NVMJS1D7N06CTWG [ONSEMI]
Power MOSFET 60 V, 1.68 mOhms, 224 A, Single N-Channel;
| 型号： | NVMJS1D7N06CTWG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 60 V, 1.68 mOhms, 224 A, Single N-Channel |
| 文件： | 总6页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel
60 V, 1.68 mW, 224 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
60 V
1.68 mW @ 10 V
224 A
D (5)
NVMJS1D7N06C
Features
• Small Footprint (5x6 mm) for Compact Design
G (4)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (1,2,3)
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING
DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
D
D
D
D
Gate−to−Source Voltage
V
GS
20
V
1D7N06
C
AWLYW
Continuous Drain
Current R
T
= 25°C
I
224
A
C
D
q
JC
T
C
= 100°C
158.4
(Notes 1, 3)
Steady
State
LFPAK8
CASE 760AA
Power Dissipation
T
C
= 25°C
P
168.6
84.3
35.4
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
1
S
S
S
G
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
1D7N06C = Specific Device Code
T = 100°C
A
25
(Notes 1, 2, 3)
Steady
State
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Power Dissipation
T = 25°C
A
P
4.2
2.1
900
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
W
= Work Week
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Source Current (Body Diode)
I
S
140.5
839
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 17 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.89
Unit
Junction−to−Case − Steady State (Note 1)
R
°C/W
q
JC
Junction−to−Ambient − Steady State
R
35.6
q
JA
(Notes 1, 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. 1
NVMJS1D7N06C/D
NVMJS1D7N06C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
23
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V
=
GS
16 V
nA
GSS
DS
Gate Threshold Voltage
V
V
GS
= V , I = 250 mA
2
4
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−7.8
mV/°C
mW
GS(TH)
J
R
V
GS
= 10 V
I = 50 A
D
1.3
1.68
DS(on)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
4870
3505
22
ISS
Output Capacitance
C
V
= 0 V, f = 750 KHz, V = 25 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= 10 V, V = 48 V; I = 50 A
61
G(TOT)
GS
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
13
G(TH)
nC
V
Q
21
GS
GD
GP
V
GS
= 10 V, V = 48 V; I = 50 A
DS D
Q
V
7.8
4.6
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
20
10
42
11
d(ON)
Rise Time
t
r
V
= 10 V, V = 48 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.67
69
1.2
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
37
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
32
b
Reverse Recovery Charge
Q
111
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
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2
NVMJS1D7N06C
TYPICAL CHARACTERISTICS
300
300
250
200
150
100
V
GS
= 10 V to 6.0 V
V
DS
= 10 V
250
200
150
100
5.0 V
T = 25°C
J
4.5 V
4.0 V
50
0
50
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
4
3
T = 25°C
D
T = 25°C
J
J
I
= 50 A
2
1
V
GS
= 10 V
1
0
5
6
7
8
9
10
0
50
100
150
200
250
300
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
V
I
= 10 V
= 50 A
T = 175°C
T = 150°C
J
GS
J
D
T = 125°C
J
T = 100°C
J
T = 85°C
J
T = 25°C
J
1E−09
1E−10
0.8
0.6
5
15
25
35
45
55
−75 −50 −25
0
25 50 75 100 125 150 175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMJS1D7N06C
TYPICAL CHARACTERISTICS
10,000
1000
10
V
= 48 V
DS
C
ISS
T = 25°C
J
8
6
4
I
D
= 50 A
C
OSS
Q
Q
GD
GS
100
C
RSS
10
1
2
0
V
= 0 V
GS
T = 25°C
J
f = 750 KHz
0.1
1
10
60
0
8
16
24
32
40
48
56
64
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
300
100
1000
100
V
GS
= 0 V
10
1
t
d(off)
t
d(on)
t
f
0.1
t
r
10
1
0.01
T = 125°C T = 25°C
T = −55°C
J
J
J
0.001
1
10
R , GATE RESISTANCE (W)
50
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
T
= 25°C
J(initial)
10 ms
10
10
T
C
= 25°C
Single Pulse
≤ 10 V
T
= 150°C
J(initial)
0.5 ms
1 ms
V
GS
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.0001
0.001
t , TIME IN AVALANCHE (s)
AV
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMJS1D7N06C
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
0.001
Single Pulse
0.0001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMJS1D7N06CTWG
1D7N06C
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMJS1D7N06C
PACKAGE DIMENSIONS
LFPAK8 5x6
CASE 760AA
ISSUE C
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