2SJ164Q [PANASONIC]

Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, NS-A1, 3 PIN;
2SJ164Q
型号: 2SJ164Q
厂家: PANASONIC    PANASONIC
描述:

Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, NS-A1, 3 PIN

晶体 小信号场效应晶体管 开关
文件: 总2页 (文件大小:33K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Silicon Junction FETs (Small Signal)  
2SJ164  
Silicon P-Channel Junction FET  
For switching  
unit: mm  
4.0±0.2  
Complementary to 2SK1104  
Features  
Low ON-resistance  
Low-noise characteristics  
Absolute Maximum Ratings (Ta = 25°C)  
marking  
Parameter  
Gate to Drain voltage  
Drain current  
Symbol  
VGDS  
ID  
Ratings  
65  
Unit  
V
1
2
3
20  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
1.27 1.27  
1: Source  
2: Gate  
2.54±0.15  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
300  
3: Drain  
EIAJ: SC-72  
New S Type Package  
Tch  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
VDS = 10V, VGS = 0  
min  
typ  
max  
6  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
0.2  
IGSS  
VGS = 30V, VDS = 0  
10  
VGDS  
VGSC  
| Yfs |  
RDS(on)  
IG = 10µA, VDS = 0  
65  
Gate to Source cut-off voltage  
Forward transfer admittance  
Drain to Source ON-resistance  
VDS = 10V, ID = 10µA  
VDS = 10V, ID = 1mA, f = 1kHz  
VDS = 10mV, VGS = 0  
1.5  
2.5  
300  
10  
3
3.5  
V
1.8  
mS  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
pF  
pF  
pF  
VDS = 10V, VGS = 0, f = 1MHz  
3
* IDSS rank classification  
Runk  
O
P
Q
R
IDSS (mA)  
0.2 to 1 0.6 to 1.5  
1 to 3  
2.5 to 6  
1
Silicon Junction FETs (Small Signal)  
2SJ164  
PD  
Ta  
ID VDS  
ID  
VGS  
200  
175  
150  
125  
100  
75  
–4.0  
–3.5  
–3.0  
–2.5  
–2.0  
–1.5  
–1.0  
– 0.5  
0
–3.0  
–2.5  
–2.0  
–1.5  
–1.0  
– 0.5  
0
VDS=–10V  
Ta=25˚C  
Ta=25˚C  
VGS=0V  
0.2V  
0.4V  
50  
0.6V  
0.8V  
25  
0
0
20 40 60 80 100 120 140 160  
0
–2  
–4  
–6  
–8  
–10 –12  
0
1
2
3
4
5
)
(
)
(
V
)
(
Gate to source voltage VGS V  
Ambient temperature Ta ˚C  
Drain to source voltage VDS  
| Yfs | VGS  
| Yfs | ID  
Ciss, Coss, Crss  
VDS  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
16  
14  
12  
10  
8
24  
20  
16  
12  
8
f=1MHz  
VGS=0  
Ta=25˚C  
VDS=–10V  
f=1kHz  
Ta=25˚C  
VDS=–10V  
f=1kHz  
Ta=25˚C  
Ciss  
6
4
4
Coss  
Crss  
2
0
0
–1  
2.0  
1.5  
1.0  
0.5  
0
0
–2  
–4  
–6  
–8  
–10 –12  
–3  
–10  
–30  
–100  
( )  
V
(
)
( )  
Drain to source voltage VDS V  
Gate to source voltage VGS  
Drain current ID mA  
2

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