AN26218A [PANASONIC]

UMTS triple band LNA-IC; UMTS三频LNA -IC
AN26218A
型号: AN26218A
厂家: PANASONIC    PANASONIC
描述:

UMTS triple band LNA-IC
UMTS三频LNA -IC

电信集成电路
文件: 总23页 (文件大小:443K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
Part No.  
AN26218A  
Package Code No.  
XLGA011-W-1216AKA  
Publication date: May 2012  
Ver. AEB  
1
AN26218A  
Contents  
„ Overview …………………………………………………………………………………………………………….  
„ Features …………………………………………………………………………………………………………….  
„ Applications …………………………………………………………………………………………………………  
„ Package …………………………………………………………………………………………………………….  
„ Type ………………………………………………………………………………………………………………….  
3
3
3
3
3
„ Application Circuit Example (Block Diagram)……………………………………………………………………. 4  
„ Pin Descriptions …………………………………………………………………………………………………….  
„ Absolute Maximum Ratings ……………………………………………………………………………………….  
„ Operating Supply Voltage Range …………….………………………………………………………………….  
„ Allowable Current and Voltage Range…………………………………………………………………………….  
„ Electrical Characteristics ………………………………………………………………………………………….  
5
6
6
7
8
„ Electrical Characteristics (Referred design parameters) ………….…………………………………………. 12  
„ Control Pins Mode Table ……………………………………………….…………………………………………. 18  
„ Technical Data ……………………………………………………………………………………………………. 19  
y I/O block circuit diagrams and pin function descriptions ………………………………………………………. 19  
y PD Ta diagram …………………………………………………………………………………………………. 21  
„ Usage Notes ………………………………………….……………………………………………………………. 22  
Ver. AEB  
2
AN26218A  
AN26218A  
UMTS triple band LNA-IC  
„ Overview  
y AN26218A is LNA-IC for 800 MHz / 1.7 GHz / 2.1 GHz Band Applications.  
y Realizing high performance by using 0.18 μm SiGeC Bi-CMOS process(fT = 90 GHz, fmax = 140 GHz).  
y Each band is selectable and High/Low Gain-mode is changeable, controlled by integrated CMOS logic circuit.  
y Achieving miniaturization by using small size package.  
„ Features  
y Low voltage operation  
+2.8 V typ.  
y Low current consumption 3.3 mA typ.  
(High-Gain mode)  
(Low-Gain mode)  
800 MHz / 1.7 GHz (Low-Gain mode)  
11 μA typ.  
25 μA typ.  
2.1 GHz  
y High gain(Gain)  
16.7 dB typ.  
16.7 dB typ.  
16.5 dB typ.  
1.75 dB typ.  
1.80 dB typ.  
1.65 dB typ.  
0.0 dBm typ.  
fRX = 2140 MHz  
fRX = 884.5 MHz  
fRX = 1862.5 MHz  
fRX = 2140 MHz  
fRX = 884.5 MHz  
fRX = 1862.5 MHz  
fRX = 2140 MHz  
(High-Gain mode)  
(High-Gain mode)  
(High-Gain mode)  
(High-Gain mode)  
(High-Gain mode)  
(High-Gain mode)  
(High-Gain mode)  
(High-Gain mode)  
(High-Gain mode)  
y Low noise figure(NF)  
y Low distortion  
(IIP3 +10 MHz offset)  
–5.0 dBm typ. fRX = 884.5 MHz  
–3.0 dBm typ. fRX = 1862.5 MHz  
y Small package(WLCSP)  
„ Applications  
y UMTS triple-band handset  
„ Package  
y 11 pin Wafer level chip size package (WLCSP)  
Size : 1.16 mm × 1.56 mm (0.4 mm pitch)  
„ Type  
y Bi-CMOS IC  
Ver. AEB  
3
AN26218A  
„ Application Circuit Example (Block Diagram)  
(Top View)  
1.7GOUT  
2.1GOUT  
800MOUT  
CNT1  
(Bandsel1)  
L4  
L5  
L6  
C7  
A1  
B1  
A2  
B2  
C2  
A3  
A4  
B4  
C4  
VCC  
CNT2  
(Bandsel2)  
C1  
C1  
C3  
C3  
C5  
L3  
CNT3  
(Gain cnt)  
L1  
L2  
C2  
C4  
C6  
L7  
1.7GIN  
2.1GIN  
800MIN  
Notes) y This application circuit is an example. The operation of mass production set is not guaranteed. You should perform enough evaluation and  
verification on the design of mass production set. You are fully responsible for the incorporation of the above application circuit and  
information in the design of your equipment.  
