RHRP3060 [ONSEMI]
30 A、600 V 超高速二极管;
| 型号： | RHRP3060 |
| 厂家： | 
ONSEMI |
| 描述： | 30 A、600 V 超高速二极管 软恢复二极管 超快速软恢复二极管 局域网 PC |
| 文件： | 总6页 (文件大小：628K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
RHRP3060
30 A, 600 V Hyperfast Diodes
Features
Description
•
•
•
•
•
Hyperfast Recovery trr = 45 ns (@ IF = 30 A)
Max Forward Voltage, VF = 2.1 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
The RHRP3060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are intended to
be used as freewheeling clamping diodes and diodes in a
variety of switching power supplies and other power
switching applications. Their low stored charge and
hyperfast soft recovery minimize ringing and electrical noise
in many power switching circuits reducing power loss in the
switching transistors.
RoHS Compliant
Applications
•
•
•
Switching Power Supplies
Power Switching Circuits
General Purpose
Ordering Informations
Part Number
Package
Brand
RHRP3060
TO-220AC-2L
RHRP3060
Pin Assignments
1. Cathode
2. Anode
TO-220
Absolute Maximum Ratings
Symbol
Parameter
RHRP3060
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
600
600
30
V
V
V
A
A
A
IF(AV)
IFRM
IFSM
Average Rectified Forward Current (TC = 120C)
Repetitive Peak Surge Current (Square Wave, 20KHz)
70
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)
325
PD
Maximum Power Dissipation
125
20
W
mJ
C
EAVL
Avalanche Energy (See Figures 10 and 11)
Operating and Storage Temperature
TJ, TSTG
-65 to 175
©2005 Semiconductor Components Industries, LLC.
November-2017, Rev. 3
1
Publication Order Number:
RHRP3060/D
Electrical Characteristics
T = 25°C unless otherwise noted
C
RHRP3060
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
VF
IF = 30 A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.7
-
V
V
IF = 30 A, TC = 150C
VR = 400 V
-
IR
-
-
A
A
mA
mA
ns
VR = 600 V
250
-
V
R = 400 V, TC = 150C
-
VR = 600 V, TC = 150C
IF = 1 A, dlF/dt = 200 A/s
IF = 30 A, dlF/dt = 200 A/s
IF = 30 A, dlF/dt = 200 A/s
IF = 30 A, dlF/dt = 200 A/s
IF = 30 A, dlF/dt = 200 A/s
VR = 600 V, IF = 0 A
-
1.0
40
45
-
trr
-
-
ns
ta
22
18
100
85
-
ns
tb
-
ns
QRR
-
nC
pF
C/W
CJ
-
RJC
DEFINITIONS
1.2
V
= Instantaneous forward voltage (pw = 300s, D = 2%)
F
I
t
t
t
= Instantaneous reverse current.
R
rr
a
= Reverse recovery time (See Figure 9), summation of t + t .
a
b
= Time to reach peak reverse current (See Figure 9).
= Time from peak I to projected zero crossing of I
based on a straight line from peak I
through 25% of I
(See Figure 9).
RM
b
RM
RM
RM
Q
= Reverse recovery charge.
RR
C
= Junction Capacitance.
J
R
= Thermal resistance junction to case.
JC
pw = pulse width.
D = Duty cycle.
www.onsemi.com
2
Typical Performance Characteristics
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Currnt vs Reverse Voltage
300
2000
175C
100
100
100C
100C
10
o
25 C
175C
10
1
0.1
25C
1
0.01
0
1
2
3
4
30
30
0
100
200
300
400
500
600
V
, FORWARD VOLTAGE (V)
F
V
, REVERSE VOLTAGE (V)
R
Figure 3. t , t and t Curves vs
Figure 4. t , t and t Curves vs
rr a b
rr
a
b
Forward Current
Forward Current
50
100
80
T
= 25C, dl /dt = 200A/s
F
T
= 100C, dl /dt = 200A/s
F
C
C
40
30
trr
trr
60
40
20
ta
ta
tb
10
0
20
0
tb
1
10
, FORWARD CURRENT (A)
1
10
I , FORWARD CURRENT (A)
F
30
I
F
Figure 5. t , t and t Curves vs
Figure 6. Current Derating Curve
rr
a
b
Forward Current
150
125
100
75
30
T
= 175C, dl /dt = 200A/s
F
C
25
20
DC
trr
SQ.WAVE
15
10
5
ta
50
25
0
tb
0
75
100
T
125
150
175
10
1
o
, CASE TEMPERATURE ( C)
I
, FORWARD CURRENT (A)
C
F
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3
Typical Performance Characteristics (Continued)
Figure 7. Junction Capacitance vs
Reverse Voltage
150
125
100
75
50
25
0
0
50
100
150
200
V
, REVERSE VOLTAGE (V)
R
Test Circuit and Waveforms
Figure 8. t Test Circuit
Figure 9. t Waveforms and Definitions
rr
rr
V
R
AMPLITUDE AND
GE
G
CONTROL dI /dt
F
L
t
t
CONTROL I
F
1 AND
2
dI
dt
F
t
rr
I
F
DUT
CURRENT
SENSE
t
t
b
a
R
G
0
+
V
V
DD
GE
-
IGBT
0.25 I
RM
t
1
I
RM
t
2
Figure 10. Avalanche Energy Test Circuit
Figure 11. Avalanche Current and Voltage
Waveforms
I = 1A
L = 40mH
R < 0.1Ω
V
AVL
2
E
= 1/2LI [V
/(V
R(AVL)
> DUT V )
R(AVL)
- V )]
DD
AVL
R(AVL)
CES
Q
= IGBT (BV
1
L
R
I
I
L
L
+
V
CURRENT
SENSE
I
V
DD
Q
1
V
DD
t
t
t
2
t
0
1
DUT
-
www.onsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
相关型号：
RHRP3060_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, TO-220AC, 2 PIN
FAIRCHILD
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