2SD1259AO [ETC]
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR ; 晶体管| BJT | NPN | 80V V（ BR ） CEO | 3A I（C ） | TO- 221VAR
| 型号： | 2SD1259AO |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR
|
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
For power amplification with high forward current transfer ratio
1.0±0.1
Features
High foward current transfer ratio hFE
■
●
1.5max.
1.1max.
0.5max.
●
Satisfactory linearity of foward current transfer ratio hFE
N type package enabling direct soldering of the radiating fin to
●
0.8±0.1
the printed circuit board, etc. of small electronic equipment.
2.54±0.3
5.08±0.5
Absolute Maximum Ratings (T =25˚C)
1:Base
2:Collector
3:Emitter
■
C
1
2
3
Parameter
Symbol
Ratings
Unit
N Type Package
Collector to
2SD1259
2SD1259A
2SD1259
80
VCBO
V
Unit: mm
8.5±0.2
6.0±0.3
3.4±0.3
base voltage
Collector to
100
1.0±0.1
60
VCEO
V
emitter voltage 2SD1259A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
IC
6
V
A
A
A
6
3
R0.5
R0.5
0.8±0.1
0 to 0.4
Base current
IB
1
40
2.54±0.3
1.1 max.
5.08±0.5
Collector power TC=25°C
PC
W
dissipation
Ta=25°C
1.3
1:Base
2:Collector
3:Emitter
1
2
3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
N Type Package (DS)
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
current
Symbol
ICES
Conditions
min
typ
max
100
100
100
100
Unit
2SD1259
VCE = 80V, IE = 0
µA
2SD1259A
VCE = 100V, IE = 0
VCE = 40V, IB = 0
VCB = 6V, IC = 0
Collector cutoff current
Emitter cutoff current
ICEO
IEBO
µA
µA
Collector to emitter 2SD1259
60
80
VCEO
IC = 25mA, IB = 0
V
voltage
2SD1259A
*
Forward current transfer ratio
hFE
VCE = 4V, IC = 0.5A
500
2500
1
Collector to emitter saturation voltage VCE(sat)
IC = 2A, IB = 0.05A
V
Transition frequency
fT
VCE = 12V, IC = 0.2A, f = 10MHz
50
MHz
*hFE Rank classification
Rank
hFE
Q
P
O
500 to 1000 800 to 1500 1200 to 2500
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
1
Power Transistors
2SD1259, 2SD1259A
PC — Ta
IC — VCE
IC — VBE
50
1.0
0.8
0.6
0.4
0.2
0
5
IB=1.2mA
1.0mA
TC=25˚C
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
(1)
25˚C
40
30
20
10
0
4
3
2
1
0
0.7mA
–25˚C
TC=100˚C
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
(2)
(3)
0.1mA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
10000
10000
IC/IB=40
VCE=4V
VCE=12V
f=10MHz
TC=25˚C
30
10
3000
3000
1000
TC=100˚C
25˚C
1000
–25˚C
TC=100˚C
3
1
300
100
300
100
25˚C
–25˚C
0.3
0.1
30
10
30
10
0.03
0.01
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
(2)
ICP
3
1
t=1ms
IC
10ms
300ms
1
0.3
0.1
10–1
10–2
0.03
0.01
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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2001 MAR
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