2SC3982A [PANASONIC]
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型(高击穿电压高速开关)型号: | 2SC3982A |
厂家: | PANASONIC |
描述: | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
文件: | 总3页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Power Transistors
2SC3982, 2SC3982A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
φ 3.3±0.2
5.0±0.3
20.0±0.5
3.0
Features
High-speed switching
■
●
●
High collector to base voltage VCBO
●
Wide area of safe operation (ASO)
●
1.5
Satisfactory linearity of foward current transfer ratio hFE
1.5
2.0±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
2.7±0.3
3.0±0.3
Parameter
Symbol
Ratings
Unit
1.0±0.2
0.6±0.2
Collector to
base voltage
Collector to
2SC3982
900
VCBO
V
5.45±0.3
2SC3982A
2SC3982
1000
10.9±0.5
900
VCES
V
emitter voltage 2SC3982A
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
1000
1:Base
2:Collector
3:Emitter
VCEO
VEBO
ICP
800
V
V
A
A
A
1
2
3
7
TOP–3L Package
15
IC
10
Base current
IB
5
150
Collector power TC=25°C
PC
W
Ta=25°C
dissipation
3.5
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
Unit
Collector cutoff
2SC3982
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
EB = 7V, IC = 0
µA
current
2SC3982A
50
Emitter cutoff current
IEBO
VCEO
hFE1
hFE2
V
50
µA
Collector to emitter voltage
IC = 10mA, IB = 0
800
8
V
VCE = 5V, IC = 0.1A
Forward current transfer ratio
V
CE = 5V, IC = 4A
6
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 4A, IB = 0.8A
1.5
1.5
V
V
IC = 4A, IB = 0.8A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 5V, IC = 1A, f = 1MHz
15
MHz
µs
0.7
3.0
0.3
IC = 4A, IB1 = 0.8A, IB2 = –1.6A,
VCC = 250V
µs
µs
1
Power Transistors
2SC3982, 2SC3982A
PC — Ta
IC — VCE
VCE(sat) — IC
200
12
10
8
100
IC/IB=5
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
IB=2A
30
10
(1)
1A
150
100
50
3
1
0.5A
0.4A
0.3A
25˚C
TC=100˚C –25˚C
6
0.3
0.1
4
0.2A
0.1A
2
0.03
0.01
(3)
(2)
0.05A
0
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.1
0.3
1
3
10
30
100
(
)
(
V
)
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
fT — IC
100
1000
100
IC/IB=5
VCE=5V
VCE=5V
f=1MHz
TC=25˚C
30
10
300
100
30
10
TC=100˚C
25˚C
3
1
30
10
3
1
TC=–25˚C
100˚C
–25˚C
25˚C
0.3
0.1
3
1
0.3
0.1
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
0.01 0.03
0.1
0.3
1
3
10
(
A
)
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
10000
100
100
IE=0
f=1MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
Non repetitive pulse
TC=25˚C
30
10
30
10
ICP
IC
3000
1000
t=0.1ms
(2IB1=–IB2
)
V
CC=200V
TC=25˚C
0.5ms
1ms
3
1
3
1
tstg
300
100
10ms
DC
0.3
0.1
0.3
0.1
tf
ton
30
10
0.03
0.01
0.03
0.01
1
3
10
30
100
0
1
2
3
4
5
6
7
)
8
1
3
10
30
100 300 1000
(
V
)
(
A
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
Power Transistors
2SC3982, 2SC3982A
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
16
ICP
Lcoil=100µH
L coil
IC/IB=5
(IB1=–IB2
14
)
TC=25˚C
T.U.T
IC
12
10
8
IB1
IC
–IB2
Vin
VCC
6
4
V
clamp
tW
2
0
0
200 400 600 800 1000 1200 1400 1600
(
V
)
Collector to emitter voltage VCE
Rth(t) — t
103
102
10
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
10–1
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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