2SK665TX [PANASONIC]
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | 2SK665TX |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
■ Features
0.425
1.25±0.1
0.425
● High-speed switching
● Small drive current owing to high input inpedance
● High electrostatic breakdown voltage
1
3
2
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Symbol
VDS
VGSO
ID
Ratings
Unit
V
20
0.2±0.1
8
100
V
mA
mA
mW
°C
1: Gate
2: Source
3: Drain
Max drain current
IDP
200
EIAJ: SC-70
S-Mini Type Package (3-pin)
Allowable power dissipation
Channel temperature
Storage temperature
PD
150
Tch
150
Marking Symbol: 3O
Internal Connection
Tstg
−55 to +150
°C
D
S
R1
G
R2
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
IDSS
Conditions
min
typ
max
10
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
VDS = 10V, VGS = 0
GS = 8V, VDS = 0
IGSS
V
40
20
80
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Vth
ID = 100µA, VDS = VGS
1.5
3.5
50
V
3
*
RDS(on)
| Yfs |
VOH
VSL
ID = 20mA, VGS = 5V
Ω
ID = 20mA, VDS = 5V, f = 1kHz
VDD = 5V, VGS = 1V, RL = 200Ω
VDD = 5V, VGS = 5V, RL = 200Ω
20
mS
V
4.5
1
200
1
V
1
*
R1 + R2
100
kΩ
µs
µs
2
*
Turn-on time
ton
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
2
*
Turn-off time
toff
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
1
2
1 Resistance ratio R1/R2 = 1/50
*
ton, toff measurement circuit 3 Pulse measurement
*
*
Vout
200Ω
90%
10%
Vin
Vout
VGS = 5V
50Ω
VDD = 5V
10%
90%
ton
toff
1
Silicon MOS FETs (Small Signal)
2SK665
PD
Ta
ID VDS
ID
VGS
240
200
160
120
80
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Ta=25˚C
VDS=5V
VGS=6.0V
5.5V
Ta=–25˚C
25˚C
75˚C
5.0V
4.5V
4.0V
3.5V
3.0V
40
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
2
4
6
8
10
(
)
( )
V
( )
Gate to source voltage VGS V
Ambient temperature Ta ˚C
Drain to source voltage VDS
| Yfs |
VGS
Ciss, Coss
VDS
RDS(on)
VGS
50
40
30
20
10
0
12
10
8
120
100
80
60
40
20
0
VDS=5V
Ta=25˚C
VGS=0
f=1MHz
Ta=25˚C
ID=20mA
Ciss
6
Ta=75˚C
4
25˚C
Coss
–25˚C
2
0
0.1
0
2
4
6
8
10
0.3
1
3
10
30
100
0
2
4
6
8
10
( )
V
( )
V
( )
Gate to source voltage VGS V
Gate to source voltage VGS
Drain to source voltage VDS
VIN
IO
1000
VO=1V
Ta=25˚C
300
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
30
100
(
)
Output current IO mA
2
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