Gate Charge VGS = -4.5V
Total Gate Charge VGS = -10V
Gate-Source Charge
Qg
0.85
0.09
0.09
8.5
Qg
VDS = -10V, ID = -250mA
nC
ns
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
V
DD = -3V, VGS = -2.5V,
RL = 300ꢀ, RG = 25ꢀ,
D = -100mA
4.3
Turn-On Rise Time
20.2
19.2
Turn-Off Delay Time
tD(off)
tf
I
Turn-Off Fall Time
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
1.0
0.8
1.0
0.8
0.6
0.4
0.6
0.4
0.2
0
0.2
0
T
= 125°C
A
0
1
2
3
4
5
0
1
2
3
4
-VGS, GATE SOURCE VOLTAGE(V)
Fig. 14 Typical Transfer Characteristics
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
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DMC2400UV
Document number: DS35537 Rev. 6 - 2
DMC2400UV
2.0
1.8
1.6
1.4
V
= -1.8V
GS
1.2
T
= 150°C
A
1.0
0.8
V
= -2.5V
GS
0.6
0.4
V
= -4.5V
GS
0.2
0
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
2.0
1.5
1.4
1.2
1.0
1.0
0.5
0
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 17 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 18 On-Resistance vs.Temperature
0
25
50
75 100 125 150
°
C)
°
C)
1.0
1.0
0.8
0.6
I
= 300μA
0.8
D
I
= 250μA
T
= 25°C
D
0.6
A
0.4
0.2
0
0.4
0.2
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
°
C)
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 20 Diode Forward Voltage vs. Current
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Document number: DS35537 Rev. 6 - 2
DMC2400UV
80
60
1,000
100
10
f = 1MHz
T
= 150
°
C
A
T
= 125°C
A
C
iss
40
T
= 85°C
A
T
= 25°C
A
1
20
0
C
C
oss
rss
0.1
0
4
8
12
16
20
0
5
10
15
20
-VDS, DRAIN-SOURCE VOLTAGE(V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Drain-Source Leakage Current vs. Voltage
10
Fig. 21 Typical Junction Capacitance
8
7
P
= 100µs
P
= 10µs
W
W
V
= -10V
DS
1
R
DS(on)
Limited
6
5
4
3
I
= -250mA
D
DC
= 10s
P
W
P
= 1s
W
0.1
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.01
2
1
0
0.001
0.01
0.1
1
10
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Qg, TOTAL GATE CHARGE (nC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 24 SOA, Safe Operation Area
Fig. 23 Gate-Charge Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θ
JA
R
= 275°C/W
θ
JA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 25 Transient Thermal Response
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Document number: DS35537 Rev. 6 - 2
DMC2400UV
Package Outline Dimensions
A
SOT563
Dim Min Max
Typ
B
C
A
B
C
D
G
H
K
L
0.15 0.30 0.20
1.10 1.25 1.20
1.55 1.70 1.60
D
G
-
-
0.50
0.90 1.10 1.00
1.50 1.70 1.60
0.55 0.60 0.60
0.10 0.30 0.20
0.10 0.18 0.11
M
K
M
All Dimensions in mm
H
L
Suggested Pad Layout
C2
C2
Dimensions Value (in mm)
Z
G
2.2
1.2
X
Y
0.375
0.5
C1
G
Z
C1
C2
1.7
0.5
Y
X
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© Diodes Incorporated
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Document number: DS35537 Rev. 6 - 2
DMC2400UV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
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www.diodes.com
February 2012
© Diodes Incorporated
DMC2400UV
Document number: DS35537 Rev. 6 - 2
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