NXH600N65L4Q2F2SG [ONSEMI]
Power Integrated Module (PIM), I-Type NPC 650 V, 600 A IGBT, 650 V, 300 A Diode;
| 型号： | NXH600N65L4Q2F2SG |
| 厂家： | 
ONSEMI |
| 描述： | Power Integrated Module (PIM), I-Type NPC 650 V, 600 A IGBT, 650 V, 300 A Diode PC 双极性晶体管 |
| 文件： | 总21页 (文件大小：2774K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
3-Level NPC Inverter
Module
NXH600N65L4Q2F2
The NXH600N65L4Q2F2SG/PG is a power module containing a
I−type neutral point clamped three−level inverter. The integrated field
stop trench IGBTs and FRDs provide lower conduction losses and
switching losses, enabling designers to achieve high efficiency and
superior reliability.
PIM41, 93x47 (SOLDER PIN)
CASE 180BC
Features
• Neutral Point Clamped Three−level Inverter Module
• 650 V Field Stop 4 IGBTs
• Low Inductive layout
• Solderable Pins/Press−fit Pins
• Thermistor
• Pb−Free, Halogen Free/BFR Free and RoHS Compliant
PIM41, 93x47 (PRESS FIT)
CASE 180HD
Typical Applications
MARKING DIAGRAM
• Solar Inverters
• Uninterruptable Power Supplies Systems
• Energy Storage System
XXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
PIN CONNECTIONS
16
15
14
17 18 19
20
21 22 23 24
25
41
40
12
26
27
13
28
10
11
5
29 30
31
4
3
2
1
6
7
8
9
32 33 34
35
36 37
38 39
Figure 1. NXH600N65L4Q2F2 Schematic Diagram
ORDERING INFORMATION
See detailed ordering and shipping information on page 16 of
this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
November, 2022 − Rev. 3
NXH600N65L4Q2F2/D
NXH600N65L4Q2F2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
OUTER IGBT (T1, T4)
Collector−Emitter Voltage
Gate−Emitter Voltage
V
650
V
V
CES
V
20
30
GE
Positive Transient Gate*Emitter Voltage (tpulse = 5 s, D < 0.10)
Continuous Collector Current @ T = 80 °C (T = 175°C)
I
C
483
1449
931
A
A
c
J
Pulsed Collector Current (T = 175°C)
I
Cpulse
J
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
INNER IGBT (T2, T3)
T
JMIN
−40
175
T
JMAX
Collector−Emitter Voltage
V
650
V
V
CES
Gate−Emitter Voltage
V
20
30
GE
Positive Transient Gate*Emitter Voltage (tpulse = 5 s, D < 0.10)
Continuous Collector Current @ T = 80 °C (T = 175°C)
I
C
314
942
679
−40
175
A
A
c
J
Pulsed Collector Current (T = 175°C)
I
J
Cpulse
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE (D5, D6)
Peak Repetitive Reverse Voltage
T
JMIN
T
JMAX
V
RRM
650
201
603
477
−40
175
V
A
Continuous Forward Current @ T = 80 °C (T = 175°C)
I
F
c
J
Repetitive Peak Forward Current (T = 175°C)
I
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
INVERSE DIODES (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
T
JMIN
T
JMAX
V
RRM
650
129
387
298
−40
175
V
A
Continuous Forward Current @ T = 80 °C (T = 175°C)
I
F
c
J
Repetitive Peak Forward Current (Tp = 1 ms)
I
A
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMIN
T
JMAX
Storage Temperature Range
T
stg
−40 to 150
°C
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50Hz
Creepage Distance
V
is
4000
12.7
V
RMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Module Operating Junction Temperature
T
J
−40
175
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH600N65L4Q2F2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
OUTER IGBT (T1, T4)
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−Emitter Cutoff Current
V
= 0 V, V = 650 V
I
CES
–
–
–
