2SK4174 [PANASONIC]
Power Field-Effect Transistor, 28A I(D), 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220D-A1, 3 PIN;
| 型号： | 2SK4174 |
| 厂家： | 
PANASONIC |
| 描述： | Power Field-Effect Transistor, 28A I(D), 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220D-A1, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOS FETs
2SK4174
Silicon N-channel enhancement MOS FET
For high speed switching circuits
Features
Package
Gate-source surrender voltage VGSS : ±25 V guaranteed
Avalanche energy capability guaranteed: EAS > 216 mJ
High-speed switching: tf = 90 ns (typ.)
ꢀCode
TO-220D-A1
ꢀPin Name
1: Gate
Absolute Maximum Ratings TC = 25°C
2: rain
ce
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Symbol
VDSS
VGSS
ID
Rating
110
Unit
V
Marking Symbol: K4174
V
±5
A
Internal Connection
Peak drain current *
IP
A
±130
216
D
Avalanche energy capability
Avalanche energy capability *
EAS
EAR
mJ
mJ
W
W
°C
°C
9
G
40
Drain power dissipation
PD
Tj
T = 25°C
a
2.0
S
Junction temperature
Storage temperature
150
T
5 to +150
Note) : surane of ve pulse. (Repeitive perios on-duty ≤ 20%)
*
Bt, imust thin 40% of all tat the timimpressed pulse rpetitively.
T
5.0 sOn-duty 20%
µ ≤
≤
Electrical Chs TC = 25°C±3°C
Param
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Symbol
Conditions
ID = 1 mA, VGS = 0
Min
Typ
Max
Unit
V
VDSS
IDSS
IGSS
Vth
110
VDS = 88 V, VGS = 0
VGS = ±25 V, VDS = 0
VDS = 10 V, ID = 1.0 mA
1.0
±1.0
4.0
mA
mA
V
2.0
14
Drain-source ON resistance
Forward transfer conductance
Short-circuit inputcapacitance(Commonsource)
Short-circuitoutputcapacitance(Commonsource)
Reverse transfer capacitance (Common source)
Turn-on delay time
RDS(on) VGS = 10 V, ID = 14.0A
38
21
52
mW
S
VDS = 10 V, ID = 14.0A
Yfs
Ciss
Coss
Crss
td(on)
tr
1500
500
180
30
pF
pF
pF
ns
VDS = 10 V, VGS = 0, f = 1 MHz
Rise time
50
ns
VDD = 30 V, ID = 14.0A
RL ≈ 2.2 W, VGS = 10 V
Turn-off delay time
td(off)
tf
150
90
ns
Fall time
ns
Publication date: February 2009
SJG00045AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK4174
Electrical Characteristics (continued) TC = 25°C±3°C
Parameter
Diode forward voltage
Symbol
VDSF
trr
Conditions
IDR = 28A, VGS = 0
Min
Typ
1.0
75
Max
Unit
V
1.4
Reverse recovery time
Reverse recovery charge
Gate charge load
ns
L = 230 mH, VDD = 100 V
IDR = 14.0A, di / dt = 100A/ms
Qrr
0.3
64
nC
Qg
nC
Gate-source charge
Qgs
VDD = 30 V, ID = 14.0A, VGS = 10 V
6.0
28.5
nC
Gate-drain charge
Qgd
nC
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Rth(ch-c)
Rth(ch-a)
3.13
62.5
°C/W
°C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARJIS C 7030 measuring metods for transistors.
PC T
Safoperation aea
a
103
100
80
Norepetitive ulse
TC = 2°C
IDP
102
0
t = 1.0 µs
100 µs
ID
60
TC = Ta
1 ms
40
0
0
DC
10 ms
Wihout a at shink
50
10−1
0
00
150
1
10
102
103
( )
Ambient temperaure Ta (°C
Drain-source voltage VDS V
2
SJG00045AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK4174
TO-220D-A1
Unit: mm
4.6 ±0.2
2.9 ±0.2
9.9 ±0.3
3.2 ±0.1
1.4 ±0
1.6 ±0
2.6 ±0.1
0.8 ±0.1
0.40 ±0.05
2.54 ±0.3
5.08 ±0.5
1
2
3
SJG00045AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability requied, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subjet to change wit notice for modification and/or im-
provement. At the final stage of your design, purchasingr use of the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions stisfy your requirements.
(5) When designing your equipment, comply with he ange f absolute maximing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirent etc.). Especiall, plee be ceful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and modeswitching. Otherwise, we will not be liable for any
defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.
(6) Comply with the instructios for se in rder to prevent breakdwn and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanicastress) at the time of andlig, mounting or at customer's process. When using products for which
damp-proof packinis reqired, stisfy the condtions, sch as shelf life and the elapsed time since first opening the packages.
(7) This book may e not eprinted or reprodhethr wholly or partially, without the prior written permission of our company.
2008080
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