y This block diagram is for explaining functions. Part of the block diagram may be omitted, or it may be simplified.  
y External components : See page 29.  
Ver. AEB  
4
AN26218A  
„ Pin Descriptions  
Pin No.  
A1  
Pin name  
Type  
Input  
Description  
CNT1  
OUT1  
OUT2  
OUT3  
VCC  
Band Selective SW1  
1.7 GHz RF Output  
2.1 GHz RF Output  
800 MHz RF Output  
VCC  
A2  
Output  
Output  
Output  
Power Supply  
Ground  
Input  
A3  
A4  
B1  
B2  
GND  
CNT2  
IN1  
GND  
B4  
Band Selective SW2  
1.7 GHz RF Input  
C1  
Input  
C2  
CNT3  
IN2  
Input  
High-Gain / Low-Gain Selective SW  
2.1 GHz RF Input  
C3  
Input  
C4  
IN3  
Input  
800 MHz RF Input  
Ver. AEB  
5
AN26218A  
„ Absolute Maximum Ratings  
Note) Absolute maximum ratings are limit values which do not result in damages to this IC, and IC operation is not guaranteed at these limit values.  
A No.  
Parameter  
Symbol  
VCC  
ICC  
Rating  
3.6  
Unit  
V
Notes  
*1  
1
2
3
4
5
Supply voltage  
Supply current  
20  
mA  
mW  
°C  
Power dissipation  
PD  
50.8  
*2  
Operating ambient temperature  
Storage temperature  
Topr  
–30 to +85  
–55 to +125  
*3  
Tstg  
°C  
*3  
Notes)*1 : The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.  
*2 : The power dissipation shown is the value at Ta = 85°C for the independent (unmounted) IC package without a heat sink.  
When using this IC, refer to the y PD – Ta diagram in the „ Technical Data and design the heat radiation with sufficient margin so that the  
allowable value might not be exceeded based on the conditions of power supply voltage, load, and ambient temperature.  
*3 : Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for Ta = 25°C.  
„ Operating Supply Voltage Range  
Parameter  
Supply voltage range  
Symbol  
Range  
Unit  
Notes  
VCC  
2.7 to 2.875  
V
*1  
Note) *1 :The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.  
Ver. AEB  
6
AN26218A  
„ Allowable Current and Voltage Range  
Notes) y Allowable current and voltage ranges are limit ranges which do not result in damages to this IC, and IC operation is not guaranteed within  
these limit ranges.  
y Voltage values, unless otherwise specified, are with respect to GND.  
y Do not apply external currents or voltages to any pin not specifically mentioned.  
Pin No.  
A1  
Pin name  
CNT1  
Rating  
– 0.3 to (VCC + 0.3)  
– 0.3 to (VCC + 0.3)  
– 0.3 to (VCC + 0.3)  
– 0.3 to (VCC + 0.3)  
– 0.3 to (VCC + 0.3)  
Unit  
V
Notes  
*2  
A2  
OUT1  
OUT2  
OUT3  
CNT2  
IN1  
V
*2  
A3  
V
*2  
A4  
V
*2  
B4  
V
*2  
C1  
V
*1  
C2  
CNT3  
IN2  
– 0.3 to (VCC + 0.3)  
V
*2  
C3  
V
*1  
C4  
IN3  
V
*1  
Notes) *1 : Do not apply more than 0 dBm at high gain mode (5 dBm at low gain mode) to RF input.  
This is a RF signal input pin. Do not apply DC.  
*2 : (VCC + 0.3) V must not be exceeded 3.6 V.  
