RHRG5060 [ONSEMI]
50A，600V，极快二极管;
| 型号： | RHRG5060 |
| 厂家： | 
ONSEMI |
| 描述： | 50A，600V，极快二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总6页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hyperfast Diode
50 A, 600 V
RHRG5060
Description
The RHRG5060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes
and is silicon nitride passivated ionimplanted epitaxial planar
construction. These devices are intended to be used
as freewheeling/ clamping diodes and diodes in a variety of switching
power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power
loss in the switching transistors.
www.onsemi.com
CATHODE
Features
ANODE
• Hyperfast Recovery ( t = 50 ns (@ I = 50 A )
rr
F
JEDEC STYLE
TO−247
• Max Forward Voltage( V = 2.1 V (@ T = 25 °C )
F
C
340CL
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
MARKING DIAGRAM
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
$Y&Z&3&K
RHRG5060
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
600
600
600
50
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Average Rectified Forward Current
I
A
F(AV)
(T = 93 °C)
C
Repetitive Peak Surge Current
(Square Wave, 20 kHz)
I
100
500
A
A
FRM
RHRG5060
= Specific Device Code
Nonrepetitive Peak Surge Current
(Halfwave 1 Phase, 60 Hz)
I
FSM
Maximum Power Dissipation
P
150
40
W
D
Avalanche Energy
(See Figure 10 and Figure 11)
E
AVL
mJ
1. Cathode
2. Anode
Operating and Storage Temperature
T
STG,
T
J
−65 to
+175
°C
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
July, 2021 − Rev. 4
RHRG5060/D
RHRG5060
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Package
Brand
RHRG5060
TO−247−2L
RHRG5060
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
I = 50 A
Min
Typ
Max
2.1
Unit
V
V
F
Instantaneous Forward Voltage
(Pulse Width = 300 ms, Duty Cycle = 2%)
F
I = 50 A,
1.7
V
F
C
T
= 150°C
I
R
Instantaneous Reverse Current
V
V
= 600 V
250
1.5
mA
R
= 600 V
= 150°C
mA
R
C
T
t
Reverse Recovery Time (See Figure 9 )
Summation of t + t
I = 1 A,
F
45
50
ns
ns
ns
ns
rr
F
dl /dt = 100 A/ms
a
b
I = 50 A,
F
dI /dt = 100 A/ms
F
t
t
Time to Reach Peak Reverse Current (See Figure 9)
Time from Peak I to Projected Zero Crossing of I
I = 50 A,
25
20
a
F
dI /dt = 100 A/ms
F
I = 50 A,
b
RM
RM
F
Based on a Straight Line from Peak I
Through 25%
dI /dt = 100 A/ms
RM
F
of I
(See Figure 9)
RM
Q
Reverse Recovery Charge
Junction Capacitance
I = 50 A,
F
65
nC
pF
rr
F
dI /dt = 100 A/ms
C
V
F
= 10 V,
140
J
R
I = 0 A
R
Thermal Resistance Junction to Case
1.0
°C/W
q
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
RHRG5060
TYPICAL PERFORMANCE CURVES
300
100
3000
1000
o
175 C
100
10
1
o
100 C
o
o
o
175 C
100 C
25 C
10
o
25 C
0.1
1
0.01
0
0.5
12
1.5
2.5
0
100
200
300
400
500
600
3
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Reverse Voltage
150
60
50
o
o
T
= 100 C, dI /dt = 100A/ms
T
= 25 C, dI /dt = 100A/ms
C
F
C
F
125
100
75
50
25
0
T
T
rr
rr
40
30
t
a
t
a
20
10
0
t
b
t
b
1
1
10
50
10
50
I , Forward Current (A)
F
I , Forward Current (A)
F
Figure 3. Trr, ta and tb Curves vs. Forward Current
Figure 4. Trr, ta and tb Curves vs. Forward Current
50
40
250
o
T
= 175 C, dI /dt = 100A/ms
C
F
200
T
rr
DC
SQ. WAVE
30
20
150
100
50
t
a
t
10
0
b
0
1
175
25
50
125
10
50
75
100
150
I , Forward Current (A)
F
T , Case Temperature (5C)
C
Figure 5. Trr, ta and tb Curves vs. Forward Current
Figure 6. Current Derating Curve
www.onsemi.com
3
RHRG5060
TYPICAL PERFORMANCE CURVES (continued)
350
300
250
200
150
100
50
0
0
50
100
150
200
V , Reverse Voltage (V)
R
Figure 7. Junction Capacitance vs. Reverse Voltage
TEST CIRCUITS AND WAVEFORMS
V
GE
AMPLITUDE AND
R
CONTROL dl /dt
G
F
L
t AND t CONTROL I
1
2
F
DUT
CURRENT
SENSE
dI
F
T
rr
R
G
I
F
dt
t
t
b
+
a
V
GE
0
V
−
DD
IGBT
t
1
0.25I
RM
t
2
I
RM
Figure 8. Trr Test Circuit
Figure 9. Trr Waveforms and Definitions
I = 1 A
L = 40 mH
R < 0.1 W
2
E
AVL
= 1/2LI [V
/(V −V )]
R(AVL) R(AVL) DD
Q = IGBT (BV
> DUT V
)
V
AVL
1
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
t
2
t
0
1
Figure 10. Avalanche Energy Test Circuit
Figure 11. Avalanche Current and Voltage Waveforms
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
RHRG5060_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, TO-247
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明