PCFA86210F [ONSEMI]
Power MOSFET, N-Channel, 150 V, 6.1 mΩ, Bare Die;![PCFA86210F](http://pdffile.icpdf.com/pdf2/p00361/img/icpdf/PCFA86210F_2210642_icpdf.jpg)
型号: | PCFA86210F |
厂家: | ![]() |
描述: | Power MOSFET, N-Channel, 150 V, 6.1 mΩ, Bare Die |
文件: | 总7页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MOSFET – Power, N-Channel
150 V, 6.1 mW
PCFA86210F
Features
• Typical R
• Typical Q
= 4.8 mꢀ at V = 10 V
GS
DS(on)
www.onsemi.com
= 70 nC at V = 10 V
g(tot)
GS
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
DIMENSION (mm)
Die Size
6096 × 4445
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
6076 15 × 4425 15
5435.3 × 4138
318.6 × 520
ORDERING INFORMATION
203.2 25.4
Device
Package
Gate and Source: AlSiCu
Drain: Ti−NiV−Ag (back side of die)
Passivation: Polyimide
PCFA86210F
Wafer
Sawn on Foil
Wafer Diameter: 8 inch
Wafer sawn on UV Tape
Bad dice identified in inking
Gross Die Counts: 961
RECOMMENDED STORAGE CONDITIONS
Temperature
RH
22 to 28°C
40 to 66%
The Chip is 100% Probed to Meet the Conditions and Limits
Specified at T = 25°C.
J
Symbol
BV
Parameter
Condition
I = 250 ꢁ A, V = 0 V
D
Min
150
−
Typ
−
Max
−
Unit
V
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Bare Die Drain to Source On Resistance
Source to Drain Diode Voltage
DSS
GS
I
V
DS
V
GS
V
GS
= 150 V, V = 0 V
−
1
ꢁ A
nA
V
DSS
GS
I
=
20 V, V = 0 V
−
−
100
4.0
6.1
1.25
GSS
DS
V
GS(th)
= V , I = 250 ꢁ A
2.0
−
−
DS
D
*R
I
I
= 5 A, V = 10 V
4.8
−
mꢀ
DS(on)
D
GS
V
SD
= 5 A, V = 0 V
−
V
SD
GS
*Accurate R
test at die level is not feasible as limited by the test contact precision attainable in a die form. The max R
specification
performance
DS(on)
DS(on)
DS(on)
is defined from the historical performance of the die in package but is not guaranteed by test in production. The die R
depends on the Source wire/ribbon bonding layout.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2021 − Rev. 1
PCFA86210F/D
PCFA86210F
MOSFET MAXIMUM RATINGS in Reference to the FDBL86210−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Ratings
150
Unit
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current R
V
GS
20
V
I
D
(V = 10) (Note 1)
GS
A
ꢂ JC
T
C
T
C
= 25°C
169
119
= 100°C
E
Single Pulse Avalanche Energy (Note 2)
502
500
mJ
W
AS
P
Power Dissipation R
D
ꢂ
JC
Derate Above 25°C
3.3
W/°C
°C
T , T
Operating and Storage Temperature
−55 to +175
0.3
J
STG
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 3)
°C/W
°C/W
ꢂ
JC
R
43
ꢂ
JA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting T = 25°C, L = 0.24 mH, I = 64 A
J
AS
3. R
is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
ꢂ
JA
mounting surface of the drain pins. R
presented here is based on mounting on a 1 in pad of 2oz copper.
