SMUN5231DW [SECOS]
NPN Multi-Chip Built-in Resistors Transistor; NPN多芯片内置电阻晶体管
| 型号： | SMUN5231DW |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Multi-Chip Built-in Resistors Transistor |
| 文件： | 总8页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMUN52XXDW
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
The BRT (Bias Resistor Transistor) contains a single transistor
with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them
into a single device. In the SMUN5211DW series, two BRT devices are
housed in the SOT–363 package which is ideal for low power surface
mount applications where board space is at a premium.
• Simplifies Circuit Design
SOT-363
8o
.055(1.40)
.047(1.20)
o
0
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.006(0.15)
.003(0.08)
MARKING DIAGRAM
.087(2.20)
.079(2.00)
6
5
4
.004(0.10)
6
5
4
.000(0.00)
R1
R2
Q2
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
7X
R2
Q1
R1
1
2
3
Dimensions in inches and (millimeters)
1
2
3
7X = Device Marking
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol
V CBO
V CEO
I C
Value
50
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
50
Vdc
100
mAdc
THERMAL CHARACTERISTICS
Max
Characteristic (One Junction Heated)
Symbol
P D
Unit
Note 2
Note 1
Total Device Dissipation
Derate above 25°C
mW
T A = 25°C
187
1.5
256
2.0
mW/°C
Thermal Resistance – Junction-to-Ambient
R
670
490
°C/W
JA
Max
Characteristic (Both Junctions Heated)
Symbol
Unit
Note 2
Note 1
T A = 25°C
Total Device Dissipation
Derate above 25°C
P D
250
2.0
mW
385
3.0
mW/°C
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
Junction and Storage Temperature
R θJA
493
188
°C/W
°C/W
°C
325
208
R θJL
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007 Rev. A
Page 1 of 8
SMUN52XXDW
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION
Device
Package
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
Marking
7A
R1(K)
10
R2(K)
10
Shipping
SMUN5211DW
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
7B
22
22
7C
47
47
7D
10
47
7E
10
open
open
1
7F
4.7
1
7G
7H
2.2
4.7
4.7
22
2.2
4.7
47
7J
7K
7L
47
7M
7N
2.2
100
47
47
100
22
7P
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2
Characteristic
)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V CB = 50 V, I E = 0)
I CBO
I CEO
I EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
nAdc
nAdc
mAdc
Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0)
–
Emitter-Base Cutoff Current
(V EB = 6.0 V, I C = 0)
SMUN5211DW
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
–
–
–
–
–
–
–
–
0.18
0.13
0.2
0.05
0.13
–
–
–
–
–
–
50
50
Collector-Base Breakdown Voltage (I C = 10 ∝A, I E = 0)
Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) V (BR)CEO
V (BR)CBO
–
Vdc
Vdc
–
–
4. Pulse Test: Pulse Width < 300 ∝s, Duty Cycle < 2.0%
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007 Rev. A
Page 2 of 8
SMUN52XXDW
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)
(Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(Note 5.)
DC Current Gain
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h FE
35
60
SMUN5211DW
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
60
100
140
140
350
350
5.0
15
(V CE = 10 V, I C = 5.0 mA)
80
80
160
160
3.0
8.0
15
30
80
200
150
140
150
140
80
80
80
80
Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat)
(I C= 10mA, I B= 5mA) SMUN5230DW/SMUN5231DW
(I C= 10mA, IB= 1mA) SMUN5215DW/SMUN5216DW
SMUN5232DW/SMUN5233DW/SMUN5234DW
–
–
0.25
Vdc
Output Voltage (on)
V OL
Vdc
SMUN5211DW
SMUN5212DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5213DW
SMUN5236DW
SMUN5237DW
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
(V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ)
–
–
–
–
–
–
–
–
–
(V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ)
(V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ)
(V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ)
–
–
–
Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ)
V OH
4.9
–
Vdc
(V CC = 5.0 V, V B = 0.05 V, R L = 1.0 kΩ)
(V CC = 5.0 V, V B = 0.25 V, R L = 1.0 kΩ)
S
MUN5230DW
MUN5215DW
S
SMUN5216DW
SMUN5233DW
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007 Rev. A
Page 3 of 8
SMUN52XXDW
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(Note 6.)
Input Resistor
SMUN5211DW
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
R 1
7.0
10
13
kΩ
15.4
32.9
7.0
22
28.6
61.1
13
47
10
7.0
10
13
3.3
4.7
1.0
2.2
4.7
4.7
22
6.1
0.7
1.3
1.5
2.9
3.3
6.1
3.3
6.1
15.4
1.54
70
28.6
2.86
130
61.1
2.2
100
47
32.9
Resistor Ratio
SMUN5211DW/SMUN5212DW
SMUN5213DW/SMUN5236DW
SMUN5214DW/SMUN5215DW
SMUN5216DW/SMUN5230DW
SMUN5231DW/SMUN5232DW
SMUN5233DW
R1 /R2
0.8
0.17
–
1.0
0.21
–
1.2
0.25
–
0.8
1.0
1.2
0.055 0.1
0.38 0.47
0.185
0.56
SMUN5234DW
0.038 0.047 0.056
1.7 2.1 2.6
SMUN5235DW
SMUN5237DW
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
300
250
200
150
100
50
833°C
0
–50
0
50
100
150
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007 Rev. A
Page 4 of 8
SMUN52XXDW
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5211DW
1
1000
0.1
100
0.01
0.001
10
0
20
40
50
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
Figure 2. V CE(sat) versus I C
100
10
4
3
2
1
1
0.1
0.01
0.001
0
0
0
1
2
3
4
5
6
7
8
9
10
10
20
30
40
50
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007 Rev. A
Page 5 of 8
SMUN52XXDW
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5212DW
10
1000
1
100
0.1
0.01
10
0
20
40
50
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
Figure 8. DC Current Gain
100
10
4
3
2
1
1
0.1
0.01
0.001
0
0
0
1
2
3
4
5
6
7
8
9
10
10
20
30
40
50
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input oltage
100
10
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007 Rev. A
Page 6 of 8
SMUN52XXDW
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5213DW
10
1000
1
100
0.1
0.01
10
0
20
40
50
1
10
100
I C , COLLECTOR CURRENT (mA)
C
, COLLECTOR CURRENT (mA)
I
Figure 12. V CE(sat) versus I C
Figure 13. DC Current Gain
1
100
10
0.8
0.6
0.4
0.2
0
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input oltage
100
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007 Rev. A
Page 7 of 8
SMUN52XXDW
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5214DW
1
300
250
200
150
100
50
0.1
0.01
0.001
0
0
20
40
60
80
1
2
3
4
5
10 15 20 40 50 60 70 80 90 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
Figure 18. DC Current Gain
4
3.5
3
100
2.5
2
10
1.5
1
0.5
0
0
1
0
1
2
3
4
5
6
7
8
9
10
2
4
6
8
10 15 20 25 30 35 40 45 50
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input oltage
10
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007 Rev. A
Page 8 of 8
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