2SC5295Q [PANASONIC]
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 ; 晶体管| BJT | NPN | 10V V（ BR ） CEO |我为65mA （C ） | SOT- 416\n
| 型号： | 2SC5295Q |
| 厂家： | 
PANASONIC |
| 描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416
|
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
2SC5295
Silicon NPN epitaxial planer type
Unit: mm
For 2 GHz band low-noise amplification
+±.1
+±.1
±.2
±.1ꢀ
–±.±ꢀ
–±.±ꢀ
3
I Features
• High transition frequency fT
• Low collector output capacitance Cob
• SS-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
1
2
(±.ꢀ) (±.ꢀ)
1.±±±.1
1.6±±.1
ꢀ°
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
1: Base
2: Emitter
3: Collector
10
V
2
65
V
EIAJ: SC-75
mA
mW
°C
°C
SS-Mini Type Package (3-pin)
Collector power dissipation
Junction temperature
Storage temperature
PC
125
Marking Symbol: 3S
Tj
125
Tstg
−55 to +125
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio *
Transition frequency
Collector output capacitance
Forward transfer gain
Power gain
Symbol
ICBO
IEBO
hFE
Conditions
Min
Typ
Max
1
Unit
µA
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
1
µA
VCE = 8 V, IC = 20 mA
50
300
fT
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
VCE = 8 V, IC = 7 mA, f = 1.5 GHz
7.0
8.5
0.6
9
GHz
pF
Cob
1.0
3.0
2
| S21e
|
7
dB
dB
dB
GUM
NF
10
2.2
Noise figure
Note) *: Rank classification
Rank
Q
R
S
hFE
50 to 120
100 to 170
150 to 300
1
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