2SJ166 [KEXIN]
MOS Fied Effect Transistor; MOS田间效应晶体管
| 型号： | 2SJ166 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Fied Effect Transistor |
| 文件： | 总1页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
MOS Fied Effect Transistor
2SJ166
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
3
Directly driven by Ics having a 5V poer supply.
Not necessary to consider dreving current because of its high
input impedance.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
Possible to reduce the number of parts by omitting the bias resistor.
+0.1
1.9
-0.1
1 GATE
2 SOURCE
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Symbol
VDSS
VGSS
ID
Rating
-50
Unit
V
V
7.0
mA
mA
mW
100
Drain current(pulse) *
ID
200
Total power dissipation
Channel temperature
PT
200
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 ms; d
50%.
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
Testconditons
Min
Typ
Max
-10
Unit
A
IDSS
IGSS
VDS=-50V,VGS=0
VGS= 7.0V,VDS=0
VDS=-5.0V,ID=-1.0
1.0
A
VGS(off)
Yfs
-1.0
30
-2.1
50
18
18
11
3
-3.0
V
A
VDS=-5.0V,ID=-20mA
ms
RDS(on) VGS=-4.0V,ID=-20mA
Ciss
50
pF
pF
pF
ns
ns
ns
ns
VDS=-5.0V,VGS=0,f=1Mhz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Coss
Crss
td(on)
tr
40
58
62
62
VGS(on)=-5.0V,RG=10 ,VDD=-5.0V,ID=-
20mA RL=250
Turn-off delay time
Fall time
td(off)
tf
Marking
Marking
H11
1
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