RHRG5060-F085 [ONSEMI]
600 V、50 A、1.67 V、TO-247(2 引脚)超高速整流器;型号: | RHRG5060-F085 |
厂家: | ONSEMI |
描述: | 600 V、50 A、1.67 V、TO-247(2 引脚)超高速整流器 软恢复二极管 超快速软恢复二极管 局域网 软恢复能力电源 超快速软恢复能力电源 |
文件: | 总7页 (文件大小:7503K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Hyperfast Rectifier
50 A, 600 V
RHRG5060-F085
Description
The RHRG5060−F085 is an hyperfast diode with softrecovery
characteristics (trr < 45ns). It has half the recovery time of ultrafast
diode and is of silicon nitride passivated ion−implanted epitaxial
planar construction.
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This device is intended for use as a freewheeling/clamping diode
and rectifier in a variety of automotive switching power supplies
and other power switching automotive applications. Its low stored
charge and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power loss
in the switching transistors.
CATHODE
ANODE
Features
• High Speed Switching ( t = 45 ns (Typ.) @ I = 50 A )
TO−247−2L
340CL
rr
F
• Low Forward Voltage( V = 1.67 V (Typ.) @ I = 50 A )
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified
• This Device is Pb−Free
MARKING DIAGRAM
Applications
$Y&Z&3&K
RHRG5060
• Switching Power Supply
• Power Switching Circuits
• General Purpose
• Automotive and General Purpose
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
600
600
600
50
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
$Y
= ON Semiconductor Logo
V
V
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
V
R
V
Average Rectified Forward Current
I
A
F(AV)
RHRG5060
= Specific Device Code
@ T = 25 °C
C
Non−repetitive Peak Surge Current
I
150
40
A
FSM
(Halfwave 1 Phase 50 Hz)
Avalanche Energy
(1.4 A, 40 mH)
E
mJ
°C
AVL
1. Cathode
2. Anode
Operating Junction and Storage
Temperature
T
T
−55 to
+175
J, STG,
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
March, 2020 − Rev. 4
RHRG5060−F085/D
RHRG5060−F085
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Max
0.42
45
Units
°C/W
°C/W
R
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
q
JC
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tube
Quantity
RHRG5060
RHRG5060−F085
TO−247
−
30
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
−
Max.
250
1.5
Unit
uA
mA
V
I
R
Instantaneous Reverse Current
V
= 600 V
T
C
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
= 175°C
−
−
−
R
−
V
FM
Instantaneous Forward Voltage
Reverse Recovery Time
I = 50 A
F
1.67
2.1
(Note 1)
−
−
1.29
37
1.7
45
V
I = 1 A,
F
T
C
= 25°C
t
rr
ns
di/dt = 100 A/ms,
(Note 2)
V
CC
= 390 V
I = 50 A,
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
F
−
45
60
ns
ns
di/dt = 100 A/ms,
V
CC
= 390 V
−
−
200
−
ta
tb
rr
Reverse Recovery Time
I = 50 A,
25
20
45
−
−
−
ns
ns
nC
F
di/dt = 100 A/ms,
Q
Reverse Recovery Charge
V
CC
= 390 V
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
RHRG5060−F085
TEST CIRCUITS AND WAVEFORMS
V
GE
AMPLITUDE AND
R
CONTROL dl /dt
G
F
L
t AND t CONTROL I
1
2
F
DUT
CURRENT
SENSE
dI
F
T
rr
R
G
I
F
dt
t
t
b
+
a
V
GE
0
V
−
DD
IGBT
t
1
0.25I
RM
t
2
I
RM
Figure 1. Trr Test Circuit
Figure 2. Trr Waveforms and Definitions
I = 1 A
L = 40 mH
R < 0.1 W
2
E
AVL
= 1/2LI [V
/(V −V )]
R(AVL) R(AVL) DD
Q = IGBT (BV
> DUT V
)
V
AVL
1
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
t
2
t
0
1
Figure 3. Avalanche Energy Test Circuit
Figure 4. Avalanche Current and Voltage Waveforms
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3
RHRG5060−F085
TYPICAL PERFORMANCE CHARECTERISTICS
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
Figure 6. Typical Reverse Current vs.
Reverse Voltage
V , Reverse Voltage (V)
R
di/dt (A/ms)
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse Recovery Time vs. di/dt
T , Case Temperature (5C)
C
di/dt (A/ms)
Figure 9. Typical Reverse Recovery Current vs. di/dt
Figure 10. Forward Current Derating Curve
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4
RHRG5060−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
di/dt, (A/ms)
Figure 11. Reverse Recovery Charge
t , Square Wave Pulse Duration (s)
1
Figure 12. Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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相关型号:
RHRG5060_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, TO-247
FAIRCHILD
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