OD-110W [OPTODIODE]
SUPER HIGH-POWER GaAlAs IR EMITTERS; 超高功率GaAlAs的红外线发射器
| 型号： | OD-110W |
| 厂家： | 
OPTODIODE CORP |
| 描述： | SUPER HIGH-POWER GaAlAs IR EMITTERS |
| 文件： | 总2页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUPER HIGH-POWER GaAlAs IR EMITTERS
OD-110W
FEATURES
• Ultra high optical output
• Four wire bonds on die corners
• Very uniform optical beam
• Standard 3-lead TO-39 hermetic package
• Chip size: 0.026 x 0.026
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two Anode
pins must be externally connected together.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
TEST CONDITIONS
I = 500mA
MIN
80
TYP
140
850
40
MAX
UNITS
mW
o
F
Peak Emission Wavelength, λ
I = 50mA
F
nm
P
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
I = 50mA
F
nm
I = 50mA
F
110
1.7
30
Deg
Volts
Volts
nsec
nsec
Forward Voltage, V
I = 500mA
F
F
2
Reverse Breakdown Voltage, V
Rise Time
I
= 10μA
= 50mA
= 50mA
5
R
R
I
I
20
FP
Fall Time
20
FP
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
1000mW
500mA
1.5A
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)2
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-40°C to 100°C
Maximum Junction Temperature
100°C
1
Thermal Resistance, R
THJA
2
Thermal Resistance, R
THJA
145°C/W Typical
75°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision June 23, 2013
SUPER HIGH-POWER GaAlAs IR EMITTERS
OD-110W
THERMAL DERATING CURVE
1000
900
800
700
INFINITE
HEAT SINK
600
500
400
NO
HEAT SINK
300
200
100
0
25
50
75
100
AMBIENT TEMPERATURE (°C)
DEGRADATION CURVE
RADIATION PATTERN
1.0
0.9
100
80
I
= 150mA
F
T = 63°C
j
I
= 250mA
F
0.8
0.7
60
40
T = 89°C
j
I
= 450mA
F
T = 90°C
j
450 mA
-3 Dev
T
= 25°C
CASE
NO PRE BURN-IN PERFORMED
0.6
0.5
20
0
1
10
100
1,000
10,000
–100 –80 –60 –40 –20
0
20
40
60
80
100
STRESS TIME, (hrs)
BEAM ANGLE, θ(deg)
SPECTRAL OUTPUT
POWER OUTPUT vs TEMPERATURE
100
80
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
60
40
20
0
0.6
0.5
750
800
850
900
950
–50
–25
0
25
50
75
100
WAVELENGTH, λ(nm)
AMBIENT TEMPERATURE (°C)
POWER OUTPUT vs FORWARD CURRENT
100
10
DC
1
10
100
1,000
FORWARD CURRENT, I (mA)
F
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision June 23, 2013
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