2SK662R [PANASONIC]
Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, SMINI3-G1, SC-70, 3 PIN;
| 型号： | 2SK662R |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, SMINI3-G1, SC-70, 3 PIN |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.1±0.1
■ Features
0.425
1.25±0.1
0.425
● High mutual conductance gm
● Low noise type
1
● S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
3
2
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Symbol
VDSX
VGDO
ID
Ratings
Unit
V
30
−30
V
0.2±0.1
20
mA
mA
mW
°C
Gate current
IG
10
1: Source
2: Drain
3: Gate
Allowable power dissipation
Junction temperature
Storage temperature
PD
150
EIAJ: SC-70
S-Mini Type Package (3-pin)
Tj
125
Tstg
−55 to +125
°C
Marking Symbol (Example): 1O
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
12
Unit
mA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
IDSS
VDS = 10V, VGS = 0
0.5
IGSS
VGS = −30V, VDS = 0
−100
−1.5
VGSC
VDS = 10V, ID = 10µA
− 0.1
VDS = 10V, ID = 0.5mA, f = 1kHz
4
4
Mutual conductance
gm
mS
VDS = 10V, VGS = 0, f = 1kHz
Input capacitance (Common Source) Ciss
14
pF
pF
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
3.5
VDS = 30V, ID = 1mA, GV = 80dB
Noise figure
NV
60
mV
Rg = 100kΩ, Function = FLAT
* IDSS rank classification
Runk
P
Q
R
IDSS (mA)
0.5 to 3
1OP
2 to 6
1OQ
4 to 12
1OR
Marking Symbol
1
Silicon Junction FETs (Small Signal)
2SK662
PD
Ta
ID VDS
ID
VGS
240
200
160
120
80
8
7
6
5
4
3
2
1
0
9.6
8.0
6.4
4.8
3.2
1.6
0
VDS=10V
Ta=25˚C
VGS=0V
– 0.1V
– 0.2V
Ta=75˚C
25˚C
– 0.3V
– 0.4V
40
–25˚C
– 0.8 – 0.6 – 0.4 – 0.2
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
–1.0
0
)
(
)
(
V
)
(
Gate to source voltage VGS V
Ambient temperature Ta ˚C
Drain to source voltage VDS
gm
VGS
gm
ID
Ciss, Coss
VDS
20
16
12
8
20
16
12
8
10
8
VDS=10V
Ta=25˚C
VGS=–3V
f=1MHz
Ta=25˚C
VDS=10V
Ta=25˚C
IDSS=5mA
6
Ciss
2mA
4
IDSS=5mA
Coss
4
4
2
2mA
– 0.2
0
– 0.8
0
0
– 0.6
– 0.4
0
0
1
2
3
4
5
6
7
8
1
3
10
30
100
( )
V
(
)
( )
Drain to source voltage VDS V
Gate to source voltage VGS
Drain current ID mA
Crss
VDS
NF
f
5
4
3
2
1
0
12
10
8
VDS=10V
ID=5.2mA
Ta=25˚C
VGS=3V
f=1MHz
Ta=25˚C
6
Rg=500Ω
4
2
1kΩ
102
0
10
1
3
10
30
100
103
104
105
(
V
)
(
Hz
)
Drain to source voltage VDS
Frequency
f
2
相关型号：
2SK662TX
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET
PANASONIC
2SK663H
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET
PANASONIC
2SK663P
Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, SMINI3-G1, SC-70, 3 PIN
PANASONIC
2SK663R
Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, SMINI3-G1, SC-70, 3 PIN
PANASONIC
2SK664H
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PANASONIC
2SK664TX
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PANASONIC
2SK665H
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PANASONIC
2SK665TX
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PANASONIC
©2020 ICPDF网 联系我们和版权申明