PACDN004 [ONSEMI]

2-Channel ESD Protection Array; 2通道ESD保护阵列
PACDN004
型号: PACDN004
厂家: ONSEMI    ONSEMI
描述:

2-Channel ESD Protection Array
2通道ESD保护阵列

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中文:  中文翻译
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2-Channel ESD Protection Array  
PACDN004  
Features  
Product Description  
Two channels of ESD protection  
The PACDN004 is a diode array designed to provide  
two channels of ESD protection for electronic  
components or sub-systems. Each channel consists  
of a pair of diodes which steers the ESD current  
pulse either to the positive (VP) or negative (VN)  
supply. The PACDN004 will protect against ESD  
pulses up to 15kV Human Body Model, and 8kV  
contact discharge per International Standard IEC  
61000-4-2.  
+8kV contact, +15kV air ESD protection  
per channel (IEC 61000-4-2 standard)  
+15kV of ESD protection per channel (HBM)  
Low loading capacitance of 3 pF typical  
Low leakage current is ideal for battery-powered  
devices  
Miniature 4-pin SOT-143 package  
RoHS compliant (lead-free) finishing  
Applications  
This device has identical characteristics as the  
PACDN006 (6-channel array). They can be used  
together in order to provide a larger number of  
protected inputs if required. This device is particularly  
well-suited for a wide range of portable electronics  
(e.g. cellular phones, PDAs, notebook computers)  
because of its small package footprint, high ESD  
protection level and low loading capacitance. It is  
also suitable for protecting video output lines and I/O  
ports in computers and peripherals.  
Consumer electronic products  
Cellular phones  
PDAs  
Notebook computers  
Desktop PCs  
Digital cameras and camcorders  
VGA (video) port protection for desktop  
and portable PCs  
The PACDN004 is available with RoHS compliant  
lead-free finishing.  
©2010 SCILLC. All rights reserved.  
May 2010 Rev. 3  
Publication Order Number:  
PACDN004/D  
PACDN004  
Rev. 3 | Page 2 of 9 | www.onsemi.com  
PACDN004  
PIN DESCRIPTIONS  
PIN  
NAME  
TYPE  
DESCRIPTION  
1
VN  
CH1  
CH2  
VP  
Gnd  
Negative voltage supply rail or ground reference rail  
ESD Channel 1  
2
3
4
I/O  
I/O  
ESD Channel 2  
Supply  
Positive voltage supply rail  
Ordering Information  
PART NUMBERING INFORMATION  
Pins  
Package  
SOT-143  
Ordering Part Number1  
Part Marking  
4
PACDN004SR  
D014  
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.  
Specifications  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
RATING  
UNITS  
Supply Voltage (VP - VN)  
6.0  
V
Diode Forward DC Current (Note 1)  
Operating Temperature Range  
Storage Temperature Range  
DC Voltage at any channel input  
Package Power Rating  
20  
mA  
°C  
-40 to +85  
-65 to +150  
°C  
(VN - 0.5) to (VP + 0.5)  
225  
V
mW  
Note 1: Only one diode conducting at a time.  
Rev. 3 | Page 3 of 9 | www.onsemi.com  
PACDN004  
STANDARD OPERATING CONDITIONS  
PARAMETER  
RATING  
UNITS  
Operating Temperature Range  
-40 to +85  
0 to 5.5  
°C  
Operating Supply Voltage (VP - VN)  
V
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)  
SYMBOL PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
IP  
Supply Current  
(VP-VN)=5.5V  
10  
μA  
VF  
Diode Forward Voltage  
Channel Leakage Current  
Channel Input Capacitance  
IF = 20mA  
0.65  
0.95  
+1.0  
5
V
ILEAK  
CIN  
+0.1  
3
μA  
pF  
@ 1 MHz, VP=5V,  
VN=0V, VIN=2.5V  
VESD  
ESD Protection  
Peak Discharge Voltage at any  
channel input, in system  
a) Human Body Model, MIL-STD-  
883, Method 3015  
b) Contact discharge per  
IEC 61000-4-2 standard  
c) Air discharge per IEC 61000-4-2  
Note 2  
Notes 2 and 3  
Notes 2 and 4  
Notes 2 and 4  
+15  
+8  
kV  
kV  
kV  
+15  
VCL  
Channel Clamp Voltage  
@15kV ESD HBM;  
Notes 2 and 3  
Positive Transients  
Negative Transients  
VP + 13.0  
VN - 13.0  
V
V
Note 1: All parameters specified at TA=25°C unless otherwise noted. VP = 5V, VN = 0V unless noted.  
Note 2: From I/O pins to VP or VN only. VP bypassed to VN with a 0.22μF ceramic capacitor (see Application Information for  
more details).  
Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 5.0V, VN grounded.  
Note 4: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 5.0V, VN grounded.  
Rev. 3 | Page 4 of 9 | www.onsemi.com  
PACDN004  
Performance Information  
Input Capacitance vs. Input Voltage  
Rev. 3 | Page 5 of 9 | www.onsemi.com  
PACDN004  
Application Information  
Design Considerations  
In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to  
minimize parasitic series inductances on the Supply/Ground rails as well as the signal trace segment  
between the signal input (typically a connector) and the ESD protection device. Refer to Application of  
Positive ESD Pulse between Input Channel and Ground, which illustrates an example of a positive ESD  
pulse striking an input channel. The parasitic series inductance back to the power supply is represented  
