2SC5296 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC5296 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5296
DESCRIPTION
·
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
·Built in damper diode
APPLICATIONS
·Ultrahigh-definition CRT display
·Horizontal deflection output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
1500
V
V
V
A
A
Open base
800
Open collector
6
8
16
ICM
Collector current-peak
TC=25℃
60
PC
Collector power dissipation
W
3
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5296
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
VBEsat
VCEO(SUS)
IEBO
PARAMETER
Collector-emitter saturation voltage IC=5A;IB=1.25 A
Base-emitter saturation voltage IC=5A;IB=1.25 A
Collector-emitter sustaining voltage IC=100mA;IB=0
CONDITIONS
MIN
TYP.
MAX
5
UNIT
V
1.5
V
800
40
V
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
VEB=4V IC=0
130
10
1
mA
μA
mA
ICBO
VCB=800V ;IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
ICES
hFE-1
15
4
25
7
hFE-2
DC current gain
Switching times
tstg Storage time
tf Fall time
3.0
0.2
μs
μs
IC=4A;RL=50Ω
IB1=0.8A; IB2=-1.6A
V
CC=200V
0.1
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5296
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5296
4
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