Ver. AEB  
7
AN26218A  
„ Electrical Characteristics at VCC = 2.80 V  
Note) All parameters are specified under Ta = 25°C 2°C unless otherwise specified.  
Limits  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min  
Typ Max  
DC electrical characteristics  
VCC current at 2.1 GHz ,  
High-Gain mode.  
No input signal.  
DC-1 Circuit current HG (2.1 GHz)  
IccHSa  
IccHSb  
IccHSc  
IccLSa  
IccLSb  
IccLSc  
3.3  
3.3  
3.3  
11  
4.25  
4.25  
4.25  
35  
mA  
mA  
mA  
μA  
μA  
μA  
VCC current at 800 MHz ,  
DC-2 Circuit current HG (800 MHz)  
DC-3 Circuit current HG (1.7 GHz)  
DC-4 Circuit current LG (2.1 GHz)  
DC-5 Circuit current LG (800 MHz)  
DC-6 Circuit current LG (1.7 GHz)  
High-Gain mode.  
No input signal.  
VCC current at 1.7 GHz ,  
High-Gain mode.  
No input signal.  
VCC current at 2.1 GHz ,  
Low-Gain mode.  
No input signal.  
VCC current at 800 MHz ,  
Low-Gain mode.  
No input signal.  
25  
50  
VCC current at 1.7 GHz ,  
Low-Gain mode.  
No input signal.  
25  
50  
DC-7 SW voltage (High)  
DC-8 SW voltage (Low)  
DC-9 SW Current (High)  
VIHS  
VILS  
IIHS  
2.16  
0
10  
2.875  
0.6  
V
V
Current at SW pin  
VIHS = 2.9 V  
20  
μA  
Current at SW pin  
VILS = 0 V  
DC-10 SW Current (Low)  
IILS  
10  
20  
μA  
Ver. AEB  
8
AN26218A  
„ Electrical Characteristics (continued) VCC = 2.80 V  
Note) All parameters are specified under Ta = 25°C 2°C, fRXa = 2 140 MHz, PRXa = –30 dBm, CW unless otherwise specified.  
Limits  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
2.1 GHz : LNA AC characteristics (High-gain mode / Low-gain mode)  
A-1 Gain Step  
GΔSa  
GΔSa = GHSa – GLSa  
18.2 21.7 23.5  
dB  
2.1 GHz : LNA AC characteristics (High-gain mode)  
f1 = fRXa  
f2 = fRXa – 190 MHz  
PRX1 = –30 dBm  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
A-2 Power gain  
A-3 IIP3  
GHSa  
15.3 16.7 18.0  
dB  
f1 = fRXa + 10 MHz  
IIP3H1Sa f2 = fRXa + 20 MHz  
Input 2 signals (f1, f2)  
–10  
0
dBm  
2.1 GHz : LNA AC characteristics (Low-gain mode)  
f1 = fRXa  
f2 = fRXa – 190 MHz  
PRX1 = –24 dBm  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
A-4 Power gain  
GLSa  
–6.1 –5.0 –4.0  
dB  
Ver. AEB  
9
AN26218A  
„ Electrical Characteristics (continued) VCC = 2.80 V  
Note) All parameters are specified under Ta = 25°C 2°C, fRXb = 881.5 MHz, PRXb = –30 dBm, CW unless otherwise specified.  
Limits  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
800 MHz : LNA AC characteristics (High-gain mode / Low-gain mode)  
B-1 Gain Step  
GΔSb  
GΔSb = GHSb – GLSb  
18.2 22.2 23.8  
dB  
800 MHz : LNA AC characteristics (High-gain mode)  
f1 = fRXb  
f2 = fRXb – 45 MHz  
PRX1 = –30 dBm  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
B-2 Power gain  
B-3 IIP3  
GHSb  
15.5 16.7 18.0  
dB  
f1 = fRXb + 10 MHz  
IIP3H1Sb f2 = fRXb + 20 MHz  
Input 2 signals (f1, f2)  
–10  
–5  
dBm  
800 MHz : LNA AC characteristics (Low-gain mode)  
f1 = fRXb  
f2 = fRXb – 45 MHz  
PRX1 = –24 dBm  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
B-4 Power gain  
GLSb  
–5.9 –5.5 –4.0  
dB  
Ver. AEB  
10  
AN26218A  
„ Electrical Characteristics (continued) VCC = 2.80 V  
Note) All parameters are specified under Ta = 25°C 2°C, fRXc = 1862.5 MHz, PRXc = –30 dBm, CW unless otherwise specified.  