3.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
2.2
–
mA
GE
GE
GE
GE
GE
CE
Collector−Emitter Saturation Voltage
V
V
V
V
= 15 V, I = 600 A, T = 25°C
V
V
1.61
V
C
J
CE(sat)
= 15 V, I = 600 A , T = 175°C
1.90
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
= V , I = 2 mA
3.94
5.2
15
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
–
mA
ns
CE
GES
T = 25°C
t
153.91
45.54
721.80
10.25
3.04
J
d(on)
V
V
= 350 V, I = 200 A
C
CE
GE
R
Rise Time
t
r
–
= −9 V to +15 V, R
Goff
= 15 W,
Gon
= 23 W
Turn−off Delay Time
t
–
d(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
on
E
off
–
mJ
ns
6.58
–
T = 125°C
t
139.84
49.03
778.28
31.00
4.43
–
J
d(on)
V
V
= 350 V, I = 200 A
CE
GE
R
C
Rise Time
t
r
–
= −9 V to +15 V, R
Goff
= 15 W,
Gon
= 23 W
Turn−off Delay Time
t
–
d(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
mJ
pF
8.18
–
V
V
=20 V. V = 0 V. f = 10 kHz
C
37100
1010
172
–
CE
GE
ies
oes
Output Capacitance
C
–
Reverse Transfer Capacitance
Total Gate Charge
C
res
–
= 600 V, I = 40 A, V
=
15 V
Q
g
2180
0.176
0.102
–
nC
CE
C
GE
Thermal Resistance − Chip−to−heatsink
Thermal Resistance − Chip−to−case
NEUTRAL POINT DIODE (D5, D6)
Diode Forward Voltage
Thermal grease, Thickness = 2 Mil 2%,
l = 2.87 W/mK
R
–
°C/W
°C/W
thJH
thJC
R
–
I = 250 A, T = 25°C
F
V
F
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.47
1.91
3.1
–
V
J
I = 250 A, T = 175°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
19
–
ns
nC
J
V
V
= 350 V, I = 200 A
C
CE
GE
Reverse Recovery Charge
Q
rr
480
–
= −9 V to +15 V, R = 15 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
32.5
–
A
RRM
di/dt
3571.45
110.56
55.62
3801.07
108.38
3387.11
722.83
0.279
0.199
–
A/μs
mJ
E
rr
–
Reverse Recovery Time
T = 125°C
t
rr
–
ns
J
V
V
= 350 V, I = 200 A
C
CE
GE
Reverse Recovery Charge
Q
rr
–
nC
= −9 V to +15 V, R = 15 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
A
RRM
di/dt
–
A/ms
mJ
E
rr
–
Thermal Resistance − Chip−to−heatsink
Thermal Resistance − Chip−to−case
INNER IGBT (T2,T3)
Thermal grease, Thickness = 2 Mil 2%,
l = 2.87 W/mK
R
–
°C/W
°C/W
thJH
thJC
R
–
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
GE
V
GE
V
GE
V
GE
V
GE
= 0 V, V = 650 V
I
–
–
–
100
2.2
–
mA
CE
CES
= 15 V, I = 450 A, T = 25°C
V
V
1.59
1.75
4.02
–
V
C
J
CE(sat)
= 15 V, I =450 A , T = 175°C
–
C
J
Gate−Emitter Threshold Voltage
= V , I = 1.5 mA
3.1
–
5.2
15
V
CE
C
GE(TH)
Gate Leakage Current
= 20 V, V = 0 V
I
mA
CE
GES
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NXH600N65L4Q2F2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
INNER IGBT (T2,T3)
Test Conditions
Symbol
Min
Typ
Max
Unit
Turn−on Delay Time
T = 25°C
t
t
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
211.52
63.62
922.97
26
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
J
V
V
d(on)
= 350 V, I = 200 A
CE
GE
C
Rise Time
t
r
= −9 V to +15 V, R
= 15 W,
Gon
R
Goff
= 21 W
Turn−off Delay Time
d(off)
Fall Time
t
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
E
4.06
mJ
ns
on
off
5.57
T = 125°C
t
187.15
72.07
991.52
24.12
4.84
J
d(on)
V
V
= 350 V, I = 200 A
CE
GE
R
C
Rise Time
t
r
= −9 V to +15 V, R
= 15 W,
Gon
= 21 W
Goff
Turn−off Delay Time
t
d(off)
Fall Time
t
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
E
mJ
pF
on
off
6.37
V
V
= 20 V, V = 0 V, f = 10 kHz
C
27600
814
CE
GE
ies
oes
Output Capacitance
C
Reverse Transfer Capacitance
