2SJ164Q [PANASONIC]
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, NS-A1, 3 PIN;型号: | 2SJ164Q |
厂家: | PANASONIC |
描述: | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, NS-A1, 3 PIN 晶体 小信号场效应晶体管 开关 |
文件: | 总2页 (文件大小:33K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Silicon Junction FETs (Small Signal)
2SJ164
Silicon P-Channel Junction FET
For switching
unit: mm
4.0±0.2
Complementary to 2SK1104
■ Features
● Low ON-resistance
● Low-noise characteristics
■ Absolute Maximum Ratings (Ta = 25°C)
marking
Parameter
Gate to Drain voltage
Drain current
Symbol
VGDS
ID
Ratings
65
Unit
V
1
2
3
−20
mA
mA
mW
°C
Gate current
IG
−10
1.27 1.27
1: Source
2: Gate
2.54±0.15
Allowable power dissipation
Channel temperature
Storage temperature
PD
300
3: Drain
EIAJ: SC-72
New S Type Package
Tch
150
Tstg
−55 to +150
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
VDS = −10V, VGS = 0
min
typ
max
−6
Unit
mA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
IDSS
− 0.2
IGSS
VGS = 30V, VDS = 0
10
VGDS
VGSC
| Yfs |
RDS(on)
IG = 10µA, VDS = 0
65
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
VDS = −10V, ID = −10µA
VDS = −10V, ID = −1mA, f = 1kHz
VDS = −10mV, VGS = 0
1.5
2.5
300
10
3
3.5
V
1.8
mS
Ω
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
pF
pF
pF
VDS = −10V, VGS = 0, f = 1MHz
3
* IDSS rank classification
Runk
O
P
Q
R
IDSS (mA)
− 0.2 to −1 − 0.6 to −1.5
−1 to −3
−2.5 to −6
1
Silicon Junction FETs (Small Signal)
2SJ164
PD
Ta
ID VDS
ID
VGS
200
175
150
125
100
75
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
– 0.5
0
–3.0
–2.5
–2.0
–1.5
–1.0
– 0.5
0
VDS=–10V
Ta=25˚C
Ta=25˚C
VGS=0V
0.2V
0.4V
50
0.6V
0.8V
25
0
0
20 40 60 80 100 120 140 160
0
–2
–4
–6
–8
–10 –12
0
1
2
3
4
5
)
(
)
(
V
)
(
Gate to source voltage VGS V
Ambient temperature Ta ˚C
Drain to source voltage VDS
| Yfs | VGS
| Yfs | ID
Ciss, Coss, Crss
VDS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
16
14
12
10
8
24
20
16
12
8
f=1MHz
VGS=0
Ta=25˚C
VDS=–10V
f=1kHz
Ta=25˚C
VDS=–10V
f=1kHz
Ta=25˚C
Ciss
6
4
4
Coss
Crss
2
0
0
–1
2.0
1.5
1.0
0.5
0
0
–2
–4
–6
–8
–10 –12
–3
–10
–30
–100
( )
V
(
)
( )
Drain to source voltage VDS V
Gate to source voltage VGS
Drain current ID mA
2
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