Limits  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
1.7 GHz : LNA AC characteristics (High-gain mode / Low-gain mode)  
C-1 Gain Step  
GΔSc  
GΔSc = GHSc – GLSc  
17.9 21.5 23.7  
dB  
1.7 GHz : LNA AC characteristics (High-gain mode)  
f1 = fRXc  
f2 = fRXc – 95 MHz  
PRX1 = –30 dBm  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
C-2 Power gain  
C-3 IIP3  
GHSc  
15.0 16.5 17.8  
dB  
f1 = fRXc + 10 MHz  
IIP3H1Sc f2 = fRXc + 20 MHz  
Input 2 signals (f1, f2)  
–7.5  
–3  
dBm  
1.7 GHz : LNA AC characteristics (Low-gain mode)  
f1 = fRXc  
f2 = fRXc – 95 MHz  
PRX1 = –24 dBm  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
C-4 Power gain  
GLSc  
–6.0 –5.0 –4.0  
dB  
Ver. AEB  
11  
AN26218A  
„ Electrical Characteristics (Reference values for design) at VCC = 2.8 V  
Notes) y All characteristics are specified under Ta = 25°C 2°C, fRXa = 2110 MHz to 2170 MHz, PRXa = –30 dBm, CW  
y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection.  
If a problem does occur related to these characteristics, we will respond in good faith to user concerns.  
Reference values  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
2.1 GHz : LNA AC characteristics (High-gain mode / Low-gain mode)  
D-1 Gain Step  
GΔa  
GΔa = GHa – GLa  
18.2 21.7 23.5  
dB  
dB  
D-2 In - band gain deviation  
GchΔa  
1.8  
2.1 GHz : LNA AC characteristics (High-gain mode)  
D-3 Input VSWR  
D-4 Output VSWR  
Vswr_inHa  
2.1  
2.3  
Vswr_outHa  
f1 = fRXa  
f2 = fRXa – 190 MHz  
PRX1 = –30 dBm  
PRX2 = –24 dBm  
D-5 Power gain  
D-6 Noise figure  
GHa  
15.3 16.7 18.0  
dB  
dB  
Input 2 signals (f1, f2)  
f1 = fRXa  
f2 = fRXa – 190 MHz  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
NFHa  
1.75 1.95  
f1 = fRXa + 10 MHz  
f2 = fRXa + 20 MHz  
Input 2 signals (f1, f2)  
D-7 IIP3  
IIP3H1a  
Ris_H1a  
–10  
0
dBm  
dB  
2 .1GHz band Output →  
D-8 Reverse isolation  
2 .1GHz band input  
–34  
–30  
f = 1920 to 2170 MHz  
Ver. AEB  
12  
AN26218A  
„ Electrical Characteristics (Reference values for design) (continued) at VCC = 2.8 V  
Notes) y All characteristics are specified under Ta = 25°C 2°C, fRXa = 2110 MHz to 2170 MHz, PRXa = –30 dBm, CW  
y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection.  
If a problem does occur related to these characteristics, we will respond in good faith to user concerns.  
