2SC3988 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管![2SC3988](http://pdffile.icpdf.com/pdf1/p00144/img/icpdf/2SC3988_797504_icpdf.jpg)
型号: | 2SC3988 |
厂家: | ![]() |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:212K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3988
DESCRIPTION
·
·With TO-3PN package
·High breakdown voltage high reliability.
·Wide area of safe operation
·Fast switching speed
APPLICATIONS
·500V/25A switching regulator applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
800
500
7
UNIT
V
Open base
V
Open collector
V
25
A
ICP
Collector current-peak
Base current
40
A
IB
8
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
150
150
-55~150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3988
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
IC=1mA ; IE=0
MIN
800
500
7
TYP.
MAX
UNIT
V
IC=5mA ;RBE=∞
V
IC=1mA ;IC=0
V
IC=10A;IB1=-IB2=2A;
L=200μH
500
V
IC=12A; IB=2.4A
IC=12A; IB=2.4A
VCB=500V; IE=0
VEB=5V; IC=0
1.0
1.5
10
V
V
μA
μA
IEBO
Emitter cut-off current
10
hFE-1
DC current gain
IC=2.4A ; VCE=5V
IC=12A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=2.4A ; VCE=10V
15
8
50
hFE-2
DC current gain
Cob
Output capacitance
260
18
pF
fT
Transition frequency
MHz
Switching times
Turn-on time
0.5
3.0
0.3
μs
μs
μs
ton
tstg
tf
5IB1=-2.5IB2= IC=14A
Storage time
Fall time
VCC≈200V;RL=14.3Ω
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3988
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3988
4
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