NXH80B120MNQ0SNG_技术文档

DATA SHEET

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Silicon Carbide (SiC)

Module – EliteSiC, 80 mohm

SiC M1 MOSFET, 1200 V +

20 A, 1200 V SiC Diode,

Two Channel Full SiC Boost,

Q0 Package

Q0BOOST

CASE 180AJ

SOLDER PINS

Product Preview

MARKING DIAGRAM

NXH80B120MNQ0SNG

ATYYWW

The NXH80B120MNQ0SNG is a power module containing a dual

boost stage. The integrated SiC MOSFETs and SiC Diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

G

AT

= Pb−Free Package

= Assembly & Test Site Code

YYWW = Year and Work Week Code

Features

• 1200 V 80 mW SiC MOSFETs

• Low Reverse Recovery and Fast Switching SiC Diodes

• 1600 V Bypass and Anti−parallel Diodes

• Low Inductive Layout

PIN CONNECTIONS

• Solderable Pins

• Thermistor

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Solar Inverters

• Uninterruptable Power Supplies

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

Figure 1. NXH80B120MNQ0SNG Schematic Diagram

This document contains information on a product under development. onsemi reserves

the right to change or discontinue this product without notice.

1

Publication Order Number:

February, 2023 − Rev. P2

NXH80B120MNQ0/D

NXH80B120MNQ0SNG

ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted

J

Rating

Symbol

Value

Unit

BOOST MOSFET

Drain−Source Voltage

Gate−Source Voltage

V

1200

−15/+25

23

V

DS

GS

Continuous Drain Current (@ V = 20 V, T = 80°C)

I

D

A

GS

C

Pulsed Drain Current @ T = 80°C (T = 175_C)

I

D(Pulse)

69

A

C

J

Maximum Power Dissipation @ T = 80°C

P

tot

69

W

°C

C

Minimum Operating Junction Temperature

Maximum Operating Junction Temperature

BOOST DIODE

T

JMIN

−40

T

JMAX

175

Peak Repetitive Reverse Voltage

V

1200

31

V

A

RRM

Continuous Forward Current @ T = 80°C

I

F

C

Surge Forward Current (60 Hz single half−sine wave)

I

93

A

FSM

Maximum Power Dissipation @ T = 80°C (T = 175_C)

P

tot

97

W

C

J

2

I t − value (60 Hz single half−sine wave)

Minimum Operating Junction Temperature

Maximum Operating Junction Temperature

BYPASS DIODE

I t

19

A s

T

JMIN

−40

175

°C

T

JMAX

Peak Repetitive Reverse Voltage

V

1600

44

V

A

RRM

Continuous Forward Current @ T = 80°C (T = 150°C)

I

F

C

J

Repetitive Peak Forward Current (T = 80°C, t limited by T

)

I

FRM

132

63

A

C

p

Jmax

Power Dissipation Per Diode @ T = 80°C (T = 150°C)

P

tot

W

°C

C

J

Minimum Operating Junction Temperature

T

JMIN

−40

150

Maximum Operating Junction Temperature

THERMAL PROPERTIES

T

JMAX

Storage Temperature range

T

stg

−40 to 125

°C

INSULATION PROPERTIES

Isolation test voltage, t = 1 sec, 60 Hz

Creepage distance

V

is

3000

12.7

V

RMS

mm

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

RECOMMENDED OPERATING RANGES

Parameter

Symbol

Min

Max

– 25)

JMAX

Unit

Module Operating Junction Temperature

T

J

−40

(T

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

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2

NXH80B120MNQ0SNG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

J

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

BOOST MOSFET CHARACTERISTICS

Zero Gate Voltage Drain Current

V

= 0 V, V = 1200 V, T = 25°C

–

80

114

2.0

–

100

110

162

4.3

1

I

mA

GS

DS

J

DSS

Static Drain−to−Source On

Resistance

= 20 V, I = 20 A, T = 25°C

D J

R

DS(on)

mW

= 20 V, I = 20 A, T = 150°C

–

D

J

Gate−Source Threshold Voltage

Gate−Source Leakage Current

= V , I = 5 mA

1.8

–

V

GS(th)

DS

D

= 25 V, V = 0 V

I

mA

ns

DS

GSS

T = 25°C

Turn−on Delay Time

Rise Time

–

13.4

3.6

–

t

J

d(on)