Reference values  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
2.1 GHz : LNA AC characteristics (Low-gain mode)  
D-9 Input VSWR  
Vswr_inLa  
2.1  
2.5  
D-10 Output VSWR  
Vswr_outLa  
f1 = fRXa  
f2 = fRXa – 190 MHz  
PRX1 = –24 dBm  
PRX2 = –24 dBm  
D-11 Power gain  
D-12 Noise figure  
GLa  
–6.1 –5.0 –4.0 dB  
Input 2 signals (f1, f2)  
f1 = fRXa  
f2 = fRXa – 190 MHz  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
NFLa  
2
5
6.8  
dB  
f1 = fRXa + 3.5 MHz  
f2 = fRXa + 6.5 MHz  
PRX1 = –15 dBm  
PRX2 = –15 dBm  
Input 2 signals (f1, f2)  
D-13 IIP3  
IIP3_LGa  
Ris_L1a  
20  
dBm  
2 .1GHz band Output →  
D-14 Reverse isolation  
–6.1 –5.0 –4.0 dB  
2.1 GHz band input  
Ver. AEB  
13  
AN26218A  
„ Electrical Characteristics (Reference values for design) (continued) at VCC = 2.8 V  
Notes) y All characteristics are specified under Ta = 25°C 2°C, fRXb = 869 MHz to 895 MHz, PRXb = –30 dBm, CW  
y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection.  
If a problem does occur related to these characteristics, we will respond in good faith to user concerns.  
Reference values  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
800 MHz : LNA AC characteristics (High-gain mode / Low-gain mode)  
E-1  
E-2  
Gain Step  
GΔb  
GΔb = GHb – GLb  
18.2 22.2 23.8  
dB  
dB  
In - band gain deviation  
GchΔb  
1.8  
800 MHz : LNA AC characteristics (High-gain mode)  
E-3  
E-4  
Input VSWR  
Vswr_inHb  
1.8  
2.0  
Output VSWR  
Vswr_outHb  
f1 = fRXb  
f2 = fRXb – 45 MHz  
PRX1 = –30 dBm  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
E-5  
E-6  
Power gain  
Noise figure  
GHb  
15.5 16.7 18.0  
dB  
f1 = fRXb  
f2 = fRXb – 45 MHz  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
NFHb  
1.8  
–5  
2.0  
dB  
f1 = fRXb + 10 MHz  
f2 = fRXb + 20 MHz  
Input 2 signals (f1, f2)  
E-7  
E-8  
IIP3  
IIP3H1b  
Ris_H2b  
–10  
dBm  
800 MHz band Output →  
Reverse isolation  
800 MHz band input  
–26 –21.5 dB  
f = 830 to 885 MHz  
Ver. AEB  
14  
AN26218A  
„ Electrical Characteristics (Reference values for design) (continued) at VCC = 2.8 V  
Notes) y All characteristics are specified under Ta = 25°C 2°C, fRXb = 869 MHz to 895 MHz, PRXb = –30 dBm, CW  
y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection.  
If a problem does occur related to these characteristics, we will respond in good faith to user concerns.  
Reference values  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
800 MHz : LNA AC characteristics (Low-gain mode)  
E-9  
Input VSWR  
Vswr_inLb  
1.8  
1.8  
E-10 Output VSWR  
Vswr_outLb  
f1 = fRXb  
f2 = fRXb – 45 MHz  
PRX1 = –24 dBm  
PRX2 = –24 dBm  
E-11 Power gain  
GLb  
–5.9 –5.5 –4.2  
dB  
dB  
Input 2 signals (f1, f2)  
f1 = fRXb  
f2 = fRXb – 45 MHz  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
E-12 Noise figure  
NFLb  
2
5.5  
20  
7
f1 = fRXb + 3.5 MHz  
f2 = fRXb + 6.5 MHz  
PRX1 = –15 dBm  
PRX2 = –15 dBm  
Input 2 signals (f1, f2)  
E-13 IIP3  
IIP3_LGb  
Ris_L2b  
dBm  
dB  
800 MHz band Output →  
E-14 Reverse isolation  
–5.9 –5.5 –4.2  
800 MHz band input  
Ver. AEB  
15  
AN26218A  
„ Electrical Characteristics (Reference values for design) (continued) at VCC = 2.8 V  
Notes) y All characteristics are specified under Ta = 25°C 2°C, fRXc = 1844.9 MHz to1879.9 MHz, PRXc = –30 dBm, CW  
y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection.  
If a problem does occur related to these characteristics, we will respond in good faith to user concerns.  
