NVMFS014P04M8LT1G [ONSEMI]
Power MOSFET, Single P-Channel, -40 V, 13.8 mΩ @ -10V, -52.1 A;
| 型号： | NVMFS014P04M8LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single P-Channel, -40 V, 13.8 mΩ @ -10V, -52.1 A |
| 文件： | 总7页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power, Single
P-Channel
-40 V, 13.8 mW, -52.1 A
NVMFS014P04M8L
Features
• Small Footprint for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• NVMFWS014P04M8L − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
13.8 mW @ −10 V
19.7 mW @ −4.5 V
−40 V
−52.1 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−40
20
Unit
V
P−Channel MOSFET
D (5−8)
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
−52.1
−36.9
60
A
C
D
q
JC
T
C
(Notes 1, 2, 4)
Steady
State
G (4)
Power Dissipation
T
C
P
W
A
D
R
(Notes 1, 2)
q
JC
T
C
= 100°C
30
S (1,2,3)
Continuous Drain
Current R
T = 25°C
A
I
D
−12.5
−8.8
3.6
q
JA
T = 100°C
A
MARKING
DIAGRAM
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
D
R
(Notes 1, 3)
q
JA
T = 100°C
A
1.8
1
S
S
S
G
D
D
DFN5
XXXXXX
AYWZZ
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−268
A
A
p
(SO−8FL)
CASE 488AA
STYLE 1
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
D
Source Current (Body Diode)
I
−50
A
S
XXXXXX = Specific Device Code
Single Pulse Drain−to−Source Avalanche
E
AS
133
mJ
A
= Assembly Location
= Year
Energy (I
= −6.1 A)
L(pk)
Y
W
ZZ
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Notes 1, 2, 4)
R
2.5
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 3)
R
41.5
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2021 − Rev. 1
NVMFS014P04M8L/D
NVMFS014P04M8L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
21
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
mA
DSS
J
V
DS
= 0 V,
GS
V
= −40 V
T = 125°C
J
−1000
"100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
nA
GSS
DS
GS
V
V
= V , I = −420 mA
−1.0
−2.4
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
5.1
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= −10 V, I = −15 A
10
14.6
42
13.8
19.7
mW
S
DS(on)
GS
D
V
GS
= −4.5 V, I = −7.5 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
DS
= −1.5 V, I = −15 A
D
C
1734
682
32
pF
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
DS
= −20 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
= −4.5V
= −10V
12.5
26.5
2.6
nC
nC
G(TOT)
GS
V
I
= −20 V,
= −20 A
DS
D
V
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
5.6
GS
GD
GP
V
GS
= −10 V, V = −20 V,
DS
I
D
= −30 A
Q
V
3.8
3.2
V
SWITCHING CHARACTERISTICS, V = −4.5 V (Note 6)
GS
Turn−On Delay Time
Rise Time
t
11.5
97.4
44.5
38.2
ns
d(on)
t
r
V
= −4.5 V, V = −20 V,
DS
GS
D
I
= −30 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
−0.86
−0.74
34.9
15.8
19.1
16.3
−1.25
V
SD
GS
J
I
= −15 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= −10 A
Discharge Time
b
Reverse Recovery Charge
Q
52
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS014P04M8L
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
120
VGS = 5.5 V to 10 V
V
DS
= −3 V
VGS = 4.8 V
VGS = 4.5 V
VGS = 4.0 V
100
80
60
40
20
0
VGS = 3.6 V
VGS = 3.2 V
VGS = 2.8 V
T = −55°C
J
T = 25°C
.
J
T = 125°C
J
VGS = 2.6 V
VGS = 2.4 V
0
1
2
3
4
5
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
32
28
24
20
16
12
8
40
30
20
10
0
T = 25°C
D
J
I
= −15 A
V
= −4.5 V
GS
V
GS
= −10 V
4
2
3
4
5
6
7
8
9
10
1
11
21
31
41
51
61
71
81
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2
1,E−04
V
D
= −10 V
GS
T = 25°C
J
I
= −15 A
T = 85°C
1,E−05
1,E−06
1,E−07
1,E−08
J
T = 125°C
J
T = 150°C
J
T = 175°C
J
1.5
1
0.5
0
1,E−09
1,E−10
0
5
10
15
20
25
30
35
40
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS014P04M8L
TYPICAL CHARACTERISTICS (continued)
10
1,E+04
1,E+03
1,E+02
V
I
= −20 V
9
8
7
6
5
4
3
2
V
J
= −0 V
DS
D
GS
= −30 A
T = 25°C
C
f = 1 MHz
ISS
T = 25°C
J
C
OSS
Q
GD
Q
GS
C
RSS
C
ISS
C
OSS
1
C
RSS
1,E+01
0
0
5
10
15
20
25
30
0,1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
50
40
30
20
10
0
1000
100
10
V
= 0 V
GS
V
V
D
= −4.5 V
= −20 V
GS
DS
T = −55°C
J
I
= −30 A
T = 25°C
J
T = 125°C
J
td(on)
tr
td(off)
tf
1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1
1.2
G
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10
1
V
≤ 10 V
GS
SINGLE PULSE
= 25°C
T
C
T (initial) = 25°C
J
10 ms
0.5 ms
1 ms
10 ms
T (initial) = 100°C
J
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
100
1000
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Dafe operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMFS014P04M8L
TYPICAL CHARACTERISTICS (continued)
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS014P04M8LT1G
014P04
DFN5
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFWS014P04M8LT1G
014P4W
DFN5
(Pb−Free, Wettable Flank)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVMFS014P04M8L
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
STYLE 1:
SOLDERING FOOTPRINT*
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
2X
0.495
SIDE VIEW
DETAIL A
4.560
2X
5. DRAIN
1.530
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.475
L
3.200
1.330
1
4
4.530
K
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
1
L1
0.965
4X
D2
BOTTOM VIEW
1.000
G
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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