Total Gate Charge
C
131
res
= 480 V, I = 375 A, V
=
15 V
Q
g
1580
0.224
0.140
nC
CE
C
GE
Thermal Resistance − Chip−to−heatsink
Thermal Resistance − Chip−to−case
INVERSE DIODES (D1, D2, D3, D4)
Diode Forward Voltage
Thermal grease, Thickness = 2 Mil 2%,
l = 2.87 W/mK
R
R
°C/W
°C/W
thJH
thJC
I = 150 A, T = 25°C
F
V
F
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.45
1.75
3.1
–
V
J
I = 150 A, T = 175°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
16.55
–
ns
nC
J
V
V
= 350 V, IC = 200 A
= −9 V to +15 V, R = 15 W
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Q
rr
178.92
16.33
–
G
I
–
A
RRM
di/dt
2682.93
33.93
–
A/ms
uJ
E
rr
–
T = 125°C
t
rr
54.93
–
ns
J
V
V
= 350 V, I = 200 A
C
= −9 V to +15 V, R = 15 W
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Thermal Resistance − Chip−to−heatsink
Thermal Resistance − Chip−to−case
THERMISTOR CHARACTERISTICS
Nominal Resistance
Q
rr
2113.76
64.50
–
nC
G
I
–
A
RRM
di/dt
2445.66
459.95
0.420
–
A/ms
mJ
E
rr
–
Thermal grease, Thickness = 2 Mil 2%,
l = 2.87 W/mK
R
–
°C/W
°C/W
thJH
thJC
R
0.319
–
T = 25°C
R
−
−
5
492.2
−
−
−
1
−
−
−
kW
W
25
Nominal Resistance
T = 100°C
R
100
Deviation of R25
DR/R
−1
−
%
Power Dissipation
P
D
5
mW
mW/K
K
Power Dissipation Constant
B−value
−
1.3
3435
B (25/85), tolerance 1%
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − IGBT T1, T4 AND DIODE D5, D6
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 4. Typical Transfer Characteristics
Figure 5. Diode Forward Characteristics
Figure 6. Transient Thermal Impedance (T1,T4)
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − IGBT T1, T4 AND DIODE D5, D6 (continued)
Figure 7. Transient Thermal Impedance (D5, D6)
Figure 8. FBSOA (T1, T4)
Figure 9. RBSOA (T1, T4)
Figure 10. Gate Voltage vs. Gate Charge
Figure 11. Capacitance
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − IGBT T2, T3 AND DIODE D1, D2, D3, D4
Figure 12. Typical Output Characteristics
Figure 13. Typical Output Characteristics
Figure 14. Typical Transfer Characteristics
Figure 15. Diode Forward Characteristics
Figure 16. Transient Thermal Impedance (T2, T3)
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − IGBT T2, T3 AND DIODE D1, D2, D3, D4 (continued)
Figure 17. Transient Thermal Impedance (D1, D2, D3, D4)
Figure 18. FBSOA (T2, T3)
Figure 19. RBSOA (T2, T3)
Figure 20. Gate Voltage vs. Gate Charge
Figure 21. Capacitance
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − IGBT T2, T3 AND DIODE D1, D2, D3, D4 (continued)
Figure 22. NTC vs. Temperature Curve
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − T1/T4 IGBT COMUTATES D5/D6 DIODE
Figure 23. Typical Switching Loss Eon vs. IC
Figure 24. Typical Switching Eoff vs. IC
Figure 25. Typical Switching Eon vs. RG
Figure 26. Typical Switching Eoff vs. RG
Figure 27. Typical Switching Time vs. IC
Figure 28. Typical Switching Time vs. IC
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − T1/T4 IGBT COMUTATES D5/D6 DIODE (continued)
Figure 29. Typical Switching Time vs. RG
Figure 30. Typical Switching Time vs. RG
Figure 31. Typical Reverse Recovery Energy vs. IC
Figure 32. Typical Reverse Recovery Energy vs. Rg
Figure 33. Typical Reverse Recovery Time vs. IC
Figure 34. Typical Reverse Recovery Charge vs. IC
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − T1/T4 IGBT COMUTATES D5/D6 DIODE (continued)