Reference values  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
1.7 GHz : LNA AC characteristics (High-gain mode / Low-gain mode)  
F-1  
F-2  
Gain Step  
GΔc  
GΔc = GHc – GLc  
17.9 21.5 23.7  
dB  
dB  
In - band gain deviation  
GchΔc  
1.8  
1.7 GHz : LNA AC characteristics (High-gain mode)  
F-3  
F-4  
Input VSWR  
Vswr_inHc  
2.0  
2.1  
Output VSWR  
Vswr_outHc  
f1 = fRXc  
f2 = fRXc – 95 MHz  
PRX1 = –30 dBm  
PRX2 = –24 dBm  
F-5  
F-6  
Power gain  
Noise figure  
GHc  
15.0 16.5 17.8  
dB  
dB  
Input 2 signals (f1, f2)  
f1 = fRXc  
f2 = fRXc – 95 MHz  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
NFHc  
1.65 1.85  
f1 = fRXc + 10 MHz  
f2 = fRXc + 20 MHz  
Input 2 signals (f1, f2)  
F-7  
F-8  
IIP3  
IIP3H1c  
Ris_H3c  
–7.5  
–3  
dBm  
dB  
1.7 GHz band Output →  
Reverse isolation  
1.7 GHz band input  
–37  
–32  
f = 1745 to 1880 MHz  
Ver. AEB  
16  
AN26218A  
„ Electrical Characteristics (Reference values for design) (continued) at VCC = 2.8 V  
Notes) y All characteristics are specified under Ta = 25°C 2°C, fRXc = 1844.9 MHz to 1879.9 MHz, PRXc = –30 dBm, CW  
y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection.  
If a problem does occur related to these characteristics, we will respond in good faith to user concerns.  
Reference values  
Notes  
B No.  
Parameter  
Symbol  
Conditions  
Unit  
Min Typ Max  
1.7 GHz : LNA AC characteristics (Low-gain mode)  
F-9  
Input VSWR  
Vswr_inLc  
1.8  
2.4  
F-10 Output VSWR  
Vswr_outLc  
f1 = fRXc  
f2 = fRXc – 95 MHz  
PRX1 = –24 dBm  
PRX2 = –24 dBm  
F-11 Power gain  
GLc  
–6.0 –5.0 –4.0 dB  
Input 2 signals (f1, f2)  
f1 = fRXc  
f2 = fRXc – 95 MHz  
PRX2 = –24 dBm  
Input 2 signals (f1, f2)  
F-12 Noise figure  
NFLc  
5.0  
20  
6.8  
dB  
f1 = fRXc + 3.5 MHz  
f2 = fRXc + 6.5 MHz  
PRX1 = –15 dBm  
PRX2 = –15 dBm  
Input 2 signals (f1, f2)  
F-13 IIP3  
IIP3_LGc  
Ris_L3c  
2.0  
dBm  
1.7 GHz band Output →  
F-14 Reverse isolation  
–6.0 –5.0 –4.0 dB  
1.7 GHz band input  
Ver. AEB  
17  
AN26218A  
„ Control Pins Mode Table  
Note) Control voltage range : See B No. DC-7 / B No. DC-8 at page 8.  
CNT1  
CNT2  
CNT3  
Band1  
(2.1 GHz)  
Band2  
(800 MHz)  
Band3  
(1.7 GHz)  
(Band Select1) (Band Select2) (Gain Control)  
Mode  
(A1)  
(B4)  
(C2)  
High  
Low  
High  
Low  
High  
Low  
High-Gain  
Low-Gain  
Off  
Off  
Off  
Off  
Off  
2.1 GHz High-Gain  
2.1 GHz Low-Gain  
800 MHz High-Gain  
800 MHz Low-Gain  
1.7 GHz High-Gain  
1.7 GHz Low-Gain  
Low  
Low  
High-Gain  
Low-Gain  
Off  
Off  
High  
Low  
Off  
Off  
Off  
High-Gain  
Low-Gain  
Low  
High  
High  
High  
Off  
Off  
Ver. AEB  
18  
AN26218A  
„ Technical Data  
y I/O block circuit diagrams and pin function descriptions  
Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed.  
Pin  
No.  
