PCGA300T65DF8M1 [ONSEMI]
IGBT 650 V, 300 A Field Stop Trench Gen3 (FS3) Bare Die with Solderable/Sinterable Top Metal. Pairing with PCRKA30065F8M1;
| 型号： | PCGA300T65DF8M1 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 650 V, 300 A Field Stop Trench Gen3 (FS3) Bare Die with Solderable/Sinterable Top Metal. Pairing with PCRKA30065F8M1 PC 双极性晶体管 |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PCGA300T65DF8M1ꢀ
650 V, 300 A Field Stop
Trench IGBT with Solderable
Top Metal
www.onsemi.com
Features
C
• AEC−Q101 Qualified
• Maximum Junction Temperature 175_C
• Positive Temperature Coefficient
• Easy Paralleling
G
TSA
TSK
CSE
• Short Circuit Rated
E
• Very Low Saturation Voltage: VCE(SAT) = 1.5 V
(Typ.) @ IC = 300 A
• Optimized For Motor Control Applications
• Integrated Temp Sensor And Current Sensor
• Emitter Pad Covered With Solderable Metal Layer
Applications
• Automotive Traction modules
• General Power Modules
ORDERING INFORMATION
Part Number
PCGA300T65DF8M1
Water (sawn on foil)
Packing
mils
472 × 472
3 × (141 × 383)
6 × (27 × 39)
3
mm
Die Size
12,000 × 12,000
3 × (3,580 × 9,720)
6 × (680 × 980)
78
Emitter Attach Area
Gate / Sensor Pad Attach Area
Die Thickness
Top Metal
5 um AlSiCu + 1.15 um Ti/NiV/Ag (STM)
Back Metal
0.65 um NiV/Ag
Silicon Nitride plus Polyimide
200 mm
Topside Passivation
Wafer Diameter
Max Possible Die Per Wafer
136
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
November, 2017 − Rev. 2
PCGA300T65DF8M1/D
PCGA300T65DF8M1
ABSOLUTE MAXIMUM RATINGS (T = 25_C unless otherwise noted)
VJ
Parameter
Symbol
Ratings
Units
Collector−Emitter Voltage
Gate−Emitter Voltage
V
V
650
V
CES
20
(Note 1)
900
V
A
GES
DC Collector Current, limited by TVJ max
IC
I
A
Pulsed Collector Current, VGE=15 V, tp limited by TVJ max (Note 2)
Short Circuit Withstand Time, V = 15 V, V ≤ 400 V, T ≤ 150_C
CM
ms
_C
_C
t
5
sc
GE
CE
VJ
T
−40 to +175
+17 to +25
Operating Junction Temperature
VJ
Tstg
Storage Temperature Range
1. Depends on the thermal properties of assembly
2. Not subject to production test − verified by design/characterization
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
VJ
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static Characteristics (Tested on wafers)
Collector−Emitter Breakdown Voltage
BV
V
= 0 V, I = 1 mA
650
−
−
1.25
5.5
−
−
V
V
CES
GE
C
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Collector Cut−Off Current
V
I
C
= 100 A, V = 15 V
1.55
6.5
40
CE(SAT)
GE
V
GE(th)
V
GE
V
CE
V
GE
= V , I = 300 mA
4.5
−
V
CE
C
I
= V
= V
, V = 0 V
mA
nA
V
CES
CES
GE
Gate Leakage Current
I
, V = 0 V
−
−
400
2.8
GES
GES
CE
On−chip temperature − sense diode
voltage
V
2.0
2.4
F
I = 0.5 mA
F
Integrated Temp and Current Sensor Characteristics
(not subjected to production test − verified by design / characterization)
On−chip temperature−sense diode
V
−
1.9
−
−
V
I = 0.5 mA, T = 100 _C
F
F
VJ
voltage
Emitter Sense Area Ratio
b
Sense Area/Total Area
= 300 A, V = 15 V
1/10K
18K
−
−
AREA
Emitter Current Sense Ratio
b
10
I
−
W
CE
SENSE
GE
= 10 W
R
Electrical Characteristics (Not subjected to production test − verified by design/characterization)
Collector to Emitter Saturation Voltage
V
I
= 300 A,
GE
−
−
−
1.5
1.8
14.0
690
106
1.7
307
97
1.9
−
V
T
= 25 _C
CE(SAT)
C
V
VJ
VJ
= 15 V
V
T
= 175 _C
Input Capacitance
C
−
nF
pF
pF
W
IES
V
= 30 V, V = 0 V
CE
GE
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Total Gate Charge
C
OES
C
RES
f = 1 MHz
−
−
−
−
−
−
−
−
−
−
−
R
f = 1 MHz
G
Q
nC
nC
nC
ns
ns
ns
ns
G(Total)
V
V
= 400 V, I = 300 A
= 15 V
CE
GE
C
Gate−to−Emitter Charge
Gate−to−Collector Charge
Turn−On Delay Time
Rise Time
Q
GE
Q
GC
−
−
−
−
−
−
64
t
167
107
298
38
d(on)
V
= 300 V, I = 300 A
CE
G
GE
C
R
= 15 W
t
r
V
= 15 V
Turn−Off Delay Time
Fall Time
t
d(off)
Inductive Load
T
= 25 _C
VJ
t
f
www.onsemi.com
2
PCGA300T65DF8M1
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
VJ
Turn−On Delay Time
Rise Time
t
−
−
−
−
130
93
−
−
−
−
ns
ns
ns
ns
d(on)
V
= 300 V, I = 300 A
CE
G
C
R
= 15 W
t
r
V
GE
= 15 V
Turn−Off Delay Time
Fall Time
t
395
78
Inductive Load
d(off)
T
VJ
= 150 _C
t
f
3. For ordering, technique and other information on Onsemi automotive bare die products, please contact automotivebaredie@onsemi.com
Figure 1. Dimensional Outline and Pad Layout
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3
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