NVMJST1D3N04CTXG [ONSEMI]
Single N-Channel Power MOSFET, 40 V, 1.35 mΩ on Top Cool Package ;型号: | NVMJST1D3N04CTXG |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET, 40 V, 1.35 mΩ on Top Cool Package |
文件: | 总7页 (文件大小:314K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single
N-Channel
40 V, 1.39 mW, 386 A
V
R
MAX
I
MAX
(BR)DSS
DS(ON)
D
40 V
1.39 mW @ 10 V
386 A
D (6,7,8,9,10,TOP)
NVMJST1D3N04C
Features
• Small Footprint (5x7 mm) for Compact Design
G (1)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (2,3,4,5)
• TCPAK57 5x7 Top Cool Package
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
386
273
375
187
900
A
C
D
TCPAK57
CASE 760AG
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
D
R
(Note 1)
q
JC
T
C
= 100°C
MARKING DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
312
739
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 19 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXX
A
Y
= Specific Device Code
= Assembly Location
= Year
THERMAL RESISTANCE MAXIMUM RATINGS
W
= Work Week
ZZ
= Assembly Lot
Parameter
Symbol
Value
0.4
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Heatsink Top (Note 2)
Junction−to−Drain Lead
R
°C/W
q
JC
R
29.2
1.67
5.4
q
JA
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Y
JH
Y
JL
Y
JL
Junction−to−Source Lead
5.3
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. 2s2p JEDEC51−7 standard PCB mounted to a 25x25x3 (mm) aluminum
heatsink with a 12 w/mK TIM interface.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
September, 2022 − Rev. 3
NVMJST1D3N04C/D
NVMJST1D3N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
9.6
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 40 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 170 mA
2.5
3.5
V
mV/°C
mW
S
GS(TH)
GS
DS
D
V
/T
J
−8.6
1.2
GS(TH)
R
V
GS
= 10 V
I = 50 A
D
1.39
DS(on)
g
V
=15 V, I = 50 A
145
FS
DS
D
C
4300
2100
59
pF
nC
ISS
Output Capacitance
C
C
V
= 0 V, f = 1 MHz, V = 25 V
DS
OSS
RSS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= 10 V, V = 20 V; I = 50 A
65
G(TOT)
GS
DS
D
Threshold Gate Charge
Q
13
G(TH)
Gate−to−Source Charge
Gate−to−Drain Charge
Q
20
GS
GD
GP
V
GS
= 10 V, V = 20 V; I = 50 A
DS
D
Q
V
12
Plateau Voltage
4.7
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
15
47
36
9.0
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 20 V,
DS
GS
D
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.82
0.68
63
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
34
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
29
b
Reverse Recovery Charge
Q
92
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMJST1D3N04C
TYPICAL CHARACTERISTICS
300
280
260
240
220
200
180
160
140
120
100
80
300
V
DS
= 10 V
10 V to
6.0 V
250
200
5.2 V
4.8 V
150
100
T = 25°C
J
4.4 V
4.0 V
60
40
20
0
50
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
4
3
2
T = 25°C
D
T = 25°C
J
J
I
= 50 A
V
GS
= 10 V
1
0
1
0
4
5
6
7
8
9
10
10 30
50
70
90 110 130 150 170 190
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 50 A
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
−50 −25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMJST1D3N04C
TYPICAL CHARACTERISTICS
10000
1000
100
10
Q
C
T
ISS
9
8
7
C
OSS
6
Q
Q
GD
GS
5
4
3
2
1
0
C
RSS
V = 20 V
DS
V
= 0 V
GS
I
D
= 50 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
1000
100
10
V
GS
= 0 V
t
r
10
t
d(off)
t
d(on)
V
V
I
= 10 V
= 20 V
= 50 A
GS
t
f
T = 150°C
J
DD
T = −55°C
J
T = 125°C
T = 25°C
J
D
J
1.0
1.0
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T = 25°C
J
10 ms
10
T = 100°C
J
T
V
= 25°C
≤ 10 V
0.5 ms
1 ms
10 ms
C
GS
Single Pulse
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
1E−4
0.1
1E−3
10E−2
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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NVMJST1D3N04C
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMJST1D3N04CTXG
1D34C
TCPAK57 Top Cool
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMJST1D3N04C
PACKAGE DIMENSIONS
LFPAK10 7.5x5
CASE 760AG
ISSUE C
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6
NVMJST1D3N04C
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