SMUN5214T1G [ONSEMI]
Digital Transistors (BRT) R1 = 10 k, R2 = 47 k; 数字晶体管( BRT ) R1 = 10千欧, R2 = 47 K·型号: | SMUN5214T1G |
厂家: | ONSEMI |
描述: | Digital Transistors (BRT) R1 = 10 k, R2 = 47 k |
文件: | 总12页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MUN2214, MMUN2214L,
MUN5214, DTC114YE,
DTC114YM3, NSBC114YF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 47 kW
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PIN CONNECTIONS
NPN Transistors with Monolithic Bias
Resistor Network
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
SC−59
CASE 318D
STYLE 1
XX MG
G
1
SOT−23
CASE 318
STYLE 6
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XXX MG
G
1
MAXIMUM RATINGS (T = 25°C)
A
SC−70/SOT−323
CASE 419
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
XX MG
G
STYLE 3
V
CBO
V
CEO
1
50
Vdc
SC−75
CASE 463
STYLE 1
I
C
100
40
mAdc
Vdc
XX M
XX M
V
IN(fwd)
1
Input Reverse Voltage
V
IN(rev)
6
Vdc
SOT−723
CASE 631AA
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
SOT−1123
CASE 524AA
STYLE 1
X M
1
XXX
= Specific Device Code
M
G
=
=
Date Code*
Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
August, 2012 − Rev. 0
DTC114Y/D
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
Table 1. ORDERING INFORMATION
†
Device
Part Marking
Package
Shipping
MUN2214T1G, SMUN2214T1G
8D
SC−59
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
(Pb−Free)
MUN2214T3G, SMUN2214T3G
MMUN2214LT1G, SMMUN2214LT1G
MUN5214T1G, SMUN5214T1G
DTC114YET1G, SDTC114YET1G
DTC114YM3T5G
8D
A8D
8D
8D
8D
J
SC−59
(Pb−Free)
SOT−23
(Pb−Free)
SC−70/SOT−323
(Pb−Free)
SC−75
(Pb−Free)
SOT−723
(Pb−Free)
NSBC114YF3T5G
SOT−1123
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
250
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
200
(1) (2) (3) (4) (5)
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm , 1 oz. copper trace
(5) SOT−723; Minimum Pad
2
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2214)
Total Device Dissipation
Symbol
Max
Unit
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
230
338
1.8
2.7
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
540
370
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R
264
287
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MUNN2214L)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
246
400
2.0
3.2
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
508
311
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
174
208
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5214)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
202
310
1.6
2.5
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
618
403
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
280
332
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTC114YE)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
200
300
1.6
2.4
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
600
400
°C/W
°C
q
JA
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTC114YM3)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
260
600
2.0
4.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
480
205
°C/W
°C
q
JA
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
2
2
3. FR−4 @ 100 mm , 1 oz. copper traces, still air.
4. FR−4 @ 500 mm , 1 oz. copper traces, still air.
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3
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBC114YF3)
Total Device Dissipation
Symbol
Max
Unit
P
D
T = 25°C
(Note 3)
(Note 4)
(Note 3)
(Note 4)
254
297
2.0
2.4
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
R
493
421
°C/W
q
JA
Thermal Resistance, Junction to Lead
(Note 3)
R
193
°C/W
°C
q
JL
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
2
2
3. FR−4 @ 100 mm , 1 oz. copper traces, still air.
4. FR−4 @ 500 mm , 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
0.2
−
CB
E
Collector−Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector−Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector−Emitter Breakdown Voltage (Note 5)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 5)
h
FE
(I = 5.0 mA, V = 10 V)
80
−
140
−
−
0.25
−
C
CE
Collector *Emitter Saturation Voltage (Note 5)
(I = 10 mA, I = 0.3 mA)
V
Vdc
Vdc
Vdc
Vdc
Vdc
kW
CE(sat)
C
B
Input Voltage (off)
(V = 5.0 V, I = 100 mA)
V
i(off)
i(on)
−
0.7
0.8
−
CE
C
Input Voltage (on)
(V = 0.2 V, I = 1.0 mA)
V
−
−
CE
C
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
−
0.2
CC
B
L
Output Voltage (off)
V
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
4.9
7.0
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
10
13
0.17
0.21
0.25
1
2
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
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4
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
TYPICAL CHARACTERISTICS
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3
1
1000
I /I = 10
C
B
V
CE
= 10 V
150°C
25°C
100
25°C
−55°C
0.1
150°C
10
1
−55°C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
3.6
3.2
2.8
2.4
2
100
10
f = 10 kHz
= 0 A
T = 25°C
A
I
E
−55°C
1
25°C
1.6
1.2
0.8
0.4
0
150°C
0.1
0.01
V
= 5 V
9
O
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
10
−55°C
25°C
1
150°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
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5
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
TYPICAL CHARACTERISTICS
NSBC114YF3
1
1000
I /I = 10
C
B
V
CE
= 10 V
150°C
25°C
25°C
100
−55°C
0.1
150°C
10
1
−55°C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
2.4
2
100
10
f = 10 kHz
= 0 A
T = 25°C
A
I
E
−55°C
1.6
1.2
0.8
0.4
0
1
25°C
0.1
0.01
150°C
V
O
= 5 V
6
0.001
0
10
20
30
40
50
0
1
2
3
4
5
7
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10
25°C
−55°C
1
150°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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6
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
NOM
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
H
E
1
2
b
e
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
SEE VIEW C
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
3
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
L1
H
A
E
q
L
STYLE 6:
A1
PIN 1. BASE
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
8
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
9
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX
0.70
A1 0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
M
D
0.20 (0.008) E
H
E
1.00 BSC
L
0.10
1.50
0.15
1.60
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
10
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER ASME
D
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
b1
−Y−
3
E
HE
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1
2
MILLIMETERS
2X b
3X
C
DIM MIN
A
b
b1
C
D
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X e
0.08 X Y
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
L
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H E
L
1.15
0.15
1.25
0.25
L2
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X 0.27
PACKAGE
OUTLINE
1.50
3X 0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
NOTES:
−X−
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
3
E
TOP VIEW
MILLIMETERS
A
DIM MIN
MAX
0.40
0.28
0.20
0.17
0.85
0.65
0.40
1.05
A
b
0.34
0.15
b1 0.10
c
D
E
e
0.07
0.75
0.55
0.35
0.95
H
c
E
H
E
SIDE VIEW
L
0.185 REF
L2 0.05
0.15
STYLE 1:
b
3X
L2
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.08 X Y
e
3X
L
2X
b1
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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