V

D

= 700 V, V = 20 V, −5 V

DS

GS

t

r

I

= 30 A, R = 4.7 W

G

Turn−off Delay Time

Fall Time

27.6

10.3

166

t

d(off)

t

f

Turn−on Switching Loss per Pulse

mJ

E

on

off

Turn−off Switching Loss per Pulse

–

49.2

–

T = 125°C

Turn−on Delay Time

Rise Time

–

13.7

3.5

–

ns

t

J

d(on)

V

D

= 700 V, V = 20 V, −5 V

DS

GS

t

r

I

= 30 A, R = 4.7 W

G

Turn−off Delay Time

Fall Time

29.56

10.36

154

t

d(off)

t

f

Turn−on Switching Loss per Pulse

mJ

E

on

E

off

Turn−off Switching Loss per Pulse

Input Capacitance

–

46.65

1038.7

95.5

–

V

DS

= 800 V, V = 0 V, f = 1 MHz

pF

C

GS

iss

oss

Output Capacitance

C

Reverse Transfer Capacitance

Total Gate Charge

10.9

C

rss

V

DS

V

GS

= 600 V, I = 20 A,

= 20 V, −5 V

Q

g

74.72

nC

D

Thermal grease,

Thermal Resistance − chip−to−case

–

1.37

1.94

–

K/W

R

thJC

thJH

Thickness = 2.1 Mil 2%

Thermal Resistance − chip−to−

heatsink

l = 2.9 W/mK

BOOST DIODE CHARACTERISTICS

Diode Reverse Leakage Current

Diode Forward Voltage

V

= 1200 V

I

–

300

mA

R

I = 20 A, T = 25°C

F

V

–

1.49

2.17

12

1.7

–

V

J

F

I = 20 A, T = 150°C

F

J

T = 25°C

Reverse Recovery Time

–

ns

nC

A

t

J

rr

V

DS

= 700 V, V = 20 V, −5 V

= 30 A, R = 4.7 W

G

GS

Reverse Recovery Charge

Peak Reverse Recovery Current

–

159

21.2

7240

–

Q

rr

RRM

I

D

I

Peak Rate of Fall of Recovery

Current

di/dt

A/ms

Reverse Recovery Energy

Reverse Recovery Time

–

70

–

E

t

mJ

ns

rr

T = 125°C

11.7

153

J

rr

V

DS

= 700 V, V = 20 V, −5 V

GS

Reverse Recovery Charge

Peak Reverse Recovery Current

nC

A

Q

rr

RRM

I

D

= 30 A, R = 4.7 W

G

23.8

8068

I

Peak Rate of Fall of Recovery

Current

di/dt

A/ms

Reverse Recovery Energy

–

66.3

–

E

mJ

rr

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3

NXH80B120MNQ0SNG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)

J

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

BOOST DIODE CHARACTERISTICS

Thermal grease,

Thermal Resistance − chip−to−case

–

0.98

1.33

–

K/W

R

thJC

thJH

Thickness = 2.1 Mil 2%

Thermal Resistance −

chip−to−heatsink

l = 2.9 W/mK

BYPASS DIODE CHARACTERISTICS

Diode Reverse Leakage Current

Diode Forward Voltage

V

= 1600 V, T = 25°C

I

–

100

1.4

–

mA

R

J

R

I = 30 A, T = 25°C

F

V

F

1.04

0.94

V

J

I = 30 A, T = 150°C

F

J

Thermal grease,

Thermal Resistance − chip−to−case

–

1.12

1.56

–

K/W

R

thJC

thJH

Thickness = 2.1 Mil 2%

Thermal Resistance −

chip−to−heatsink

R

l = 2.9 W/mK

T = 100°C

THERMISTOR CHARACTERISTICS

Nominal resistance

R

–

22

–

kW

25

Nominal resistance

Deviation of R25

Power dissipation

Power dissipation constant

B−value

–

−5

–

1486

–

5

–

R

W

%

100

DR/R

P

200

2

mW

mW/K

K

D

–

B(25/50), tolerance 3%

B(25/100), tolerance 3%

–

3950

3998

B−value

–

K

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Part Number

Marking

Package

Shipping

Q0BOOST − Case 180AJ

(Pb−Free and Halide−Free Solder Pins)

