OD-148-C [OPTODIODE]
HIGH-POWER GaAlAs IR EMITTER CHIPS; HIGH -POWER的GaAlAs红外发射体芯片
| 型号： | OD-148-C |
| 厂家： | 
OPTODIODE CORP |
| 描述： | HIGH-POWER GaAlAs IR EMITTER CHIPS |
| 文件： | 总1页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH-POWERꢀGaAlAsꢀIRꢀEMITTERꢀCHIPS
OD-148-C
FEATURES
• High reliability LPE GaAlAs IRLED chips
.014
• Open center emission for imaging applications
• High output uniformity from emitting surfaces
• Gold contacts for high reliability bonding
.014
.008
All dimensions are nominal values in inches unless
otherwise specified.
EMITTING
SURFACE
.002
GOLD
METALLIZATION
.003
.005
N
GOLD
CONTACTS
P
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
TEST CONDITIONS
I = 100mA
MIN
TYP
8
MAX
1.9
UNITS
mW
nm
6
o
F
Peak Emission Wavelength, L
880
80
P
I = 50mA
F
Spectral Bandwidth at 50%, $L
Forward Voltage, V
nm
I = 100mA
F
1.55
30
Volts
Volts
pF
F
Reverse Breakdown Voltage, V
Capacitance, C
Rise Time
I
= 10MA
5
R
R
V
= 0V
17
R
0.5
0.5
Msec
Msec
Fall Time
ABSOLUTE MAXIMUM RATINGS AT 25°C
Power Dissipation
190mW
100mA
Continuous Forward Current
Peak Forward Current (10Ms, 300 Hz)
Reverse Voltage
3A
5V
Storage and Operating Temperature Range
Maximum Junction Temperature
-65°C to 150°C
150°C
The exact performance data depends on your package configuration and technique. Data listed in this specification is
for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days
from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
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