Figure 35. Typical Reverse Recovery Current vs. IC
Figure 36. Typical di/dt vs. IC
Figure 37. Typical Reverse Recovery Time vs. Rg
Figure 38. Typical Reverse Recovery Charge vs. Rg
Figure 39. Typical Reverse Recovery Current vs. Rg
Figure 40. Typical di/dt vs. RG
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − T2/T3 IGBT COMUTATES D1/D4 DIODE
Figure 41. Typical Switching Loss Eon vs. IC
Figure 42. Typical Switching Loss Eoff vs. IC
Figure 43. Typical Switching Loss Eon vs. Rg
Figure 44. Typical Switching Loss Eoff vs. Rg
Figure 45. Typical Turn−Off Switching Time vs. IC
Figure 46. Typical Turn−On Switching Time vs. IC
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − T2/T3 IGBT COMUTATES D1/D4 DIODE (continued)
Figure 47. Typical Turn−Off Switching Time vs. Rg
Figure 48. Typical Turn−On Switching Time vs.Rg
Figure 49. Typical Reverse Recovery Energy Loss
vs. IC
Figure 50. Typical Reverse Recovery Energy
Loss vs. Rg
Figure 51. Typical Reverse Recovery Time vs. IC
Figure 52. Typical Reverse Recovery Charge vs. IC
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NXH600N65L4Q2F2
TYPICAL CHARACTERISTICS − T2/T3 IGBT COMUTATES D1/D4 DIODE (continued)
Figure 53. Typical Reverse Recovery Current vs. IC
Figure 54. Typical di/dt Current Slope vs. IC
Figure 55. Typical Reverse Recovery Time vs. Rg
Figure 56. Typical Reverse Recovery Charge vs. Rg
Figure 57. Typical Reverse Recovery Peak Current
vs. Rg
Figure 58. Typical di/dt vs. RG
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NXH600N65L4Q2F2
ORDERING INFORMATION
Device Order Number
Marking
Package
Shipping
NXH600N65L4Q2F2SG
NXH600N65L4Q2F2SG
Q2PACK
(Pb*Free and Halide*Free)
12 Units / Blister Tray
NXH600N65L4Q2F2PG
NXH600N65L4Q2F2PG
Q2PACK
(Pb*Free and Halide*Free)
12 Units / Blister Tray
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM41, 93x47 (SOLDER PIN)
CASE 180BC
ISSUE O
DATE 27 SEP 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON38148H
PIM41, 93x47 (SOLDER PIN)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM41, 93x47 (SOLDER PIN)
CASE 180BC
ISSUE O
DATE 27 SEP 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
*This information is generic. Please refer to device data
XXXXX = Specific Device Code
= Assembly & Test Site Code
YYWW = Year and Work Week Code
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
AT
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON38148H
PIM41, 93x47 (SOLDER PIN)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
2
© Semiconductor Components Industries, LLC, 2021
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM41, 93x47 (PRESS FIT)
CASE 180HD
ISSUE O
DATE 22 SEP 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON38009H
PIM41, 93x47 (PRESS FIT)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM41, 93x47 (PRESS FIT)
CASE 180HD
ISSUE O
DATE 22 SEP 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
*This information is generic. Please refer to device data
XXXXX = Specific Device Code
= Assembly & Test Site Code
YYWW = Year and Work Week Code
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
AT
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON38009H
PIM41, 93x47 (PRESS FIT)
PAGE 2 OF 2
onsemi and
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