by L1 andL2. The voltage VCL on the line being protected is:  
VCL = Fwd voltage drop of D1 + VSUPPLY + L1 x d(IESD ) / dt+ L2 x d(IESD ) / dt  
where IESD is the ESD current pulse, and VSUPPLY is the positive supply voltage.  
An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4  
contact discharge per the IEC61000-4-2 standard results in a current pulse that rises from zero to 30  
Amps in 1ns. Here d(IESD)/dt can be approximated by ΔIESD/Δt, or 30/(1x10-9). So just 10nH of series  
inductance (L1 andL2 combined) will lead to a 300V increment in VCL!  
Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to  
drastically increased negative voltage on the line being protected.  
Another consideration is the output impedance of the power supply for fast transient currents. Most power  
supplies exhibit a much higher output impedance to fast transient current spikes. In the VCL equation  
above, the VSUPPLY term, in reality, is given by (VDC + IESD x ROUT), where VDC and ROUT are the nominal supply  
DC output voltage and effective output impedance of the power supply respectively. As an example, a  
ROUT of 1 ohm would result in a 10V increment in VCL for a peak IESD of 10A.  
If the inductances and resistance described above are close to zero, the rail-clamp ESD protection diodes  
will do a good job of protection. However, since this is not possible in practical situations, a bypass  
capacitor must be used to absorb the very high frequency ESD energy. So for any brand of rail-clamp  
ESD protection diodes, a bypass capacitor should be connected between the VP pin of the diodes and the  
ground plane (VN pin of the diodes) as shown in the Application Circuit diagram below. A value of 0.22µF  
is adequate for IEC-61000-4-2 level 4 contact discharge protection (+8kV). Ceramic chip capacitors  
mounted with short printed circuit board traces are good choices for this application. Electrolytic  
capacitors should be avoided as they have poor high frequency characteristics. For extra protection,  
connect a zener diode in parallel with the bypass capacitor to mitigate the effects of the parasitic series  
inductance inherent in the capacitor. The breakdown voltage of the zener diode should be slightly higher  
than the maximum supply voltage.  
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of  
expected electrostatic discharges. The power supply bypass capacitor mentioned above should be as  
close to the VP pin of the Protection Array as possible, with minimum PCB trace lengths to the power  
supply, ground planes and between the signal input and the ESD device to minimize stray series  
inductance.  
Additional Information  
See also California Micro Devices Application Notes AP209, “Design Considerations for ESD Protection”  
and AP219, "ESD Protection for USB 2.0 Systems"  
Rev. 3 | Page 6 of 9 | www.onsemi.com  
PACDN004  
Figure 1. Application of Positive ESD Pulse between Input Channel and Ground  
Rev. 3 | Page 7 of 9 | www.onsemi.com  
PACDN004  
Mechanical Details  
SOT-143 Mechanical Specifications  
PACDN004 devices are packaged in 4-pin SOT-143 packages. Dimensions are presented below.  
For complete information on the SOT-143 package, see the California Micro Devices SOT-143 Package  
Information document.  
PACKAGE DIMENSIONS  
SOT-143  
4
Package  
Pins  
Millimeters  
Min Max  
Inches  
Dimensions  
Min  
Max  
0.80  
0.05  
0.30  
0.76  
0.08  
2.80  
2.10  
1.20  
1.22  
0.15  
0.50  
0.89  
0.20  
3.04  
2.64  
1.40  
0.031  
0.002  
0.012  
0.030  
0.003  
0.110  
0.082  
0.047  
0.048  
A
A1  
b
0.006  
0.019  
0.035  
0.008  
0.119  
0.103  
0.055  
b2  
c
D
E
E1  
e
1.92 BSC  
0.20 BSC  
0.4 0.6  
0.54 REF  
0.075 BSC  
0.008 BSC  
0.016 0.024  
0.021 REF  
3000 pieces  
e1  
L
Package Dimensions for SOT-143.  
L1  
# per tape  
and reel  
Controlling dimension: millimeters  
Rev. 3 | Page 8 of 9 | www.onsemi.com  
PACDN004  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any  
products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising  
out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical”  
parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating  
parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the  
rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to  
support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or  
use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such  
unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action  
Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800-282-9855  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Toll Free USA/Canada  
Europe, Middle East and Africa Technical  
Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81-3-5773-3850  
For additional information, please contact your local  
Sales Representative  
Rev. 3 | Page 9 of 9 | www.onsemi.com  

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