2SD1258H [PANASONIC]
Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin;
| 型号： | 2SD1258H |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1258
Silicon NPN triple diffusion planar type
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
For power amplification with high forward current transfer ratio
1.0±0.1
Features
High foward current transfer ratio hFE
Satisfactory linearity of foward current transfer ratio hFE
■
1.5max.
1.1max.
0.5max.
●
●
0.8±0.1
●
N type package enabling direct soldering of the radiating fin to
2.54±0.3
the printed circuit board, etc. of small electronic equipment.
5.08±0.5
1:Base
2:Collector
3:Emitter
1
2
3
Absolute Maximum Ratings (T =25˚C)
■
C
N Type Package
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Unit: mm
8.5±0.2
6.0±0.3
3.4±0.3
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
200
1.0±0.1
150
V
6
V
2.5
A
IC
1
0.1
A
Base current
IB
A
R0.5
R0.5
0.8±0.1
0 to 0.4
Collector power TC=25°C
40
2.54±0.3
1.1 max.
PC
W
5.08±0.5
dissipation
Ta=25°C
1.3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1:Base
2:Collector
3:Emitter
1
2
3
Tstg
–55 to +150
N Type Package (DS)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 200V, IE = 0
VEB = 6V, IC = 0
C = 25mA, IB = 0
IEBO
Collector to emitter voltage
Forward current transfer ratio
VCEO
I
150
500
*
hFE
VCE = 4V, IC = 0.2A
2000
1
Collector to emitter saturation voltage VCE(sat)
IC = 0.5A, IB = 0.02A
V
Transition frequency
fT
VCE = 4V, IC = 0.1A, f = 10MHz
25
MHz
*hFE Rank classification
Rank
hFE
Q
P
500 to 1200 800 to 2000
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 2000) in the rank classification.
1
Power Transistors
2SD1258
PC — Ta
IC — VCE
VCE(sat) — IC
50
0.5
0.4
0.3
0.2
0.1
0
IC/IB=25
TC=25˚C
IB=400µA
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
10
(1)
40
30
20
10
0
TC=100˚C
3
1
350µA
300µA
250µA
200µA
25˚C
0.3
0.1
–25˚C
150µA
100µA
0.03
0.01
50µA
(2)
(3)
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01
0.03
0.1
0.3
1
3
(
)
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
fT — IC
10000
10000
VCE=4V
VCE=4V
f=10MHz
TC=25˚C
IC/IB=25
10
3000
3000
1000
TC=100˚C
25˚C
3
1
1000
TC=100˚C
–25˚C
–25˚C
25˚C
300
100
300
100
0.3
0.1
30
10
30
10
0.03
0.01
3
1
3
1
0.01
0.03
0.1
0.3
1
3
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
(
A
)
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
(2)
t=10ms
1ms
ICP
3
1
IC
1
0.3
0.1
300ms
10–1
10–2
0.03
0.01
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
(
V
)
( )
t s
Collector to emitter voltage VCE
Time
2
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