is guaranteed by design, while R
is determined by the board design. The maximum rating
ꢂ
ꢂ
JC
JA
2
ELECTRICAL CHARACTERISTICS in Reference to the FDBL86210−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
I
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
I
= 250 ꢁ A, V = 0 V
150
−
−
−
−
−
−
1
V
DSS
D
GS
V
V
= 150 V,
= 0 V
T = 25°C
J
ꢁ A
mA
nA
DSS
DS
GS
T = 175°C (Note 4)
J
−
1
I
Gate to Source Leakage Current
V
=
20 V
−
100
GSS
GS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
V
I
= V , I = 250 ꢁ A
2.0
−
3.0
5
4.0
6.3
V
GS(th)
GS
DS
D
Drain to Source On−Resistance
= 80 A,
= 10 V
T = 25°C
J
mꢀ
ꢀ
DS(on)
D
V
GS
T = 175°C (Note 4)
−
14
17.5
m
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 75 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
5805
536
16
−
−
−
−
−
−
−
−
pF
iss
DS
GS
C
Output Capacitance
pF
pF
ꢀ
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 1 MHz
2.2
70
g
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 to 10 V, V = 75 V, I = 80 A
nC
nC
nC
nC
g(ToT)
DD
D
Q
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
= 0 to 2 V, V = 75 V, I = 80 A
11
g(th)
DD
D
Q
= 75 V, I = 80 A
32
gs
D
Q
10
gd
SWITCHING CHARACTERISTICS
t
Turn−On Delay
Rise Time
V
DD
V
GS
= 75 V, I = 80 A,
−
−
−
−
39
30
70
23
−
−
−
−
ns
ns
ns
ns
d(on)
D
= 10 V, R
= 6 ꢀ
GEN
t
r
t
Turn−Off Delay
Fall Time
d(off)
t
f
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2
PCFA86210F
ELECTRICAL CHARACTERISTICS in Reference to the FDBL86210−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DRAIN−SOURCE DIODE CHARACTERISTIC
V
Source to Drain Diode Voltage
I
I
= 80 A, V = 0 V
−
−
−
−
−
1.25
1.2
−
V
V
SD
SD
GS
= 40 A, V = 0 V
−
SD
GS
t
Reverse Recovery Time
I = 80 A, dI /dt = 100 A/ꢁ s,
F
V
108
323
ns
nC
rr
SD
= 120 V
DD
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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3
PCFA86210F
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
160
120
80
40
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
T , Case Temperature [5C]
C
T , Case Temperature [5C]
C
Figure 1. Normalized Power Dissipation
vs. Case Temperature
Figure 2. Maximum Continuous Drain
Current vs. Case Temperature
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
NOTES:
Duty factor: D = t /t
1
2
SINGLE PULSE
Peak T = P
× Z
ꢂ
(t) × R
(t) + T
JC C
ꢂ
J
DM
JC
0.01
10−5
10−4
10−3
10−2
t, Rectangular Pulse Duration (s)
10−1
100
101
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10 V
T
C =
25°C
For temperatures
above 25°C derate peak
current as follows:
1000
100
10
175 * T
C
Ǹ
I + I ƪ ƫ
2
150
SINGLE PULSE
10−5
10−4
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (s)
Figure 4. Peak Current Capability
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4
PCFA86210F
TYPICAL CHARACTERISTICS (continued)
1000
If R = 0
1000
100
10
t
= (L)(I ) / (1.3 × Rated BV
V
)
AV
AS
DSS − DD
If R ≠ 0
= (L/R)ln[(I × R) / (1.3 × Rated BV
t
V
) + 1]
AV
AS
DSS − DD
100
10
1
100us
1ms
Operation in this
area may be
Starting T
25°C
J =
limited by r
DS(on)
1
SINGLE PULSE
Starting T 150°C
J =
T
T
max rated
25°C
J =
10ms
100ms
C =
0.1
1
10
100
0.001 0.01
0.1
1
10
100
1000 10000
V
DS
, Drain to Source Voltage [V]
t , Time in Avalanche [ms]
AV
Refer to ON Semiconductor Application Notes AN7514 and AN7515.
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
200
160
120
80
300
Pulse duration = 80 ꢁs
Duty cycle = 0.5% MAX
VGS = 0 V
100
V
DD =
5 V
TJ = 175 o
C
TJ = 25 o
C
10
1
TJ = 175 oC
TJ = −55 o
C
TJ = 25 o
C
40
0
0.1
0.0
2
3
4
5
6
7
8
0.2
V
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate to Source Voltage [V]
, Body Diode Forward Voltage [V]
SD
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
250
200
150
100
50
300
V
GS
15 V Top
10 V
8 V
7 V
6 V
250
200
150
100
50
VGS
15V Top
10V
8V
7V
6V
5.5 V
5 V Bottom
5.5V
5V Bottom
5V
5V
80 ꢁs Pulse Width
80 ꢁs Pulse Width
T
J =
175°C
T
J =
25°C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain to Source Voltage [V]
V
DS
, Drain to Source Voltage [V]
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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5
PCFA86210F
TYPICAL CHARACTERISTICS (continued)
3.0
50
40
30
= 80A
ID
Pulse duration = 80 ꢁs
Duty cycle = 0.5% MAX
Pulse duration = 80 ꢁs
Duty cycle = 0.5% MAX
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 175 o
C
20
10
0
ID = 80A
VGS = 10V
TJ = 25 o
C
6
−80
−40
0
40
80
120
160
200
2
4
8
10
V
GS
, Gate to Source Voltage [V]
T , Junction Temperature [5C]
J
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.5
1.10
1.05
1.00
0.95
0.90
= VDS
VGS
ID = 1mA
I
= 250 ꢁ A
D
1.2
0.9
0.6
0.3
0.0
−80
−40
0
40
80
120
−80
−40
0
40
80
120
160
200
160
200
T , Junction Temperature [5C]
J
T , Junction Temperature [5C]
J
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
1000
100
10
10
D = 80A
I
Ciss
VDD =60V
VDD = 75V
8
VDD = 90V
6
4
Coss
Crss
2
0
f = 1MHz
VGS
= 0V
1
0.1
1
10
100 200
0
20
40
60
80
Q , Gate Charge [nC]
g
V
DS
, Drain to Source Voltage [V]
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
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6
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