Voltage  
Internal Circuit  
Description  
2.1 GHz / 800 MHz / 1.7 GHz  
Band selective SW 1  
A1  
0.60 V or less : Low  
2.16 V or more : High  
A1  
GND  
VCC  
A2  
A2  
1.7 GHz LNA RF Output  
GND  
A3  
A4  
B1  
B2  
Refer to A2  
2.1 GHz LNA RF Output  
800 MHz LNA RF Output  
Refer to A2  
2.8 V  
0.0 V  
Voltage supply (VCC  
GND  
)
2.1 GHz / 800 MHz / 1.7 GHz  
Band selective SW 2  
0.60 V or less : Low  
B4  
Refer to A1  
2.16 V or more : High  
Ver. AEB  
19  
AN26218A  
„ Technical Data (continued)  
y I/O block circuit diagrams and pin function descriptions (continued)  
Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed.  
Pin  
No.  
Voltage  
Internal Circuit  
Description  
VCC  
C1  
0.75 V  
1.7 GHz LNA RF Input  
C1  
GND  
High-Gain / Low-Gain selective SW  
0.60 V or less : Low  
C2  
Refer to A1  
2.16 V or more : High  
C3  
C4  
0.75 V  
0.75 V  
Refer to C1  
Refer to C1  
2.1 GHz LNA RF Input  
800 MHz LNA RF Input  
Ver. AEB  
20  
AN26218A  
„ Technical Data  
y PD Ta diagram  
Ver. AEB  
21  
AN26218A  
„ Usage Notes  
y Special attention and precaution in using  
1. This IC is intended to be used for general electronic equipment [UMTS Triple – Band handset].  
Consult our sales staff in advance for information on the following applications:  
x Special applications in which exceptional quality and reliability are required, or if the failure or malfunction of this IC may  
directly jeopardize life or harm the human body.  
x Any applications other than the standard applications intended.  
(1) Space appliance (such as artificial satellite, and rocket)  
(2) Traffic control equipment (such as for automobile, airplane, train, and ship)  
(3) Medical equipment for life support  
(4) Submarine transponder  
(5) Control equipment for power plant  
(6) Disaster prevention and security device  
(7) Weapon  
(8) Others : Applications of which reliability equivalent to (1) to (7) is required  
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with  
your using the IC described in this book for any special application, unless our company agrees to your using the IC in this book  
for any special application.  
2. Pay attention to the direction of LSI. When mounting it in the wrong direction onto the PCB (printed-circuit-board), it might  
smoke or ignite.  
3. Pay attention in the PCB (printed-circuit-board) pattern layout in order to prevent damage due to short circuit between pins. In  
addition, refer to the Pin Description for the pin configuration.  
4. Perform a visual inspection on the PCB before applying power, otherwise damage might happen due to problems such as a solder-  
bridge between the pins of the semiconductor device. Also, perform a full technical verification on the assembly quality, because  
the same damage possibly can happen due to conductive substances, such as solder ball, that adhere to the LSI during  
transportation.  
5. Take notice in the use of this product that it might break or occasionally smoke when an abnormal state occurs such as output pin-  
V
CC short (Power supply fault), output pin-GND short (Ground fault), or output-to-output-pin short (load short) .  
And, safety measures such as an installation of fuses are recommended because the extent of the above-mentioned damage and  
smoke emission will depend on the current capability of the power supply.  
6. When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
7. When using the LSI for new models, verify the safety including the long-term reliability for each product.  
8. When the application system is designed by using this LSI, be sure to confirm notes in this book.  
Be sure to read the notes to descriptions and the usage notes in the book.  
9. Due to unshielded structure of this IC, under exposure of light, function and characteristic of the product cannot be guaranteed.  
During normal operation or even under testing condition, please ensure that IC is not exposed to light.  
10. Basically, chip surface is ground potential. Please design to ensure no contact between chip surface and metal shielding.  
Ver. AEB  
22  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications  
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,  
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of  
the products may directly jeopardize life or harm the human body.  
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with  
your using the products described in this book for any special application, unless our company agrees to your using the products in  
this book for any special application.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.  
20100202  

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