2SD1259 [KEXIN]
Silicon NPN Triple Diffusion Planar Type; 硅NPN三重扩散平面型
| 型号： | 2SD1259 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Triple Diffusion Planar Type |
| 文件： | 总1页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type
2SD1259;2SD1259A
TO-252
Unit: mm
6.50+0.15
-0.15
2.30+0.1
-0.1
5.30+0.2
0.50+0.8
-0.7
-0.2
Features
High forward current transfer ratio hFE.
Satisfactory linearity of forward current transfer ratio hFE.
0.127
max
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
Rating
Unit
V
2SD1259
2SD1259A
2SD1259
2SD1259A
80
VCBO
VCEO
100
V
Collector-emitter voltage
60
V
80
V
Emitter-base voltage
Collector current
VEBO
IC
ICP
IB
6
V
3
A
Peak collector current
Base current
6
A
1
1.3
A
W
W
Collector power dissipation
Ta = 25
PC
40
Junction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
V
Collector-emitter voltage
2SD1259
60
80
VCEO
IC = 25 mA, IB = 0
2SD1259A
2SD1259
V
Collector-base cutoff current
VCB = 80 V, IE = 0
VCB = 100 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
100
100
100
100
2500
1.0
ìA
ìA
ìA
ìA
ICBO
2SD1259A
Collector-emitter cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
ICEO
IEBO
hFE
VCE = 4 V, IC = 0.5 A
500
VCE(sat) IC = 2 A, IB = 0.05 A
fT VCE = 12 V, IC = 0.2 A, f = 10 MHz
V
50
MHz
hFE Classification
Rank
hFE
Q
P
O
500 1000
800 1500
1200 2500
1
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