RHRP30120 [ONSEMI]
30 A、1200 V 超高速二极管;型号: | RHRP30120 |
厂家: | ONSEMI |
描述: | 30 A、1200 V 超高速二极管 软恢复二极管 超快速软恢复二极管 局域网 PC |
文件: | 总5页 (文件大小:718K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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RHRP30120
Data Sheet
November 2013
Features
30 A, 1200 V, Hyperfast Diode
• Hyperfast Recovery trr = 85 ns (@ IF = 30 A)
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
The RHRP30120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
Packaging
PART NUMBER
PACKAGE
BRAND
RHR30120
JEDEC TO-220AC
RHRP30120
TO-220AC
ANODE
NOTE: When ordering, use the entire part number.
CATHODE
CATHODE
(FLANGE)
Symbol
K
A
o
Absolute Maximum Ratings T = 2 5
C
C
RHRP30120
UNIT
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
1200
1200
1200
30
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
F(AV)
(T = 78 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
60
A
A
FRM
FSM
(Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60 Hz)
300
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
125
30
W
D
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
-65 to 175
C
STG
J
©2001 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
1
Publication Order Number:
RHRP30120/D
RHRP30120
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITION
= 30 A
MIN
TYP
MAX
3.2
2.6
250
1
UNIT
V
I
I
F
V
-
-
-
-
-
-
-
-
-
-
-
F
o
= 3 0 A , T = 1 5 0
C
F
C
V
V
V
= 1200 V
R
R
I
-
µA
mA
ns
R
o
= 1200 V, T = 1 5 0
C
C
-
I
I
I
I
= 1 A , d i /dt = 100 A/µs
F
F
F
F
F
t
-
65
85
-
rr
= 3 0 A , d i /dt = 100 A/µs
F
-
ns
= 3 0 A , d i /dt = 100 A/µs
F
t
t
48
22
-
ns
a
= 3 0 A , d i /dt = 100 A/µs
F
-
ns
b
o
R
1.2
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
I
= Instantaneous reverse current.
R
T
= Reverse recovery time (See Figure 6), summation of t + t .
a b
rr
t
t
= Time to reach peak reverse current (See Figure 6).
a
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
through 25% of I
(See Figure 6).
RM
b
RM
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
Typical Performance Curves
200
100
500
100
o
175 C
10
o
1.0
100 C
o
175 C
10
o
0.1
0.01
100 C
o
25 C
o
25 C
0.001
1
0
200
400
, REVERSE VOLTAGE (V)
R
600
800
1000
1200
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V , FORWARD VOLTAGE (V)
V
F
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
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2
RHRP30120
Typical Performance Curves (Continued)
40
30
20
10
0
100
75
DC
t
rr
50
25
0
SQ. WAVE
t
a
t
b
25
50
75
100
175
125
150
1
10
I , FORWARD CURRENT (A)
30
o
T
, CASE TEMPERATURE ( C)
C
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 4. CURRENT DERATING CURVE
a
b
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
CONTROL dI /dt
R
G
F
L
t
t CONTROL I
2 F
1 AND
DUT
CURRENT
SENSE
dI
F
t
rr
R
I
F
G
dt
t
t
b
+
a
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 5. t TEST CIRCUIT
rr
FIGURE 6. t WAVEFORMS AND DEFINITIONS
rr
I
= 1.225A
MAX
L = 40mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
- V )]
DD
AVL
= IGBT (BV
R(AVL) R(AVL)
V
AVL
Q
> DUT V )
R(AVL)
1
CES
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
DD
I
V
Q
1
V
DUT
-
t
t
t
2
t
0
1
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
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3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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