2SK4177-DL-1E [ONSEMI]
N 沟道功率 MOSFET,1500V,2A,13Ω,TO-263-2L;型号: | 2SK4177-DL-1E |
厂家: | ONSEMI |
描述: | N 沟道功率 MOSFET,1500V,2A,13Ω,TO-263-2L |
文件: | 总7页 (文件大小:291K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA0869A
2SK4177
N-Channel Power MOSFET
http://onsemi.com
Ω
1500V, 2A, 13 , TO-263-2L
Features
•
•
ON-resistance R (on)=10 (typ.)
10V drive
Input capacitance Ciss=380pF (typ.)
Ω
DS
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
1500
±20
2
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
DP
PW 10 s, duty cycle 1%
4
A
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25°C
80
W
°C
°C
mJ
A
D
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
41
2
AS
I
AV
Note : 1 V =50V, L=20mH, I =2A (Fig.1)
*
DD
2 L 20mH, single pulse
AV
*
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: TO-263-2L
7535-001
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
2SK4177-DL-1E
Packing Type: DL
Marking
4.5
10.0
8.0
1.3
4
K4177
5.3
LOT No.
DL
0.254
0.5
1
2
3
1.27
0.8
Electrical Connection
2.54
2.54
2, 4
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
TO-263-2L
3
Semiconductor Components Industries, LLC, 2013
July, 2013
D0512 TKIM TC-00002833/31208QB TIIM TC-00001270 No. A0869-1/7
2SK4177
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
1500
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =1mA, V =0V
D GS
(BR)DSS
I
V
=1200V, V =0V
DS GS
100
A
A
μ
DSS
I
V
=±16V, V =0V
±10
3.5
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
2.5
0.7
V
GS
yfs
DS D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
V
DS
=20V, I =1A
D
1.4
S
|
R
(on)
I
D
=1A, V =10V
GS
10
380
70
13
Ω
DS
Ciss
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
V
DS
=30V, f=1MHz
Reverse Transfer Capacitance
Turn-ON Delay Time
40
t
t
t
t
(on)
12
d
r
Rise Time
37
See Fig.2
Turn-OFF Delay Time
(off)
152
59
d
f
Fall Time
Total Gate Charge
Qg
37.5
2.7
20
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=200V, V =10V, I =2A
GS
D
V
I =2A, V =0V
S GS
0.88
1.2
SD
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
V =200V
DD
V
IN
10V
0V
L
D
S
I
=1A
≥50Ω
RG
D
V
IN
R =190Ω
L
G
D
V
OUT
PW≤10μs
D.C.≤1%
2SK4177
10V
0V
V
DD
50Ω
G
2SK4177
P. G
S
50Ω
Ordering Information
Device
Package
TO-263-2L
Shipping
800pcs./reel
memo
2SK4177-DL-1E
Pb Free
No. A0869-2/7
2SK4177
I
D
-- V
I
D
-- V
DS
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
Tc=25°C
pulse
V =20V
DS
pulse
Tc= --25°C
25°C
75°C
6V
5V
0.5
0
0.5
0
V
=4V
GS
0
0
3
5
2
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
-- V
IT07130
Gate-to-Source Voltage, V
GS
-- V
IT07131
DS
GS
R
(on) -- V
R
(on) -- Tc
DS
DS
30
25
20
15
10
30
25
20
15
10
I =1A
V
I =1A
D
D
=10V
GS
Tc=75°C
25°C
--25°C
5
0
5
0
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
IT07132
Case Temperature, Tc -- °C
IT07133
GS
yfs -- I
D
I
-- V
SD
S
5
10
7
5
V
=20V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.01
0.2
0.1
5
7
2
3
5
7
2
3
0.4
0.6
0.8
1.0
1.2
0.1
1.0
Drain Current, I -- A
IT07134
IT07135
Diode Forward Voltage, V
Ciss, Coss, Crss -- V
DS
-- V
D
SD
SW Time -- I
D
5
f=1MHz
V
=200V
=10V
DD
3
2
V
GS
3
2
1000
7
5
100
7
3
2
5
100
7
5
3
2
3
2
t (on)
d
10
0.1
10
0
5
10
15
20
25
30
35
40
45
50
2
3
5
7
2
3
1.0
Drain Current, I -- A
IT09038
IT09037
Drain-to-Source Voltage, V
-- V
D
DS
No. A0869-3/7
2SK4177
V
-- Qg
A S O
GS
10
7
5
10
9
V
=200V
DS
I
=4A(PW≤10μs)
DP
I =2A
D
3
2
I =2A
8
D
7
1.0
7
5
6
5
3
2
4
Operation in this area
is limited by R (on).
0.1
7
5
DS
3
2
3
2
1
0
Tc=25°C
Single pulse
0.01
1.0
0
10
20
30
40
IT07138
2
3
5
7
2
3
5
7
2
3
5
7
2 3
10
100
1k
IT16905
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V -- V
DS
P
-- Tc
E
-- Ta
D
AS
120
100
80
100
80
60
60
40
40
20
0
20
0
0
25
50
75
100
125
150
175
IT10478
0
20
40
60
80
100
120
140
160
IT12898
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No. A0869-4/7
2SK4177
Taping Specification
2SK4177-DL-1E
No. A0869-5/7
2SK4177
Outline Drawing
Land Pattern Example
2SK4177-DL-1E
Mass (g) Unit
Unit: mm
1.5
mm
* For reference
No. A0869-6/7
2SK4177
Note on usage : Since the 2SK4177 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0869-7/7
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