2SD2479S [PANASONIC]
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, MT-3-A1, 3 PIN;
| 型号： | 2SD2479S |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, MT-3-A1, 3 PIN 放大器 晶体管 |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2479
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency amplification
7.5 0.2
4.5 0.2
■ Features
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
0.65 0.1
0.85 0.1
1.0 0.1
0.8 C
0.8 C
0.7 0.1
0.7 0.1
1.15 0.2
■ Absolute Maximum Ratings Ta = 25°C
1.15 0.2
Parameter
Symbol
Rating
Unit
V
0.5 0.1
0.4 0.1
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
120
100
V
0.8 C
1
2
3
5
V
1: Emitter
2: Collector
3: Base
Collector current
IC
ICP
PC
Tj
2
A
2.5 0.2
2.5 0.2
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
3
1.5
A
MT-3-A1 Package
W
°C
°C
Internal Connection
150
C
E
Tstg
−55 to +150
B
≈ 200 Ω
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
120
100
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
V
V
0.1
1
µA
µA
IEBO
1, 2
Forward current transfer ratio *
hFE
4000
40 000
1.5
2
1
Collector-emitter saturation voltage *
VCE(sat) IC = 1 A, IB = 1 mA
VBE(sat) IC = 1 A, IB = 1 mA
V
1
Base-emitter saturation voltage *
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
150
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
S
hFE
4000 to 10000 8000 to 20000 16000 to 40000
Publication date: February 2003
SJD00269BED
1
2SD2479
PC Ta
IC VCE
IC VBE
1.6
1.2
0.8
0.4
0
1.2
0.8
0.4
0
Ta = 25°C
VCE = 10 V
IB
=
1.0 mA
4
3
2
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
Ta = 85°C
25°C
0.4 mA
0.3 mA
−25°C
0.2 mA
0.1 mA
1
0
0
2
4
6
8
10
12
0
1
2
3
0
1
0
40
80
120
160
(
)
( )
Base-emitter voltage VBE V
Collector-emitter voltage VCE
V
Ambient temperature Ta (°C)
VBE(sat) IC
VCE(sat) IC
hFE IC
10
100
10
1
10000
8000
6000
IC / IB = 1000
IC / IB = 1000
VCE = 10 V
Ta = 85°C
Ta = 85°C
25°C
Ta = −25°C
25°C
25°C
1
85°C
4000
2000
0
−25°C
−25°C
0.1
0.1
102
103
(
104
102
103
104
10
102
103
(
104
1
10
1
10
( )
Collector current IC A
)
)
Collector current IC
A
Collector current IC
A
Cob VCB
1000
f = 1 MHz
Ta = 25°C
100
10
10
20
30
40
(
)
V
Collector-base voltage VCB
SJD00269BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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