PCGA200T65NF8 [ONSEMI]
IGBT，650 V，200 A 场截止沟槽;
| 型号： | PCGA200T65NF8 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650 V，200 A 场截止沟槽 双极性晶体管 |
| 文件： | 总6页 (文件大小：459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
May 2016
PCGA200T65NF8
650 V, 200 A Field Stop Trench IGBT
Features
AEC-Q101 Qualified
Max Junction Temperature 175°C
Positive Temperature Co-efficient
Ease of Paralleling
Short Circuit Rated
Very Low Saturation Voltage: VCE(SAT) = 1.53V
(Typ.) @ IC = 200A
Optimized for Motor Control Applications
Applications
Automotive Traction Modules
General Power Modules
Ordering Information
P/N
PCGA200T65NF8
Packing
Wafer (Sawn-On-Foil)
mils
394 X 394
2 x (169 x 340)
55 x 55
μm
Die Size
Emitter Attach Area
Gate pad Attach Area
Die thickness
10,000 X 10,000
2 x (4,300 x 8,640)
1,400 x 1,400
78
3
Top Metal
Al (0.5% Cu, 0.8% Si)
Back Metal
Al/VNi/Ag
Topside Passivation
Wafer diameter
Silicon Nitride Plus Polymide
200mm
234
Max Possible Die Per Wafer
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©2016 Fairchild Semiconductor Corporation
PCGA200T65NF8 Rev. 1.0
1
Absolute Maximum Ratings (TVJ= 25oC unless otherwise noted)
Symbol Parameter
Units
V
Ratings
650
VCES
VGES
IC
Collector to Emitter Voltage
Gate-to-Emmiter Voltage
±20
V
Collector Current, limited by TVJ max
(Note 1)
600
A
ICM
Pulsed Collector Current, VGE=15V, limited by TVJ max
ShortCircuitWithstandTime,VGE=15V,VCE≤400V, TVJ≤1 5 0 º C
Operating Junction Temperature
A
SCWT
TVJ
5
μs
oC
oC
-40 to +175
+17 to +25
Tstg
Storage Temperature Range
Notes:
1: Depends on the thermal properties of assembly
Electrical Characteristics of the IGBT (TVJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Static Characteristics (Tested on wafers)
BVCES
VCE(SAT)
VGE(th)
ICES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA
650
-
1.25
5.5
-
-
V
V
Collector to Emitter Saturation Voltage
G-E Threshold Voltage
IC = 100A, VGE = 15V
VGE = VCE, IC = 200mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
4.5
-
1.75
6.5
V
Collector Cut-Off Current
G-E Leakage Current
40
μA
nA
IGES
-
-
±400
Electrical Characteristics (Not subject to production test, verified by design /characterization)
TVJ = 25oC
-
-
1.53
2.04
1.9
-
V
V
IC = 200A, VGE
15V
=
VCE(SAT)
Collector to Emitter Saturation Voltage
TVJ
=
175oC
CIES
COES
CRES
RG
Input Capacitance
-
-
-
-
-
9600
445
78
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
V
DS = 30V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Total Gate Charge
f = 1MHz
f = 1MHz
2.0
229
66
QG(ToT)
QGE
QGC
td(on)
tr
VCE = 400V, IC = 200A
VGE = 15V
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Delay Time
Rise Time
-
-
64
VCE = 400V,
IC = 200A,
R
VGE = +15V,
Inductive Load
TVJ = 25oC
-
67
-
-
233
118
G = 5Ω,
td(off)
Turn-Off Delay Time
tf
Fall Time
-
177
-
ns
td(on)
tr
Turn-On Delay Time
Rise Time
VCE = 400V,
-
-
-
64
-
-
-
ns
ns
ns
I
C = 200A,
236
124
RG = 5Ω,
td(off)
Turn-Off Delay Time
VGE = +15V,
Inductive Load
TVJ = 175oC
tf
Fall Time
-
208
-
ns
For ordering, technique and other information on Fairchild automotive bare die products, please contact
automotivedie@fairchildsemi.com
www.fairchildsemi.com
2
©2016 Fairchild Semiconductor Corporation
PCGA200T65NF8 Rev. 1.0
May 2016
Physical Dimensions Dimensionis in micrometer unless otherwise noted
www.fairchildsemi.com
©2016 Fairchild Semiconductor Corporation
PCGA200T65NF8 Rev. 1.0
3
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and Better™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I77
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©2016 Fairchild Semiconductor Corporation
4
PCGA200T65NF8 Rev. 1.0
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
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IGBT 650 V, 300 A Field Stop Trench Gen3 (FS3) Bare Die with Solderable/Sinterable Top Metal. Pairing with PCRKA30065F8M1
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