NXH80B120MNQ0SNG

24 Units / Blister Tray

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4

NXH80B120MNQ0SNG

TYPICAL CHARACTERISTICS – MOSFET, BOOST DIODE AND BYPASS DIODE

Figure 2. MOSFET On Region Characteristics

Figure 3. MOSFET On Region Characteristics

Figure 4. MOSFET Transfer Characteristics

Figure 5. Boost Diode Forward Characteristics

Figure 6. Bypass Diode Forward Characteristics

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5

NXH80B120MNQ0SNG

TYPICAL SWITCHING CHARACTERISTICS – MOSFET

Figure 7. Typical Turn On Loss vs. I_D

Figure 8. Typical Turn Off Loss vs. I_D

Figure 9. Typical Turn On Loss vs. R_G

Figure 10. Typical Turn Off Loss vs. R_G

Figure 11. Typical Turn On Switching Time vs. I_D

Figure 12. Typical Turn Off Switching Time vs. I_D

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6

NXH80B120MNQ0SNG

TYPICAL CHARACTERISTICS – MOSFET

Figure 13. Typical Turn On Switching Time vs. R_G

Figure 14. Typical Turn Off Switching Time vs. R_G

TYPICAL CHARACTERISTICS – BOOST DIODE

Figure 15. Typical Reverse Recovery Energy Loss

Figure 16. Typical Reverse Recovery Energy Loss

vs. R_G

vs. I_D

Figure 17. Typical Reverse Recovery Time vs. I_D

Figure 18. Typical Reverse Recovery Time vs. R_G

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7

NXH80B120MNQ0SNG

TYPICAL SWITCHING CHARACTERISTICS – BOOST DIODE

Figure 19. Typical Reverse Recovery Charge vs. I_D

Figure 20. Typical Reverse Recovery

Charge vs. R_G

Figure 21. Typical Reverse Recovery Peak

Current vs. I_D

Figure 22. Typical Reverse Recovery Peak

Current vs. R_G

Figure 23. Typical di/dt vs. I_D

Figure 24. Typical di/dt vs. R_G

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8

NXH80B120MNQ0SNG

TRANSIENT THERMAL IMPEDANCE – MOSFET, BOOST DIODE AND BYPASS DIODE

10

1

0.1

@50% duty cycle

@20% duty cycle

@10% duty cycle

@5% duty cycle

0.01

@2% duty cycle

@1% duty cycle

single pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

pulse on time [s]

Figure 25. MOSFET Transient Thermal Impedance

10

1

@50% duty cycle

@20% duty cycle

@10% duty cycle

@5% duty cycle

@2% duty cycle

@1% duty cycle

0.1

single pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

1

10

pulse on time [s]

Figure 26. Boost Diode Transient Thermal Impedance

10

1

@50% duty cycle

@20% duty cycle

@10% duty cycle

@5% duty cycle

@2% duty cycle

0.1

0.01

@2% duty cycle

@1% duty cycle

single pulse

0.00001

0.0001

0.001

0.01

0.1

1

10

pulse on time [s]

Figure 27. Bypass Diode Transient Thermal Impedance

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9

NXH80B120MNQ0SNG

GATE CHARGE, CAPACITANCE CHARGE, SOA AND THERMISTOR CHARACTERISTICS

Figure 28. Gate Voltage vs. Gate Charge

Figure 29. Capacitance Charge

Figure 30. FBSOA

Figure 31. RBSOA

Figure 32. Thermistor Characteristics

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10

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

PIM22, 55x32.5 / Q0BOOST

CASE 180AJ

ISSUE B

DATE 08 NOV 2017

GENERIC

MARKING DIAGRAM*

XXXXXXXXXXXXXXXXG

ATYYWW

XXXXX = Specific Device Code

G

= Pb−Free Package

AT

= Assembly & Test Site Code

YYWW = Year and Work Week Code

*This information is generic. Please refer to device data

sheet for actual part marking. Pb−Free indicator, “G” or

microdot “G”, may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

MOUNTING FOOTPRINT ON PAGE 2

DOCUMENT NUMBER:

DESCRIPTION:

98AON63481G

PIM22 55X32.5 / Q0BOOST (SOLDER PIN)

PAGE 1 OF 2

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

PIM22, 55x32.5 / Q0BOOST

CASE 180AJ

ISSUE B

DATE 08 NOV 2017

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON63481G

PIM22 55X32.5 / Q0BOOST (SOLDER PIN)

PAGE 2 OF 2

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

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ADDITIONAL INFORMATION

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For additional information, please contact your local Sales Representative at

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


型号：	NXH80B120MNQ0SNG
厂家：	ONSEMI
描述：	Full SiC MOSFET Module \| EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode
文件：	总13页 (文件大小：676K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NXH80B120MNQ0SNG [ONSEMI]

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